PBSS5540Z,115
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Nexperia USA Inc. PBSS5540Z,115

Manufacturer No:
PBSS5540Z,115
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PNP 40V 5A SOT223
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PBSS5540Z,115 is a high-performance PNP bipolar junction transistor (BJT) manufactured by Nexperia USA Inc. This transistor is designed to operate in a variety of applications requiring low collector-emitter saturation voltage and high current capabilities. It is packaged in a SOT-223 (SC-73) package, making it suitable for surface mount technology (SMT) assembly. The device is compliant with several environmental and safety standards, including EU RoHS, CN RoHS, and ELV, ensuring its use in environmentally friendly and sustainable electronic systems.

Key Specifications

Parameter Value Unit
Type Number PBSS5540Z
Orderable Part Number PBSS5540Z,115
Package SOT-223 (SC-73)
Collector-Emitter Voltage (VCEO) 40 V
Collector Current (IC) 5 A
Power Dissipation (Pd) 1.35 W
Transition Frequency (fT) 120 MHz
DC Current Gain (hFE) 350
Junction Temperature (TJ) 150 °C
Automotive Qualified No

Key Features

  • Low Collector-Emitter Saturation Voltage: Ensures efficient operation with reduced power losses.
  • High Current Capability: Supports applications requiring high current handling up to 5 A.
  • Improved Device Reliability: Reduced heat generation enhances the overall reliability of the device.
  • Environmental Compliance: Compliant with EU RoHS, CN RoHS, and ELV directives, making it suitable for use in environmentally friendly systems.
  • SMT Assembly: Packaged in SOT-223, facilitating surface mount technology assembly.

Applications

  • Supply Line Switching Circuits: Ideal for switching applications due to its low VCEsat and high current capabilities.
  • Battery Management Applications: Suitable for battery-powered equipment and battery management systems.
  • DC/DC Converter Applications: Used in DC/DC converters for efficient power conversion.
  • Strobe Flash Units: Applicable in high-current pulse applications such as strobe flash units.
  • Heavy Duty Battery Powered Equipment: Suitable for motor and lamp drivers in heavy-duty battery-powered equipment.
  • MOSFET Driver Applications: Can be used as a driver for MOSFETs in various power management circuits.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the PBSS5540Z,115 transistor?

    The collector-emitter voltage (VCEO) of the PBSS5540Z,115 transistor is 40 V.

  2. What is the maximum collector current (IC) of the PBSS5540Z,115 transistor?

    The maximum collector current (IC) of the PBSS5540Z,115 transistor is 5 A.

  3. What is the power dissipation (Pd) of the PBSS5540Z,115 transistor?

    The power dissipation (Pd) of the PBSS5540Z,115 transistor is 1.35 W.

  4. What is the transition frequency (fT) of the PBSS5540Z,115 transistor?

    The transition frequency (fT) of the PBSS5540Z,115 transistor is 120 MHz.

  5. Is the PBSS5540Z,115 transistor automotive qualified?

    No, the PBSS5540Z,115 transistor is not automotive qualified.

  6. What package type is the PBSS5540Z,115 transistor available in?

    The PBSS5540Z,115 transistor is available in the SOT-223 (SC-73) package.

  7. Is the PBSS5540Z,115 transistor RoHS compliant?

    Yes, the PBSS5540Z,115 transistor is RoHS compliant.

  8. What are some typical applications of the PBSS5540Z,115 transistor?

    The PBSS5540Z,115 transistor is typically used in supply line switching circuits, battery management applications, DC/DC converter applications, strobe flash units, and heavy-duty battery-powered equipment.

  9. What is the junction temperature (TJ) of the PBSS5540Z,115 transistor?

    The junction temperature (TJ) of the PBSS5540Z,115 transistor is 150 °C.

  10. What is the DC current gain (hFE) of the PBSS5540Z,115 transistor?

    The DC current gain (hFE) of the PBSS5540Z,115 transistor is 350.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):5 A
Voltage - Collector Emitter Breakdown (Max):40 V
Vce Saturation (Max) @ Ib, Ic:160mV @ 200mA, 2A
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:150 @ 2A, 2V
Power - Max:2 W
Frequency - Transition:120MHz
Operating Temperature:150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-261-4, TO-261AA
Supplier Device Package:SOT-223
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Similar Products

Part Number PBSS5540Z,115 PBSS4540Z,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
Transistor Type PNP NPN
Current - Collector (Ic) (Max) 5 A 5 A
Voltage - Collector Emitter Breakdown (Max) 40 V 40 V
Vce Saturation (Max) @ Ib, Ic 160mV @ 200mA, 2A 355mV @ 500mA, 5A
Current - Collector Cutoff (Max) 100nA (ICBO) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A, 2V 250 @ 2A, 2V
Power - Max 2 W 2 W
Frequency - Transition 120MHz 130MHz
Operating Temperature 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Package / Case TO-261-4, TO-261AA TO-261-4, TO-261AA
Supplier Device Package SOT-223 SOT-223

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