MMBT2222ATT1G
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onsemi MMBT2222ATT1G

Manufacturer No:
MMBT2222ATT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SC75 SOT416
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT2222ATT1G is an NPN Bipolar Junction Transistor designed for general purpose amplifier applications. It is housed in the SOT-416/SC-75 package, which is optimized for low power surface mount applications. This transistor is part of onsemi's portfolio of general purpose and low VCE(sat) transistors, making it suitable for a wide range of electronic circuits. The device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant, ensuring environmental sustainability and regulatory compliance.

Key Specifications

Characteristic Symbol Min Max Unit
Collector-Emitter Voltage VCEO - 40 Vdc
Collector-Base Voltage VCBO - 75 Vdc
Emitter-Base Voltage VEBO - 6.0 Vdc
Collector Current - Continuous IC - 600 mAdc
Base Cutoff Current IBL - 20 nAdc
Collector Cutoff Current ICEO - 100 nAdc
Turn-On Time td - 10 ns
Rise Time tr - 25 ns
Storage Time ts - 225 ns
Fall Time tf - 60 ns

Key Features

  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Ensures environmental sustainability and regulatory compliance.
  • General Purpose Amplifier Applications: Designed for a wide range of amplifier circuits.
  • Low Power Surface Mount Package: Housed in the SOT-416/SC-75 package, ideal for low power surface mount applications.
  • Fast Switching Times: Features fast turn-on and turn-off times, making it suitable for high-frequency applications.

Applications

  • General Purpose Amplifier Circuits: Suitable for various amplifier applications in electronic devices.
  • Automotive Electronics: AEC-Q101 qualified, making it suitable for automotive applications.
  • Consumer Electronics: Used in a variety of consumer electronic devices requiring low power amplification.
  • Industrial Control Systems: Can be used in industrial control systems where reliable and efficient amplification is required.

Q & A

  1. What is the maximum collector-emitter voltage of the MMBT2222ATT1G?

    The maximum collector-emitter voltage (VCEO) is 40 Vdc.

  2. What is the package type of the MMBT2222ATT1G?

    The transistor is housed in the SOT-416/SC-75 package.

  3. Is the MMBT2222ATT1G RoHS compliant?

    Yes, the device is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.

  4. What are the typical applications of the MMBT2222ATT1G?

    It is used in general purpose amplifier circuits, automotive electronics, consumer electronics, and industrial control systems.

  5. What is the maximum collector current of the MMBT2222ATT1G?

    The maximum collector current (IC) is 600 mAdc.

  6. What are the switching times of the MMBT2222ATT1G?

    The turn-on time (td) is 10 ns, rise time (tr) is 25 ns, storage time (ts) is 225 ns, and fall time (tf) is 60 ns.

  7. Is the MMBT2222ATT1G AEC-Q101 qualified?

    Yes, it is AEC-Q101 qualified and PPAP capable.

  8. What is the emitter-base breakdown voltage of the MMBT2222ATT1G?

    The emitter-base breakdown voltage (VEBO) is 6.0 Vdc.

  9. What is the base cutoff current of the MMBT2222ATT1G?

    The base cutoff current (IBL) is 20 nAdc.

  10. How many devices are in a reel for the MMBT2222ATT1G?

    There are 3000 devices per reel.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:150 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
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Same Series
NSVMMBT2222ATT1G
NSVMMBT2222ATT1G
TRANS NPN 40V 0.6A SC75 SOT416

Similar Products

Part Number MMBT2222ATT1G MMBT2222ATT3G MMBT2222AWT1G MMBT2222ALT1G
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Active
Transistor Type NPN NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA 1V @ 50mA, 500mA 1V @ 50mA, 500mA
Current - Collector Cutoff (Max) - 10nA (ICBO) - 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 150 mW 150 mW 150 mW 225 mW
Frequency - Transition 300MHz 300MHz 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-75, SOT-416 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-75, SOT-416 SC-75, SOT-416 SC-70-3 (SOT323) SOT-23-3 (TO-236)

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