Overview
The MMBT2222LT1G is a general-purpose NPN silicon transistor manufactured by onsemi. This device is part of the MMBT2222 series, which includes the MMBT2222L, MMBT2222AL, and SMMBT2222AL models. The MMBT2222LT1G is designed to be Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of applications, including automotive and industrial uses. It is also AEC-Q101 qualified and PPAP capable, ensuring high reliability and performance.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 30 | Vdc |
| Collector-Base Voltage | VCBO | 60 | Vdc |
| Emitter-Base Voltage | VEBO | 5.0 | Vdc |
| Collector Current - Continuous | IC | 600 | mAdc |
| Collector Current - Peak | ICM | 1100 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | −55 to +150 | °C |
| DC Current Gain (IC = 10 mAdc, VCE = 10 Vdc) | hFE | 35 - 100 | |
| Collector-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) | VCE(sat) | 0.4 - 1.6 | Vdc |
| Base-Emitter Saturation Voltage (IC = 150 mAdc, IB = 15 mAdc) | VBE(sat) | 0.6 - 2.6 | Vdc |
Key Features
- Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
- AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other critical applications.
- High collector-emitter voltage (VCEO) of up to 30 Vdc and collector-base voltage (VCBO) of up to 60 Vdc.
- Continuous collector current (IC) of 600 mAdc and peak collector current (ICM) of 1100 mAdc.
- Low thermal resistance, junction-to-ambient (RJA) of 556 °C/W on an FR-5 board.
- Wide junction and storage temperature range from −55°C to +150°C.
- High DC current gain (hFE) ranging from 35 to 100 at IC = 10 mAdc and VCE = 10 Vdc.
- Low collector-emitter and base-emitter saturation voltages.
Applications
- General-purpose switching and amplification in electronic circuits.
- Automotive systems, including power management and control circuits.
- Industrial control systems and automation.
- Consumer electronics, such as audio and video equipment.
- Medical devices requiring high reliability and performance.
Q & A
- What is the maximum collector-emitter voltage (VCEO) of the MMBT2222LT1G?
The maximum collector-emitter voltage (VCEO) is 30 Vdc.
- Is the MMBT2222LT1G RoHS compliant?
Yes, the MMBT2222LT1G is Pb-free, halogen-free, and RoHS compliant.
- What is the continuous collector current (IC) rating of the MMBT2222LT1G?
The continuous collector current (IC) is 600 mAdc.
- What is the thermal resistance, junction-to-ambient (RJA), of the MMBT2222LT1G on an FR-5 board?
The thermal resistance, junction-to-ambient (RJA), is 556 °C/W on an FR-5 board.
- What is the DC current gain (hFE) range of the MMBT2222LT1G at IC = 10 mAdc and VCE = 10 Vdc?
The DC current gain (hFE) ranges from 35 to 100.
- What are the typical applications of the MMBT2222LT1G?
The MMBT2222LT1G is used in general-purpose switching and amplification, automotive systems, industrial control systems, consumer electronics, and medical devices.
- Is the MMBT2222LT1G AEC-Q101 qualified?
Yes, the MMBT2222LT1G is AEC-Q101 qualified and PPAP capable.
- What is the junction and storage temperature range of the MMBT2222LT1G?
The junction and storage temperature range is from −55°C to +150°C.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MMBT2222LT1G?
The collector-emitter saturation voltage (VCE(sat)) ranges from 0.4 to 1.6 Vdc at IC = 150 mAdc and IB = 15 mAdc.
- What is the base-emitter saturation voltage (VBE(sat)) of the MMBT2222LT1G?
The base-emitter saturation voltage (VBE(sat)) ranges from 0.6 to 2.6 Vdc at IC = 150 mAdc and IB = 15 mAdc.
