Overview
The SBC846ALT1G is a general-purpose NPN silicon transistor from onsemi, designed for a wide range of applications. This transistor is part of the BC846ALT1G series, which is known for its reliability and performance in various electronic circuits. The SBC846ALT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 65 | Vdc |
| Collector-Base Voltage | VCBO | 80 | Vdc |
| Emitter-Base Voltage | VEBO | 6.0 | Vdc |
| Collector Current - Continuous | IC | 100 | mAdc |
| DC Current Gain (IC = 10 mA, VCE = 5.0 V) | hFE | 110 - 420 | |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VCE(sat) | 0.25 | V |
| Base-Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) | VBE(sat) | 0.7 - 0.9 | V |
| Current-Gain - Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) | fT | 100 | MHz |
| Output Capacitance (VCB = 10 V, f = 1.0 MHz) | Cobo | 4.5 | pF |
Key Features
- Moisture Sensitivity Level: 1
- ESD Rating - Human Body Model: > 4000 V, Machine Model: > 400 V
- AEC-Q101 Qualified and PPAP Capable for automotive and other stringent applications
- Pb-Free, Halogen Free/BFR Free, and RoHS Compliant
- High DC Current Gain (hFE) for reliable amplification
- Low Collector-Emitter Saturation Voltage for efficient switching
- High Current-Gain - Bandwidth Product for high-frequency applications
Applications
- Automotive systems requiring high reliability and quality standards
- General-purpose amplification and switching circuits
- Audio and video equipment
- Industrial control systems
- Consumer electronics requiring robust and efficient transistor performance
Q & A
- What is the maximum collector-emitter voltage for the SBC846ALT1G transistor?
The maximum collector-emitter voltage (VCEO) is 65 Vdc.
- Is the SBC846ALT1G transistor suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring stringent quality standards.
- What is the DC current gain (hFE) of the SBC846ALT1G transistor?
The DC current gain (hFE) ranges from 110 to 420 at IC = 10 mA and VCE = 5.0 V.
- What is the collector-emitter saturation voltage (VCE(sat)) of the SBC846ALT1G transistor?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 V at IC = 10 mA and IB = 0.5 mA.
- Is the SBC846ALT1G transistor RoHS compliant?
Yes, the SBC846ALT1G transistor is Pb-Free, Halogen Free/BFR Free, and RoHS Compliant.
- What is the current-gain - bandwidth product (fT) of the SBC846ALT1G transistor?
The current-gain - bandwidth product (fT) is 100 MHz at IC = 10 mA, VCE = 5.0 Vdc, and f = 100 MHz.
- What is the output capacitance (Cobo) of the SBC846ALT1G transistor?
The output capacitance (Cobo) is 4.5 pF at VCB = 10 V and f = 1.0 MHz.
- What are the ESD ratings for the SBC846ALT1G transistor?
The ESD ratings are > 4000 V for the Human Body Model and > 400 V for the Machine Model.
- What is the maximum collector current for the SBC846ALT1G transistor?
The maximum collector current (IC) is 100 mA.
- What is the base-emitter saturation voltage (VBE(sat)) of the SBC846ALT1G transistor?
The base-emitter saturation voltage (VBE(sat)) ranges from 0.7 to 0.9 V at IC = 10 mA and IB = 0.5 mA.
