Overview
The NTD3055L170T4G is a high-performance, N-Channel, logic-level power MOSFET produced by onsemi. This device is designed for low voltage, high-speed switching applications, making it suitable for use in power supplies, converters, power motor controls, and bridge circuits. The MOSFET is available in DPAK and IPAK packages, both of which are Pb-free and compliant with automotive and other stringent application requirements, as indicated by the AEC-Q101 qualification and PPAP capability.
Key Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 60 | Vdc |
| Drain-to-Gate Voltage | VDGR | 60 | Vdc |
| Gate-to-Source Voltage (Continuous/Non-repetitive) | VGS | ±15 / ±20 | Vdc |
| Continuous Drain Current at TA = 25°C / 100°C | ID | 9.0 / 3.0 | A |
| Single Pulse Drain Current | IDM | 27 | A |
| Total Power Dissipation at TA = 25°C | PD | 28.5 | W |
| Operating and Storage Temperature Range | TJ, Tstg | −55 to 175 | °C |
| Static Drain-to-Source On-Resistance | RDS(on) | 170 | mΩ |
| Thermal Resistance (Junction-to-Case / Junction-to-Ambient) | RθJC / RθJA | 5.2 / 71.4 | °C/W |
Key Features
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Low On-Resistance: RDS(on) of 170 mΩ, ensuring efficient switching and minimal power loss.
- High Speed Switching: Designed for high-speed switching applications with fast turn-on and turn-off times.
- High Current Capability: Continuous drain current of 9.0 A and single pulse drain current of 27 A.
- Wide Operating Temperature Range: Operates from −55°C to 175°C, making it versatile for various environments.
- Pb-Free Packages: Available in DPAK and IPAK packages, both of which are lead-free.
Applications
- Power Supplies: Ideal for use in DC-DC converters and other power supply applications.
- Converters: Suitable for various types of converters, including buck, boost, and flyback converters.
- Power Motor Controls: Used in motor control circuits for efficient and reliable operation.
- Bridge Circuits: Applicable in half-bridge and full-bridge configurations for high-power switching.
Q & A
- What is the maximum drain-to-source voltage of the NTD3055L170T4G MOSFET?
The maximum drain-to-source voltage (VDSS) is 60 Vdc.
- What is the continuous drain current rating at 25°C?
The continuous drain current (ID) at 25°C is 9.0 A.
- What is the static drain-to-source on-resistance of this MOSFET?
The static drain-to-source on-resistance (RDS(on)) is 170 mΩ.
- Is the NTD3055L170T4G MOSFET AEC-Q101 qualified?
- What are the typical applications of the NTD3055L170T4G MOSFET?
Typical applications include power supplies, converters, power motor controls, and bridge circuits.
- What is the operating temperature range of this MOSFET?
The operating temperature range is from −55°C to 175°C.
- What are the package options available for the NTD3055L170T4G?
The MOSFET is available in DPAK and IPAK packages, both of which are Pb-free.
- What is the maximum lead temperature for soldering purposes?
The maximum lead temperature for soldering purposes is 260°C for 1/8″ from the case for 10 seconds.
- How does the thermal resistance of the MOSFET vary?
The thermal resistance (RθJC) is 5.2°C/W for junction-to-case and 71.4°C/W for junction-to-ambient.
- What is the single pulse drain-to-source avalanche energy rating?
The single pulse drain-to-source avalanche energy (EAS) is 30 mJ.
