Overview
The NVMFS5C410NLWFT3G is a high-performance, single N-channel power MOSFET produced by onsemi. This device is designed for applications requiring high current handling and low on-resistance. It features a compact DFN5 (SO-8FL) package with wettable flanks, enhancing optical inspection and reliability. The MOSFET is AEC-Q101 qualified and PPAP capable, ensuring it meets stringent automotive standards. It is also Pb-free, halogen-free, and RoHS compliant, making it suitable for a wide range of applications.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 40 | V |
| Gate-to-Source Voltage | VGS | ±20 | V |
| Continuous Drain Current (TC = 25°C) | ID | 330 | A |
| Continuous Drain Current (TC = 100°C) | ID | 230 | A |
| Power Dissipation (TC = 25°C) | PD | 167 | W |
| Power Dissipation (TC = 100°C) | PD | 83 | W |
| Drain-to-Source On Resistance (VGS = 10 V, ID = 50 A) | RDS(on) | 0.65 - 0.82 | mΩ |
| Gate Threshold Voltage | VGS(TH) | 1.2 - 2.0 | V |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 to +175 | °C |
| Source Current (Body Diode) | IS | 169 | A |
| Single Pulse Drain-to-Source Avalanche Energy | EAS | 706 | mJ |
Key Features
- Compact Design: Small footprint (5x6 mm) in DFN5 (SO-8FL) package.
- Low On-Resistance: RDS(on) of 0.65 - 0.82 mΩ at VGS = 10 V, ID = 50 A.
- Low Driver Losses: Low QG and capacitance to minimize driver losses.
- Enhanced Optical Inspection: Wettable flanks option for improved optical inspection.
- AEC-Q101 Qualified and PPAP Capable: Meets stringent automotive standards.
- Environmental Compliance: Pb-free, halogen-free, and RoHS compliant.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification.
- Power Management: Ideal for power management in high-current applications such as DC-DC converters and motor control.
- Industrial Control: Used in industrial control systems requiring high reliability and low on-resistance.
- Consumer Electronics: Applicable in consumer electronics where compact design and high performance are necessary.
Q & A
- What is the maximum drain-to-source voltage of the NVMFS5C410NLWFT3G?
The maximum drain-to-source voltage is 40 V.
- What is the continuous drain current at TC = 25°C?
The continuous drain current at TC = 25°C is 330 A.
- What is the typical on-resistance of the MOSFET at VGS = 10 V and ID = 50 A?
The typical on-resistance is 0.65 - 0.82 mΩ.
- Is the NVMFS5C410NLWFT3G AEC-Q101 qualified?
Yes, it is AEC-Q101 qualified and PPAP capable.
- What is the operating junction and storage temperature range?
The operating junction and storage temperature range is -55 to +175 °C.
- What is the single pulse drain-to-source avalanche energy?
The single pulse drain-to-source avalanche energy is 706 mJ.
- Is the device Pb-free and RoHS compliant?
Yes, the device is Pb-free, halogen-free, and RoHS compliant.
- What package options are available for the NVMFS5C410NLWFT3G?
The device is available in DFN5 (SO-8FL) package with wettable flanks.
- What are the typical applications of the NVMFS5C410NLWFT3G?
Typical applications include automotive systems, power management, industrial control, and consumer electronics.
- What is the gate threshold voltage range?
The gate threshold voltage range is 1.2 - 2.0 V.
