MMBT2222AWT1G
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onsemi MMBT2222AWT1G

Manufacturer No:
MMBT2222AWT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS NPN 40V 0.6A SC70-3
Delivery:
Payment:
iso14001
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Product Introduction

Overview

The onsemi MMBT2222AWT1G is a general-purpose NPN bipolar junction transistor (BJT) designed for low-power surface mount applications. It is housed in the SOT-323 (SC-70) package, making it suitable for a variety of electronic circuits. This transistor is AEC-Q101 qualified and PPAP capable, ensuring its reliability in automotive and other demanding applications. It is also Pb-free, halogen-free, and RoHS compliant, aligning with modern environmental standards.

Key Specifications

Characteristic Symbol Value Unit
Transistor Type - NPN -
Maximum DC Collector Current IC 600 mA
Maximum Collector Emitter Voltage VCEO 40 Vdc
Maximum Collector Base Voltage VCBO 75 Vdc
Maximum Emitter Base Voltage VEBO 6.0 Vdc
Maximum Power Dissipation PD 150 mW
Minimum DC Current Gain hFE 100 -
Maximum Operating Frequency fT 100 MHz
Package Type - SOT-323 (SC-70) -
Mounting Type - Surface Mount -
Maximum Operating Temperature TJ +150 °C
Dimensions - 2.2 x 1.35 x 0.9 mm -

Key Features

  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  • Pb-free, halogen-free, and RoHS compliant, ensuring environmental compliance.
  • Housed in the SOT-323 (SC-70) package, ideal for low-power surface mount applications.
  • High maximum collector emitter voltage of 40 V and maximum collector current of 600 mA.
  • Maximum operating frequency of 100 MHz, suitable for high-frequency applications.
  • Low power dissipation of 150 mW, reducing thermal management needs.

Applications

The onsemi MMBT2222AWT1G is versatile and can be used in a variety of applications, including:

  • General-purpose amplifier circuits.
  • Automotive electronics due to its AEC-Q101 qualification.
  • Low-power switching and amplification in consumer electronics.
  • Industrial control systems requiring reliable and efficient transistor performance.

Q & A

  1. What is the maximum collector current of the MMBT2222AWT1G transistor?

    The maximum DC collector current is 600 mA.

  2. What is the maximum collector emitter voltage of the MMBT2222AWT1G transistor?

    The maximum collector emitter voltage is 40 Vdc.

  3. What package type is the MMBT2222AWT1G transistor housed in?

    The transistor is housed in the SOT-323 (SC-70) package.

  4. Is the MMBT2222AWT1G transistor RoHS compliant?

    Yes, the transistor is Pb-free, halogen-free, and RoHS compliant.

  5. What is the maximum operating temperature of the MMBT2222AWT1G transistor?

    The maximum operating temperature is +150 °C.

  6. What is the minimum DC current gain of the MMBT2222AWT1G transistor?

    The minimum DC current gain is 100.

  7. What is the maximum power dissipation of the MMBT2222AWT1G transistor?

    The maximum power dissipation is 150 mW.

  8. Is the MMBT2222AWT1G transistor suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.

  9. What is the maximum operating frequency of the MMBT2222AWT1G transistor?

    The maximum operating frequency is 100 MHz.

  10. What are the dimensions of the MMBT2222AWT1G transistor?

    The dimensions are 2.2 x 1.35 x 0.9 mm.

Product Attributes

Transistor Type:NPN
Current - Collector (Ic) (Max):600 mA
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:1V @ 50mA, 500mA
Current - Collector Cutoff (Max):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 150mA, 10V
Power - Max:150 mW
Frequency - Transition:300MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SC-70-3 (SOT323)
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Same Series
MMBT2222AWT1G
MMBT2222AWT1G
TRANS NPN 40V 0.6A SC70-3
SMMBT2222AWT1G
SMMBT2222AWT1G
TRANS NPN 40V 0.6A SC70-3
MMBT2222AWT1
MMBT2222AWT1
TRANS NPN 40V 600MA SOT323

Similar Products

Part Number MMBT2222AWT1G MMBT2222AWT3G MMBT2222AWT1H MMBT2222ALT1G MMBT2222ATT1G MMBT2222AWT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Obsolete
Transistor Type NPN NPN - NPN NPN NPN
Current - Collector (Ic) (Max) 600 mA 600 mA - 600 mA 600 mA 600 mA
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V - 40 V 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 1V @ 50mA, 500mA 1V @ 50mA, 500mA - 1V @ 50mA, 500mA 1V @ 50mA, 500mA 300mV @ 15mA, 150mA
Current - Collector Cutoff (Max) - - - 10nA (ICBO) - -
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V 100 @ 150mA, 10V - 100 @ 150mA, 10V 100 @ 150mA, 10V 100 @ 150mA, 10V
Power - Max 150 mW 150 mW - 225 mW 150 mW 150 mW
Frequency - Transition 300MHz 300MHz - 300MHz 300MHz 300MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount - Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 - TO-236-3, SC-59, SOT-23-3 SC-75, SOT-416 SC-70, SOT-323
Supplier Device Package SC-70-3 (SOT323) SC-70-3 (SOT323) - SOT-23-3 (TO-236) SC-75, SOT-416 SC-70-3 (SOT323)

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