Overview
The STW6N120K3 is a high-performance N-channel Power MOSFET from STMicroelectronics, leveraging the advanced SuperMESH3™ technology. This device is designed to offer superior dynamic performance, extremely low on-resistance, and high avalanche capability, making it suitable for the most demanding applications. Available in the TO-247 package, it combines an optimized vertical structure with enhanced electrical characteristics to ensure reliable and efficient operation.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (VBRDSS) | 1200 | V |
| Static Drain-Source On-Resistance (RDS(on)) | < 2.4 Ω (typ. 1.95 Ω) | Ω |
| Continuous Drain Current (ID) at TC = 25 °C | 6 | A |
| Continuous Drain Current (ID) at TC = 100 °C | 3.8 | A |
| Pulsed Drain Current (IDM) | 20 | A |
| Power Dissipation (PTOT) at TC = 25 °C | 150 | W |
| Gate-Source Voltage (VGS) | ± 30 | V |
| Gate Threshold Voltage (VGS(th)) | 3 - 5 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 0.83 | °C/W |
| Maximum Junction Temperature (TJ) | 150 | °C |
Key Features
- 100% avalanche tested with extremely large avalanche performance
- Minimized gate charge for efficient switching
- Very low intrinsic capacitances
- Zener-protected gate to enhance ESD capability and protect against voltage transients
- Highly optimized vertical structure for superior dynamic performance
Applications
The STW6N120K3 is ideal for various switching applications, including but not limited to:
- Power supplies and converters
- Motor control and drives
- High-frequency switching circuits
- Aerospace and automotive systems requiring high reliability and performance
Q & A
- What is the maximum drain-source breakdown voltage of the STW6N120K3?
The maximum drain-source breakdown voltage (VBRDSS) is 1200 V.
- What is the typical static drain-source on-resistance (RDS(on)) of the STW6N120K3?
The typical static drain-source on-resistance (RDS(on)) is 1.95 Ω.
- What is the maximum continuous drain current (ID) at TC = 25 °C?
The maximum continuous drain current (ID) at TC = 25 °C is 6 A.
- What is the power dissipation (PTOT) at TC = 25 °C for the STW6N120K3?
The power dissipation (PTOT) at TC = 25 °C is 150 W.
- What is the gate-source voltage (VGS) range for the STW6N120K3?
The gate-source voltage (VGS) range is ± 30 V.
- What is the thermal resistance junction-case (Rthj-case) for the TO-247 package?
The thermal resistance junction-case (Rthj-case) for the TO-247 package is 0.83 °C/W.
- Does the STW6N120K3 have built-in protection against voltage transients?
Yes, the STW6N120K3 has built-in back-to-back Zener diodes to protect against voltage transients and enhance ESD capability.
- What are the typical applications for the STW6N120K3?
The STW6N120K3 is typically used in switching applications such as power supplies, motor control, high-frequency switching circuits, and in aerospace and automotive systems.
- What is the maximum junction temperature (TJ) for the STW6N120K3?
The maximum junction temperature (TJ) is 150 °C.
- Is the STW6N120K3 100% avalanche tested?
Yes, the STW6N120K3 is 100% avalanche tested.
