Overview
The BC33725BU is an NPN epitaxial silicon transistor manufactured by onsemi. This transistor is designed for a variety of applications, including switching and amplifier stages. It is particularly suitable for audio-frequency (AF) driver stages and low-power output stages. The BC33725BU is part of the BC337 series, which complements the BC327 and BC328 transistors.
Key Specifications
| Parameter | Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | - | - | 45 | V | |
| Collector-Emitter Breakdown Voltage (BVCES) | IC = 0.1 mA, VBE = 0 | - | 50 | V | |
| Emitter-Base Breakdown Voltage (BVEBO) | IE = 0.1 mA, IC = 0 | - | 5 | V | |
| Collector Current (IC) | - | - | 800 | mA | |
| Junction Temperature (TJ) | - | - | 150 | °C | |
| Storage Temperature (TSTG) | - | -55 | 150 | °C | |
| Power Dissipation (PD) | - | - | 625 | mW | |
| Thermal Resistance, Junction to Ambient (RθJA) | - | - | 200 | °C/W | |
| DC Current Gain (hFE1) | VCE = 1 V, IC = 100 mA | 160 | - | 400 | - |
| Collector-Emitter Saturation Voltage (VCE(sat)) | IC = 500 mA, IB = 50 mA | - | - | 0.7 | V |
| Base-Emitter On Voltage (VBE(on)) | VCE = 1 V, IC = 300 mA | - | - | 1.2 | V |
| Current Gain Bandwidth Product (fT) | VCE = 5 V, IC = 10 mA, f = 50 MHz | - | 100 | - | MHz |
| Output Capacitance (Cob) | VCB = 10 V, IE = 0, f = 1 MHz | - | 12 | - | pF |
Key Features
- Switching and amplifier applications
- Suitable for AF-driver stages and low-power output stages
- Complement to BC327 and BC328 transistors
- High DC current gain (hFE) with classifications of 160-400 for hFE1 and 60-170 for hFE2
- Low collector-emitter saturation voltage (VCE(sat)) of 0.7 V
- High current gain bandwidth product (fT) of 100 MHz
- Pb-free packaging options available
Applications
- Audio-frequency (AF) driver stages
- Low-power output stages
- General-purpose switching and amplification
- Consumer electronics
- Industrial control circuits
- Automotive electronics
Q & A
- What is the maximum collector-emitter voltage (VCEO) for the BC33725BU?
The maximum collector-emitter voltage (VCEO) is 45 V.
- What is the maximum collector current (IC) for the BC33725BU?
The maximum collector current (IC) is 800 mA.
- What is the junction temperature (TJ) range for the BC33725BU?
The junction temperature (TJ) range is up to 150°C.
- What is the storage temperature (TSTG) range for the BC33725BU?
The storage temperature (TSTG) range is from -55°C to 150°C.
- What are the typical applications of the BC33725BU transistor?
The BC33725BU is typically used in AF-driver stages, low-power output stages, and general-purpose switching and amplification.
- What is the DC current gain (hFE) classification for the BC33725BU?
The DC current gain (hFE) classification for the BC33725BU is 160-400 for hFE1 and 60-170 for hFE2.
- What is the collector-emitter saturation voltage (VCE(sat)) for the BC33725BU?
The collector-emitter saturation voltage (VCE(sat)) is 0.7 V.
- What is the current gain bandwidth product (fT) for the BC33725BU?
The current gain bandwidth product (fT) is 100 MHz.
- Is the BC33725BU available in Pb-free packaging?
- What is the thermal resistance, junction to ambient (RθJA), for the BC33725BU?
The thermal resistance, junction to ambient (RθJA), is 200°C/W.
