BST52,135
  • Share:

Nexperia USA Inc. BST52,135

Manufacturer No:
BST52,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS NPN DARL 80V 1A SOT89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BST52,135 is an NPN Darlington transistor produced by Nexperia USA Inc. It is part of the BST50-BST51-BST52 series and is designed for various industrial and automotive applications. This transistor is packaged in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package, making it suitable for surface-mount assembly. The BST52 is AEC-Q101 qualified, ensuring its reliability and performance in demanding environments.

Key Specifications

Type numberPackageSize (mm)hFE [min]t off (ns)PolarityComplementI C [max] (mA)Ptot [max] (mW)V CES [max] (V)fT [min] (MHz)
BST52SOT894.5 x 2.5 x 1.520001500NPNBST62500130080200

Key Features

  • Integrated diode and resistor for enhanced functionality.
  • AEC-Q101 qualified for automotive applications.
  • High current gain (hFE) of 2000 minimum.
  • Maximum collector current (I C) of 500 mA.
  • Maximum total power dissipation (Ptot) of 1300 mW.
  • Maximum collector-emitter voltage (V CES) of 80 V.

Applications

The BST52,135 is suitable for a variety of industrial and automotive switching applications, including:

  • Print hammer drivers.
  • Solenoid drivers.
  • Relay and lamp driving.

Q & A

  1. What is the package type of the BST52,135 transistor? The BST52,135 is packaged in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package.
  2. What is the minimum current gain (hFE) of the BST52,135? The minimum current gain (hFE) is 2000.
  3. What is the maximum collector current (I C) of the BST52,135? The maximum collector current (I C) is 500 mA.
  4. Is the BST52,135 AEC-Q101 qualified? Yes, the BST52,135 is AEC-Q101 qualified.
  5. What are the typical applications of the BST52,135? Typical applications include print hammer drivers, solenoid drivers, and relay and lamp driving.
  6. What is the maximum total power dissipation (Ptot) of the BST52,135? The maximum total power dissipation (Ptot) is 1300 mW.
  7. What is the maximum collector-emitter voltage (V CES) of the BST52,135? The maximum collector-emitter voltage (V CES) is 80 V.
  8. What is the turn-off time (t off) of the BST52,135? The turn-off time (t off) is 1500 ns.
  9. Does the BST52,135 have an integrated diode and resistor? Yes, it does have an integrated diode and resistor.
  10. What is the PNP complement of the BST52,135? The PNP complement is the BST62.

Product Attributes

Transistor Type:NPN - Darlington
Current - Collector (Ic) (Max):1 A
Voltage - Collector Emitter Breakdown (Max):80 V
Vce Saturation (Max) @ Ib, Ic:1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max):500nA
DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 500mA, 10V
Power - Max:1.3 W
Frequency - Transition:200MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-243AA
Supplier Device Package:SOT-89
0 Remaining View Similar

In Stock

$0.70
1,170

Please send RFQ , we will respond immediately.

Same Series
BST50,115
BST50,115
TRANS NPN DARL 45V 1A SOT89
BST51,115
BST51,115
TRANS NPN DARL 60V 1A SOT89
BST52,115
BST52,115
TRANS NPN DARL 80V 1A SOT89
BST51,135
BST51,135
TRANS NPN DARL 60V 1A SOT89

Similar Products

Part Number BST52,135 BST51,135 BST52,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type NPN - Darlington NPN - Darlington NPN - Darlington
Current - Collector (Ic) (Max) 1 A 1 A 1 A
Voltage - Collector Emitter Breakdown (Max) 80 V 60 V 80 V
Vce Saturation (Max) @ Ib, Ic 1.3V @ 500µA, 500mA 1.3V @ 500µA, 500mA 1.3V @ 500µA, 500mA
Current - Collector Cutoff (Max) 500nA 50nA 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA, 10V 2000 @ 500mA, 10V 2000 @ 500mA, 10V
Power - Max 1.3 W 1.3 W 1.3 W
Frequency - Transition 200MHz 200MHz 200MHz
Operating Temperature 150°C (TJ) 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-243AA TO-243AA TO-243AA
Supplier Device Package SOT-89 SOT-89 SOT-89

Related Product By Categories

BC817-25-7-F
BC817-25-7-F
Diodes Incorporated
TRANS NPN 45V 0.5A SOT23-3
BCX55-16,115
BCX55-16,115
Nexperia USA Inc.
TRANS NPN 60V 1A SOT89
BFS20,235
BFS20,235
Nexperia USA Inc.
TRANS NPN 20V 0.025A TO236AB
BC848BL3E6327XTMA1
BC848BL3E6327XTMA1
Infineon Technologies
BC848 - GENERAL PURPOSE TRANSIST
BC846A-7-F
BC846A-7-F
Diodes Incorporated
TRANS NPN 65V 0.1A SOT23-3
NSS20101JT1G
NSS20101JT1G
onsemi
TRANS NPN 20V 1A SC89-3
MMBT3906L3-TP
MMBT3906L3-TP
Micro Commercial Co
TRANS PNP 40V 0.2A DFN1006-3
BCX5616H6327XTSA1
BCX5616H6327XTSA1
Infineon Technologies
TRANS NPN 80V 1A SOT89
BCX56-16115
BCX56-16115
NXP USA Inc.
NOW NEXPERIA SMALL SIGNAL BIPOLA
ST901TFP
ST901TFP
STMicroelectronics
TRANS NPN DARL 400V 4A TO220FP
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BCX56-16 TR
BCX56-16 TR
Central Semiconductor Corp
TRANS NPN 80V 1A SOT89

Related Product By Brand

BAS40-07,215
BAS40-07,215
Nexperia USA Inc.
DIODE ARRAY SCHOTTKY 40V SOT143B
PMEG6045ETPX
PMEG6045ETPX
Nexperia USA Inc.
DIODE SCHOTTKY 60V 4.5A SOD128
PMEG2010BEA,115
PMEG2010BEA,115
Nexperia USA Inc.
DIODE SCHOTTKY 20V 1A SOD323
PMEG4005EJF
PMEG4005EJF
Nexperia USA Inc.
PMEG4005EJ/SOD323/SOD2
PMEG3010BEAZ
PMEG3010BEAZ
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1A SOD323
BZX384-B10,115
BZX384-B10,115
Nexperia USA Inc.
DIODE ZENER 10V 300MW SOD323
BZX84-B9V1/DG/B4R
BZX84-B9V1/DG/B4R
Nexperia USA Inc.
DIODE ZENER 9.1V 250MW TO236AB
NX3008PBK,215
NX3008PBK,215
Nexperia USA Inc.
MOSFET P-CH 30V 230MA TO236AB
74HC4050D,652
74HC4050D,652
Nexperia USA Inc.
IC BUFFER NON-INVERT 6V 16SO
74HC85DB,118
74HC85DB,118
Nexperia USA Inc.
NEXPERIA 74HC85DB - MAGNITUDE CO
74LVC1G11GW,125
74LVC1G11GW,125
Nexperia USA Inc.
IC GATE AND 1CH 3-INP 6TSSOP
74AHC04D-Q100J
74AHC04D-Q100J
Nexperia USA Inc.
IC INVERTER 6CH 1-INP 14SO