MMBT2222ALT1G
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onsemi MMBT2222ALT1G

Manufacturer No:
MMBT2222ALT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222ALT1G is a small-signal NPN bipolar junction transistor manufactured by ON Semiconductor. It is designed for general-purpose use in electronic circuits, particularly for amplification, switching, and signal processing. This transistor is known for its high current gain, low saturation voltage, and fast switching speed, making it suitable for a wide range of low-power applications. The MMBT2222ALT1G is housed in a compact SOT-23 package, which is ideal for surface-mount applications and helps in saving board space.

Key Specifications

Specification Value
Transistor Type NPN
Maximum DC Collector Current (IC) 600 mA
Maximum Collector-Emitter Voltage (VCEO) 40 V
Maximum Collector-Base Voltage (VCBO) 75 V
Maximum Emitter-Base Voltage (VEBO) 6 V
Transition Frequency (fT) 250 MHz
Package Type SOT-23
Mounting Type Surface Mount
Maximum Power Dissipation 225 mW
Minimum DC Current Gain (hFE) 100
Maximum Operating Temperature +150 °C
Dimensions 3.04 x 1.4 x 1.01 mm

Key Features

  • High Current Gain (hFE): Provides high amplification capabilities in signal circuits.
  • Low Saturation Voltage: Ensures minimal voltage drop when the transistor is fully on.
  • Fast Switching Speed: Allows for rapid on/off transitions, suitable for high-frequency applications.
  • Compact SOT-23 Package: Ideal for space-constrained designs.
  • Low Cost: Economical component for various electronic applications.
  • Pb-Free Packages: Available and RoHS compliant.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.

Applications

The MMBT2222ALT1G is widely used in various electronic circuits for:

  • Amplification: Due to its high gain and low saturation voltage, it is suitable for signal amplification.
  • Switching: Its fast switching speed makes it ideal for switching applications.
  • Signal Processing: Used in circuits that require high-frequency signal processing.
  • Voltage Regulation: Can be used in voltage regulator circuits to provide stable and regulated output voltages.

Q & A

  1. What is the maximum DC collector current of the MMBT2222ALT1G?

    The maximum DC collector current is 600 mA.

  2. What is the maximum collector-emitter voltage of the MMBT2222ALT1G?

    The maximum collector-emitter voltage is 40 V.

  3. What is the package type of the MMBT2222ALT1G?

    The MMBT2222ALT1G is housed in a SOT-23 package.

  4. What is the maximum operating temperature of the MMBT2222ALT1G?

    The maximum operating temperature is +150 °C.

  5. Is the MMBT2222ALT1G RoHS compliant?

    Yes, the MMBT2222ALT1G is RoHS compliant and Pb-free.

  6. What are the typical applications of the MMBT2222ALT1G?

    It is used in amplification, switching, signal processing, and voltage regulation circuits.

  7. What is the transition frequency of the MMBT2222ALT1G?

    The transition frequency is 250 MHz.

  8. Is the MMBT2222ALT1G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other specific applications.

  9. What are the dimensions of the MMBT2222ALT1G?

    The dimensions are 3.04 x 1.4 x 1.01 mm.

  10. What is the maximum power dissipation of the MMBT2222ALT1G?

    The maximum power dissipation is 225 mW.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:225 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Same Series
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Similar Products

Part Number MMBT2222ALT1G MMBT2222AWT1G MMBT2222ALT3G MMBT2222ATT1G MMBT2222LT1G MMBT2222ALT1H MMBT2222ALT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Obsolete
Transistor Type NPN NPN NPN NPN NPN - NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA 600 mA 600 mA - 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V 40 V 30 V - 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA 1V @ 50mA, 500mA 1V @ 50mA, 500mA 1.6V @ 50mA, 500mA - 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) 10nA (ICBO) - 10nA (ICBO) - 10nA (ICBO) - 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V - 100 @ 150mA, 10V
Power - Max 225 mW 150 mW 300 mW 150 mW 300 mW - 225 mW
Frequency - Transition 300MHz 300MHz 300MHz 300MHz 250MHz - 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount - Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416 TO-236-3, SC-59, SOT-23-3 - TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SC-70-3 (SOT323) SOT-23-3 (TO-236) SC-75, SOT-416 SOT-23-3 (TO-236) - SOT-23-3 (TO-236)

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