Overview
The MMBT5089LT1G is a low-noise NPN silicon transistor produced by onsemi. This device is part of the MMBT5089L series and is packaged in a SOT-23 (TO-236) case. It is designed to meet the requirements of various applications, including automotive and other sectors that demand high reliability and unique site and control change requirements. The MMBT5089LT1G is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive standards. Additionally, it is Pb-free, halogen-free/BFR-free, and RoHS compliant, making it environmentally friendly.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | VCEO | 25 | Vdc |
| Collector-Base Voltage | VCBO | 30 | Vdc |
| Emitter-Base Voltage | VEBO | 4.5 | Vdc |
| Collector Current - Continuous | IC | 50 | mAdc |
| Total Device Dissipation (FR-5 Board, TA = 25°C) | PD | 225 | mW |
| Thermal Resistance, Junction-to-Ambient (FR-5 Board) | RJA | 556 | °C/W |
| Junction and Storage Temperature | TJ, Tstg | -55 to +150 | °C |
| DC Current Gain (IC = 100 μAdc, VCE = 5.0 Vdc) | hFE | 300 - 400 | - |
| Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VCE(sat) | 0.5 | Vdc |
| Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) | VBE(sat) | 0.8 | Vdc |
| Current-Gain — Bandwidth Product (IC = 500 μAdc, VCE = 5.0 Vdc, f = 20 MHz) | fT | 50 | MHz |
Key Features
- Low Noise Operation: Designed for low noise applications, making it suitable for sensitive electronic circuits.
- AEC-Q101 Qualified and PPAP Capable: Meets automotive standards for reliability and quality.
- Environmentally Friendly: Pb-free, halogen-free/BFR-free, and RoHS compliant.
- High DC Current Gain: Offers a high DC current gain (hFE) of 300 to 400 at IC = 100 μAdc and VCE = 5.0 Vdc.
- Low Saturation Voltages: Low VCE(sat) and VBE(sat) values ensure efficient operation.
- Wide Operating Temperature Range: Junction and storage temperature range from -55°C to +150°C.
Applications
- Automotive Electronics: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Audio and RF Amplifiers: Ideal for use in low noise audio and RF amplifier circuits.
- General Purpose Amplification: Can be used in a wide range of general-purpose amplification applications requiring low noise and high reliability.
- Industrial Control Systems: Applicable in industrial control systems where reliability and low noise are critical.
Q & A
- What is the collector-emitter voltage rating of the MMBT5089LT1G?
The collector-emitter voltage rating (VCEO) is 25 Vdc.
- Is the MMBT5089LT1G environmentally friendly?
- What is the DC current gain (hFE) of the MMBT5089LT1G?
The DC current gain (hFE) is between 300 to 400 at IC = 100 μAdc and VCE = 5.0 Vdc.
- What is the thermal resistance, junction-to-ambient (RJA) for the MMBT5089LT1G on an FR-5 board?
The thermal resistance, junction-to-ambient (RJA) is 556 °C/W.
- What is the operating temperature range for the MMBT5089LT1G?
The junction and storage temperature range is from -55°C to +150°C.
- Is the MMBT5089LT1G suitable for automotive applications?
- What is the collector-emitter saturation voltage (VCE(sat)) of the MMBT5089LT1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.5 Vdc.
- What is the base-emitter saturation voltage (VBE(sat)) of the MMBT5089LT1G?
The base-emitter saturation voltage (VBE(sat)) is 0.8 Vdc.
- What is the current-gain — bandwidth product (fT) of the MMBT5089LT1G?
The current-gain — bandwidth product (fT) is 50 MHz.
- In what package is the MMBT5089LT1G available?
The MMBT5089LT1G is available in a SOT-23 (TO-236) package.
