BC856AQBZ
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Nexperia USA Inc. BC856AQBZ

Manufacturer No:
BC856AQBZ
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
SMALL SIGNAL BIPOLAR IN DFN PACK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BC856AQBZ is a PNP general-purpose bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is part of the BC856 series, known for its low current and low voltage characteristics, making it suitable for a wide range of applications. The BC856AQBZ is packaged in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package, which is ideal for space-constrained designs.

Key Specifications

ParameterValue
Type NumberBC856AQBZ
PackageSOT23 (TO-236AB)
Channel TypePNP
Maximum Collector Current (IC)100 mA
Maximum Collector-Emitter Voltage (VCEO)65 V
Minimum Current Gain (hFE)125
Maximum Current Gain (hFE)475
Maximum Junction Temperature (TJ)150°C
Maximum Total Power Dissipation (Ptot)250 mW
Automotive QualifiedYes (AEC-Q101)

Key Features

  • Low current (max. 100 mA) and low voltage (max. 65 V) capabilities.
  • PNP general-purpose transistor suitable for switching and amplification applications.
  • Compact SOT23 (TO-236AB) SMD plastic package, ideal for space-constrained designs.
  • Qualified according to AEC-Q101, making it suitable for automotive applications.
  • High current gain (hFE) range from 125 to 475.
  • Maximum junction temperature of 150°C.

Applications

The BC856AQBZ transistor is versatile and can be used in various applications across different industries, including:

  • Automotive: Due to its AEC-Q101 qualification, it is suitable for use in automotive systems.
  • Industrial: General-purpose switching and amplification in industrial control systems.
  • Consumer Electronics: Used in mobile, computing, and consumer electronic devices.
  • Power and Computing: Suitable for power management and computing applications.

Q & A

  1. What is the maximum collector current of the BC856AQBZ transistor?
    The maximum collector current is 100 mA.
  2. What is the maximum collector-emitter voltage of the BC856AQBZ transistor?
    The maximum collector-emitter voltage is 65 V.
  3. In what package is the BC856AQBZ transistor available?
    The BC856AQBZ transistor is available in the SOT23 (TO-236AB) SMD plastic package.
  4. Is the BC856AQBZ transistor automotive qualified?
    Yes, it is qualified according to AEC-Q101.
  5. What is the minimum current gain (hFE) of the BC856AQBZ transistor?
    The minimum current gain is 125.
  6. What is the maximum junction temperature of the BC856AQBZ transistor?
    The maximum junction temperature is 150°C.
  7. What are the typical applications of the BC856AQBZ transistor?
    It is used in automotive, industrial, consumer electronics, power, and computing applications.
  8. How much total power can the BC856AQBZ transistor dissipate?
    The maximum total power dissipation is 250 mW.
  9. What is the NPN complement of the BC856AQBZ transistor?
    The NPN complement is the BC846AQBZ.
  10. Where can I purchase the BC856AQBZ transistor?
    You can purchase it from Nexperia's official distributors or through various electronic component suppliers.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):65 V
Vce Saturation (Max) @ Ib, Ic:650mV @ 5mA, 100mA
Current - Collector Cutoff (Max):15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:125 @ 2mA, 5V
Power - Max:340 mW
Frequency - Transition:100MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Package / Case:3-XDFN Exposed Pad
Supplier Device Package:DFN1110D-3
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