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BST52,135
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Nexperia USA Inc. BST52,135

Manufacturer No:
BST52,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN DARL 80V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BST52,135 is an NPN Darlington transistor produced by Nexperia USA Inc. It is part of the BST50-BST51-BST52 series and is designed for various industrial and automotive applications. This transistor is packaged in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package, making it suitable for surface-mount assembly. The BST52 is AEC-Q101 qualified, ensuring its reliability and performance in demanding environments.

Key Specifications

Type numberPackageSize (mm)hFE [min]t off (ns)PolarityComplementI C [max] (mA)Ptot [max] (mW)V CES [max] (V)fT [min] (MHz)
BST52SOT894.5 x 2.5 x 1.520001500NPNBST62500130080200

Key Features

  • Integrated diode and resistor for enhanced functionality.
  • AEC-Q101 qualified for automotive applications.
  • High current gain (hFE) of 2000 minimum.
  • Maximum collector current (I C) of 500 mA.
  • Maximum total power dissipation (Ptot) of 1300 mW.
  • Maximum collector-emitter voltage (V CES) of 80 V.

Applications

The BST52,135 is suitable for a variety of industrial and automotive switching applications, including:

  • Print hammer drivers.
  • Solenoid drivers.
  • Relay and lamp driving.

Q & A

  1. What is the package type of the BST52,135 transistor? The BST52,135 is packaged in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.
  2. What is the minimum current gain (hFE) of the BST52,135? The minimum current gain (hFE) is 2000.
  3. What is the maximum collector current (I C) of the BST52,135? The maximum collector current (I C) is 500 mA.
  4. Is the BST52,135 AEC-Q101 qualified? Yes, the BST52,135 is AEC-Q101 qualified.
  5. What are the typical applications of the BST52,135? Typical applications include print hammer drivers, solenoid drivers, and relay and lamp driving.
  6. What is the maximum total power dissipation (Ptot) of the BST52,135? The maximum total power dissipation (Ptot) is 1300 mW.
  7. What is the maximum collector-emitter voltage (V CES) of the BST52,135? The maximum collector-emitter voltage (V CES) is 80 V.
  8. What is the turn-off time (t off) of the BST52,135? The turn-off time (t off) is 1500 ns.
  9. Does the BST52,135 have an integrated diode and resistor? Yes, it does have an integrated diode and resistor.
  10. What is the PNP complement of the BST52,135? The PNP complement is the BST62.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max):500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 500mA, 10V
Power - Max:1.3 W
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89
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In Stock

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Same Series
BST50,115
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BST52,115
BST52,115
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BST51,135
BST51,135
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Similar Products

Part Number BST52,135 BST51,135 BST52,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 1.3V @ 500µA, 500mA 1.3V @ 500µA, 500mA 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max) 500nA 50nA 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA, 10V 2000 @ 500mA, 10V 2000 @ 500mA, 10V
Power - Max 1.3 W 1.3 W 1.3 W
Frequency - Transition 200MHz 200MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89 SOT-89 SOT-89

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