Overview
The NTD3055L170T4 is a power MOSFET produced by onsemi, designed for low voltage, high speed switching applications. This N-Channel, logic level MOSFET is available in DPAK and IPAK packages and is suitable for a variety of applications including power supplies, converters, power motor controls, and bridge circuits. The device is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications. It is also lead-free, adhering to environmental standards.
Key Specifications
| Characteristic | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Drain-to-Gate Voltage (RGS = 10 MΩ) | VDGR | 60 | Vdc |
| Gate-to-Source Voltage - Continuous | VGS | ±15 | Vdc |
| Gate-to-Source Voltage - Non-repetitive (tp < 10 ms) | VGS | ±20 | Vdc |
| Continuous Drain Current @ TA = 25°C | ID | 9.0 | A |
| Static Drain-to-Source On-Resistance (VGS = 5.0 Vdc, ID = 4.5 A) | RDS(on) | 170 | mΩ |
| Gate Threshold Voltage (VDS = VGS, ID = 250 μAdc) | VGS(th) | 1.0 - 1.7 | Vdc |
| Turn-On Delay Time (VDD = 30 Vdc, ID = 9.0 A, VGS = 5.0 Vdc, RG = 9.1 Ω) | td(on) | 9.7 - 20 | ns |
| Turn-Off Delay Time (VDD = 30 Vdc, ID = 9.0 A, VGS = 5.0 Vdc, RG = 9.1 Ω) | td(off) | 10 - 20 | ns |
Key Features
- NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
- Pb-Free Devices, adhering to environmental standards.
- High Speed Switching Capability, suitable for low voltage applications.
- Logic Level Gate Drive, allowing for easy integration with microcontrollers and other logic-level devices.
- Low On-Resistance (RDS(on) = 170 mΩ), reducing power losses and improving efficiency.
- Fast Switching Times (td(on) = 9.7 - 20 ns, td(off) = 10 - 20 ns), enhancing performance in high-frequency applications.
Applications
- Power Supplies: Ideal for DC-DC converters and other power supply circuits.
- Converters: Suitable for various types of converters including buck, boost, and buck-boost converters.
- Power Motor Controls: Used in motor control circuits for efficient and reliable operation.
- Bridge Circuits: Applicable in half-bridge and full-bridge configurations for high-power switching.
Q & A
- What is the maximum drain-to-source voltage of the NTD3055L170T4 MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 Vdc.
- What is the continuous drain current rating of the NTD3055L170T4 at 25°C?
The continuous drain current (ID) is 9.0 A at 25°C.
- What is the typical on-resistance of the NTD3055L170T4?
The static drain-to-source on-resistance (RDS(on)) is typically 170 mΩ when VGS = 5.0 Vdc and ID = 4.5 A.
- Is the NTD3055L170T4 suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
- What are the typical applications of the NTD3055L170T4 MOSFET?
Typical applications include power supplies, converters, power motor controls, and bridge circuits.
- What is the gate threshold voltage range of the NTD3055L170T4?
The gate threshold voltage (VGS(th)) ranges from 1.0 to 1.7 Vdc.
- What are the turn-on and turn-off delay times of the NTD3055L170T4?
The turn-on delay time (td(on)) is 9.7 - 20 ns, and the turn-off delay time (td(off)) is 10 - 20 ns.
- Is the NTD3055L170T4 lead-free?
Yes, the NTD3055L170T4 is a Pb-Free device.
- What are the package options available for the NTD3055L170T4?
The device is available in DPAK and IPAK packages.
- What is the maximum junction temperature for the NTD3055L170T4?
The maximum junction temperature (TJ) is 150°C.
