Overview
The MMBT2222AWT1H is a general-purpose NPN silicon transistor produced by onsemi. It is designed for use in various applications, including general-purpose amplifier and switching circuits. The transistor is housed in the SOT-323/SC-70 package, which is suitable for low power surface mount applications. This package is Pb-free, halogen-free, and RoHS compliant, making it environmentally friendly and compliant with current regulations.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 40 | Vdc |
| Collector-Base Voltage | VCBO | 75 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 600 | mAdc |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| Thermal Resistance, Junction-to-Ambient | RθJA | 280 | °C/W |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 150 | mW |
Key Features
- AEC-Q101 Qualified and PPAP Capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-free, halogen-free, and RoHS compliant package.
- Low VCE(sat) of typically 0.2V at IC/IB = 500mA/50mA, optimal for low voltage operation.
- High collector current (IC) of up to 600 mA.
- Complementary to MMBT2907A.
Applications
The MMBT2222AWT1H is designed for general-purpose amplifier applications and switching circuits. It is particularly useful in the driver stage of AF amplifiers and in various low power surface mount applications. Its characteristics make it suitable for use in automotive, communication, computing, consumer, and industrial domains.
Q & A
- What is the collector-emitter voltage rating of the MMBT2222AWT1H? The collector-emitter voltage rating is 40 Vdc.
- What is the maximum collector current for the MMBT2222AWT1H? The maximum collector current is 600 mA.
- Is the MMBT2222AWT1H Pb-free and RoHS compliant? Yes, the MMBT2222AWT1H is Pb-free, halogen-free, and RoHS compliant.
- What is the thermal resistance, junction-to-ambient for the MMBT2222AWT1H? The thermal resistance, junction-to-ambient is 280 °C/W.
- What are the junction and storage temperature ranges for the MMBT2222AWT1H? The junction and storage temperature ranges are -55 to +150 °C.
- What is the typical VCE(sat) for the MMBT2222AWT1H? The typical VCE(sat) is 0.2V at IC/IB = 500mA/50mA.
- Is the MMBT2222AWT1H AEC-Q101 Qualified? Yes, the MMBT2222AWT1H is AEC-Q101 Qualified and PPAP Capable.
- What package type is the MMBT2222AWT1H housed in? The MMBT2222AWT1H is housed in the SOT-323/SC-70 package.
- What are some common applications for the MMBT2222AWT1H? Common applications include general-purpose amplifier and switching circuits, particularly in the driver stage of AF amplifiers.
- Is the MMBT2222AWT1H complementary to any other transistor? Yes, it is complementary to the MMBT2907A.
