Overview
The MMBTA55LT1G is a PNP silicon bipolar junction transistor (BJT) produced by onsemi. This transistor is part of the MMBTA55L series and is packaged in a SOT-23 (TO-236) case. It is designed for general-purpose amplifier and switching applications, offering a balance of high current gain and low saturation voltage. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. It is also Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -60 | Vdc |
| Collector-Base Voltage | VCBO | -60 | Vdc |
| Emitter-Base Voltage | VEBO | -4.0 | Vdc |
| Collector Current - Continuous | IC | -500 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 mW / 1.8 mW/°C | mW / mW/°C |
| Thermal Resistance, Junction-to-Ambient | RθJA | 556 °C/W | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = -10 mA, VCE = -1.0 V) | hFE | 100 | - |
| Collector-Emitter Saturation Voltage (IC = -100 mA, IB = -10 mA) | VCE(sat) | -0.25 | Vdc |
| Base-Emitter On Voltage (IC = -100 mA, VCE = -1.0 V) | VBE(on) | -1.2 | Vdc |
| Current-Gain - Bandwidth Product (fT) | fT | 50 MHz | MHz |
Key Features
- AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
- Pb-free, halogen-free, and RoHS compliant.
- High DC current gain (hFE) of 100.
- Low collector-emitter saturation voltage (VCE(sat)) of -0.25 V.
- Low base-emitter on voltage (VBE(on)) of -1.2 V.
- High current-gain - bandwidth product (fT) of 50 MHz.
- Small SOT-23 package, ideal for space-saving designs.
Applications
- General-purpose amplifier applications.
- Switching applications in various electronic circuits.
- Automotive systems requiring AEC-Q101 qualification.
- Consumer electronics where space and environmental compliance are critical.
- Industrial control systems and automation.
Q & A
- What is the collector-emitter voltage rating of the MMBTA55LT1G transistor?
The collector-emitter voltage rating is -60 Vdc.
- What is the maximum continuous collector current for the MMBTA55LT1G?
The maximum continuous collector current is -500 mA.
- Is the MMBTA55LT1G transistor RoHS compliant?
Yes, the MMBTA55LT1G is Pb-free, halogen-free, and RoHS compliant.
- What is the thermal resistance (RθJA) of the MMBTA55LT1G on an FR-5 board?
The thermal resistance (RθJA) is 556 °C/W.
- What is the DC current gain (hFE) of the MMBTA55LT1G transistor?
The DC current gain (hFE) is 100.
- What is the collector-emitter saturation voltage (VCE(sat)) of the MMBTA55LT1G?
The collector-emitter saturation voltage (VCE(sat)) is -0.25 V.
- What is the base-emitter on voltage (VBE(on)) of the MMBTA55LT1G?
The base-emitter on voltage (VBE(on)) is -1.2 V.
- What is the current-gain - bandwidth product (fT) of the MMBTA55LT1G?
The current-gain - bandwidth product (fT) is 50 MHz.
- In what package is the MMBTA55LT1G transistor available?
The MMBTA55LT1G is available in a SOT-23 (TO-236) package.
- Is the MMBTA55LT1G suitable for automotive applications?
Yes, the MMBTA55LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.
