MMBT5087LT1G
  • Share:

onsemi MMBT5087LT1G

Manufacturer No:
MMBT5087LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PNP 50V 0.05A SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMBT5087LT1G is a low noise PNP silicon transistor manufactured by onsemi. This device is designed to meet the stringent requirements of automotive and other applications that demand unique site and control change requirements. It is AEC-Q101 qualified and PPAP capable, ensuring high reliability and performance. The transistor is Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.

The MMBT5087LT1G is packaged in a SOT-23 (TO-236) case, which is compact and suitable for a wide range of applications. It features low noise characteristics, making it ideal for use in audio and other sensitive electronic circuits.

Key Specifications

Characteristic Symbol Value Unit
Collector-Emitter Voltage VCEO -50 Vdc
Collector-Base Voltage VCBO -50 Vdc
Emitter-Base Voltage VEBO -3.0 Vdc
Collector Current - Continuous IC -50 mAdc
Thermal Resistance, Junction-to-Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ, Tstg -55 to +150 °C
DC Current Gain (hFE) hFE 250 - 800 -
Collector-Emitter Saturation Voltage VCE(sat) -0.3 Vdc
Base-Emitter Saturation Voltage VBE(sat) 0.85 Vdc
Current-Gain — Bandwidth Product fT 40 MHz
Output Capacitance Cobo 4.0 pF

Key Features

  • Low Noise Characteristics: The MMBT5087LT1G is designed with low noise figures, making it suitable for applications requiring minimal noise interference.
  • AEC-Q101 Qualified and PPAP Capable: This transistor meets the stringent automotive standards, ensuring reliability and performance in demanding environments.
  • Pb-free, Halogen-free/BFR-free, and RoHS Compliant: Environmentally friendly packaging that adheres to global regulatory standards.
  • Compact SOT-23 Package: The TO-236 case is compact and versatile, suitable for a wide range of electronic designs.
  • High DC Current Gain (hFE): With a DC current gain ranging from 250 to 800, this transistor offers high amplification capabilities.
  • Low Collector-Emitter and Base-Emitter Saturation Voltages: Ensures efficient operation with minimal voltage drop.

Applications

  • Automotive Electronics: Given its AEC-Q101 qualification, this transistor is ideal for use in automotive systems, including audio amplifiers and other control circuits.
  • Audio Equipment: The low noise characteristics make it suitable for use in audio amplifiers, pre-amplifiers, and other audio equipment.
  • General Purpose Amplification: Can be used in various general-purpose amplification circuits where low noise and high reliability are required.
  • Industrial Control Systems: Suitable for use in industrial control systems that require reliable and low-noise transistor operation.

Q & A

  1. What is the maximum collector-emitter voltage for the MMBT5087LT1G?

    The maximum collector-emitter voltage (VCEO) is -50 Vdc.

  2. Is the MMBT5087LT1G AEC-Q101 qualified?
  3. What is the thermal resistance, junction-to-ambient (RθJA) for this transistor?

    The thermal resistance, junction-to-ambient (RθJA) is 417 °C/W.

  4. What is the DC current gain (hFE) range for the MMBT5087LT1G?

    The DC current gain (hFE) ranges from 250 to 800.

  5. What is the collector-emitter saturation voltage (VCE(sat)) for this transistor?

    The collector-emitter saturation voltage (VCE(sat)) is -0.3 Vdc.

  6. Is the MMBT5087LT1G Pb-free and RoHS compliant?
  7. What is the current-gain — bandwidth product (fT) for the MMBT5087LT1G?

    The current-gain — bandwidth product (fT) is 40 MHz.

  8. What is the output capacitance (Cobo) for this transistor?

    The output capacitance (Cobo) is 4.0 pF.

  9. In what package is the MMBT5087LT1G available?

    The MMBT5087LT1G is available in a SOT-23 (TO-236) package.

  10. What are some typical applications for the MMBT5087LT1G?

    Typical applications include automotive electronics, audio equipment, general-purpose amplification, and industrial control systems.

Product Attributes

Transistor Type:PNP
Current - Collector (Ic) (Max):50 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Vce Saturation (Max) @ Ib, Ic:300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:250 @ 100µA, 5V
Power - Max:300 mW
Frequency - Transition:40MHz
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.23
3,119

Please send RFQ , we will respond immediately.

Same Series
MMBT5087LT3G
MMBT5087LT3G
TRANS PNP 50V 0.05A SOT23-3
NSVMMBT5087LT1G
NSVMMBT5087LT1G
TRANS PNP 50V 0.05A SOT23-3
NSVMMBT5087LT3G
NSVMMBT5087LT3G
TRANS PNP 50V 0.05A SOT23-3
MMBT5087LT1
MMBT5087LT1
TRANS PNP 50V 50MA SOT23

Similar Products

Part Number MMBT5087LT1G MMBT5087LT3G MMBT5088LT1G MMBT5089LT1G MMBT5087LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Obsolete
Transistor Type PNP PNP NPN NPN -
Current - Collector (Ic) (Max) 50 mA 50 mA 50 mA 50 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 30 V 25 V -
Vce Saturation (Max) @ Ib, Ic 300mV @ 1mA, 10mA 300mV @ 1mA, 10mA 500mV @ 1mA, 10mA 500mV @ 1mA, 10mA -
Current - Collector Cutoff (Max) 50nA (ICBO) 50nA (ICBO) 50nA (ICBO) 50nA (ICBO) -
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100µA, 5V 250 @ 100µA, 5V 300 @ 100µA, 5V 400 @ 100µA, 5V -
Power - Max 300 mW 300 mW 300 mW 300 mW -
Frequency - Transition 40MHz 40MHz 50MHz 50MHz -
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

Related Product By Categories

PMBT5550,235
PMBT5550,235
Nexperia USA Inc.
TRANS NPN 140V 0.3A TO236AB
BC857BWE6327
BC857BWE6327
Infineon Technologies
BIPOLAR GEN PURPOSE TRANSISTOR
BC857AW_R1_00001
BC857AW_R1_00001
Panjit International Inc.
TRANS PNP 45V 0.1A SOT323
BDW93CTU
BDW93CTU
onsemi
TRANS NPN DARL 100V 12A TO220-3
MJF6388G
MJF6388G
onsemi
TRANS NPN DARL 100V 10A TO220FP
BC817K-25HVL
BC817K-25HVL
Nexperia USA Inc.
TRANS NPN 45V 0.5A TO236AB
BCP56-16HX
BCP56-16HX
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
PMBT2222A/DG,215
PMBT2222A/DG,215
NXP USA Inc.
SMALL SIGNAL BIPOLAR TRANSISTOR
BC857CQCZ
BC857CQCZ
Nexperia USA Inc.
TRANS PNP 45V 0.1A DFN1412D-3
TIP122TU
TIP122TU
Fairchild Semiconductor
TRANS NPN DARL 100V 5A TO220-3
BC817K16WH6327XTSA1
BC817K16WH6327XTSA1
Infineon Technologies
TRANS NPN 45V 0.5A SOT323
BUK9Y30-75B/C1,115
BUK9Y30-75B/C1,115
NXP USA Inc.
MOSFET N-CH LFPAK

Related Product By Brand

SZESD7461N2T5G
SZESD7461N2T5G
onsemi
TVS DIODE 16VWM 39VC 2XDFN
MBRAF440T3G
MBRAF440T3G
onsemi
DIODE SCHOTTKY 40V 4A SMA-FL
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
FGH40N60SFDTU
FGH40N60SFDTU
onsemi
IGBT FIELD STOP 600V 80A TO247-3
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
CAT24C512C8UTR
CAT24C512C8UTR
onsemi
IC EEPROM 512KBIT I2C 8WLCSP
FAN7385MX
FAN7385MX
onsemi
IC GATE DRVR HIGH-SIDE 14SOP
LV8711T-TLM-H
LV8711T-TLM-H
onsemi
IC MTR DRV BIPLR 2.7-5.5V 24SSOP
LM2903DR2GH
LM2903DR2GH
onsemi
FIXED POSITIVE LDO REGULATOR