Overview
The MMBT5087LT1G is a low noise PNP silicon transistor manufactured by onsemi. This device is designed to meet the stringent requirements of automotive and other applications that demand unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and performance. The transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.
The MMBT5087LT1G is packaged in a SOT-23 (TO-236) case, which is compact and suitable for a wide range of applications. It features low noise characteristics, making it ideal for use in audio and other sensitive electronic circuits.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | -50 | Vdc |
| Collector-Base Voltage | VCBO | -50 | Vdc |
| Emitter-Base Voltage | VEBO | -3.0 | Vdc |
| Collector Current - Continuous | IC | -50 | mAdc |
| Thermal Resistance, Junction-to-Ambient | RθJA | 417 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (hFE) | hFE | 250 - 800 | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | -0.3 | Vdc |
| Base-Emitter Saturation Voltage | VBE(sat) | 0.85 | Vdc |
| Current-Gain — Bandwidth Product | fT | 40 | MHz |
| Output Capacitance | Cobo | 4.0 | pF |
Key Features
- Low Noise Characteristics: The MMBT5087LT1G is designed with low noise figures, making it suitable for applications requiring minimal noise interference.
- AEC-Q101 Qualified and PPAP Capable: This transistor meets the stringent automotive standards, ensuring reliability and performance in demanding environments.
- Pb-free, Halogen-free/BFR-free, and RoHS Compliant: Environmentally friendly packaging that adheres to global regulatory standards.
- Compact SOT-23 Package: The TO-236 case is compact and versatile, suitable for a wide range of electronic designs.
- High DC Current Gain (hFE): With a DC current gain ranging from 250 to 800, this transistor offers high amplification capabilities.
- Low Collector-Emitter and Base-Emitter Saturation Voltages: Ensures efficient operation with minimal voltage drop.
Applications
- Automotive Electronics: Given its AEC-Q101 qualification, this transistor is ideal for use in automotive systems, including audio amplifiers and other control circuits.
- Audio Equipment: The low noise characteristics make it suitable for use in audio amplifiers, pre-amplifiers, and other audio equipment.
- General Purpose Amplification: Can be used in various general-purpose amplification circuits where low noise and high reliability are required.
- Industrial Control Systems: Suitable for use in industrial control systems that require reliable and low-noise transistor operation.
Q & A
- What is the maximum collector-emitter voltage for the MMBT5087LT1G?
The maximum collector-emitter voltage (VCEO) is -50 Vdc.
- Is the MMBT5087LT1G AEC-Q101 qualified?
- What is the thermal resistance, junction-to-ambient (RθJA) for this transistor?
The thermal resistance, junction-to-ambient (RθJA) is 417 °C/W.
- What is the DC current gain (hFE) range for the MMBT5087LT1G?
The DC current gain (hFE) ranges from 250 to 800.
- What is the collector-emitter saturation voltage (VCE(sat)) for this transistor?
The collector-emitter saturation voltage (VCE(sat)) is -0.3 Vdc.
- Is the MMBT5087LT1G Pb-free and RoHS compliant?
- What is the current-gain — bandwidth product (fT) for the MMBT5087LT1G?
The current-gain — bandwidth product (fT) is 40 MHz.
- What is the output capacitance (Cobo) for this transistor?
The output capacitance (Cobo) is 4.0 pF.
- In what package is the MMBT5087LT1G available?
The MMBT5087LT1G is available in a SOT-23 (TO-236) package.
- What are some typical applications for the MMBT5087LT1G?
Typical applications include automotive electronics, audio equipment, general-purpose amplification, and industrial control systems.
