Overview
The MMBT5088LT1G is a low noise NPN silicon transistor produced by onsemi. This device is part of the MMBT5088L series and is designed for applications requiring low noise and high reliability. It is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding environments. The transistor is Pb-free, halogen-free, and RoHS compliant, ensuring environmental sustainability.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 30 | Vdc |
| Collector-Base Voltage | VCBO | 35 | Vdc |
| Emitter-Base Voltage | VEBO | 4.5 | Vdc |
| Collector Current - Continuous | IC | 50 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RθJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 100 μAdc, VCE = 5.0 Vdc) | hFE | 300 - 400 | |
| Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VCE(sat) | 0.5 | Vdc |
| Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VBE(sat) | 0.8 | Vdc |
| Current-Gain — Bandwidth Product (IC = 500 μAdc, VCE = 5.0 Vdc, f = 20 MHz) | fT | 50 | MHz |
Key Features
- Low noise operation, making it suitable for applications requiring minimal noise interference.
- AEC-Q101 qualified and PPAP capable, ensuring high reliability in automotive and other critical applications.
- Pb-free, halogen-free, and RoHS compliant, aligning with environmental regulations.
- High DC current gain (hFE) ranging from 300 to 400 at IC = 100 μAdc and VCE = 5.0 Vdc.
- Low collector-emitter saturation voltage (VCE(sat)) of 0.5 Vdc and base-emitter saturation voltage (VBE(sat)) of 0.8 Vdc.
- High current-gain — bandwidth product (fT) of 50 MHz.
Applications
The MMBT5088LT1G transistor is versatile and can be used in a variety of applications, including:
- Automotive systems: Due to its AEC-Q101 qualification, it is suitable for use in automotive electronics.
- Audio and video equipment: Its low noise characteristics make it ideal for audio and video amplifiers.
- Industrial control systems: It can be used in various industrial control circuits where reliability and low noise are crucial.
- Consumer electronics: Suitable for use in consumer electronic devices that require high performance and low noise.
Q & A
- What is the maximum collector-emitter voltage (VCEO) for the MMBT5088LT1G transistor?
The maximum collector-emitter voltage (VCEO) is 30 Vdc. - What is the thermal resistance, junction-to-ambient (RθJA), for the FR-5 board?
The thermal resistance, junction-to-ambient (RθJA), for the FR-5 board is 556 °C/W. - What are the junction and storage temperature ranges for this transistor?
The junction and storage temperature ranges are -55 to +150 °C. - What is the DC current gain (hFE) for the MMBT5088LT1G transistor at IC = 100 μAdc and VCE = 5.0 Vdc?
The DC current gain (hFE) ranges from 300 to 400. - Is the MMBT5088LT1G transistor RoHS compliant?
Yes, the MMBT5088LT1G transistor is Pb-free, halogen-free, and RoHS compliant. - What is the collector-emitter saturation voltage (VCE(sat)) for this transistor?
The collector-emitter saturation voltage (VCE(sat)) is 0.5 Vdc. - What is the current-gain — bandwidth product (fT) for the MMBT5088LT1G transistor?
The current-gain — bandwidth product (fT) is 50 MHz. - What are some typical applications for the MMBT5088LT1G transistor?
Typical applications include automotive systems, audio and video equipment, industrial control systems, and consumer electronics. - Is the MMBT5088LT1G transistor AEC-Q101 qualified?
Yes, the MMBT5088LT1G transistor is AEC-Q101 qualified and PPAP capable. - What is the package type for the MMBT5088LT1G transistor?
The package type is SOT-23 (TO-236).
