NTD4909NT4G
  • Share:

onsemi NTD4909NT4G

Manufacturer No:
NTD4909NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 8.8A/41A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD4904N is a high-performance, single N-Channel power MOSFET from onsemi, designed for a variety of power management applications. This device is available in both DPAK and IPAK packages, ensuring flexibility in design and implementation. With its low RDS(on) and optimized gate charge, the NTD4904N minimizes conduction and switching losses, making it an ideal choice for efficient power delivery systems.

Key Specifications

Parameter Symbol Value Unit
Drain-to-Source Voltage VDSS 30 V
Gate-to-Source Voltage VGS ±20 V
Continuous Drain Current (RJA) at TA = 25°C ID 17.8 A
Continuous Drain Current (RJC) at TC = 25°C ID 79 A
Power Dissipation (RJA) at TA = 25°C PD 2.6 W
Pulsed Drain Current (tp=10μs) at TA = 25°C IDM 316 A
Operating Junction and Storage Temperature TJ, Tstg -55 to 175 °C
Drain-to-Source On Resistance (RDS(on)) at VGS = 10V, ID = 30A RDS(on) 3.0 - 3.7
Gate Threshold Voltage VGS(TH) 1.0 - 2.2 V

Key Features

  • Low RDS(on) to minimize conduction losses
  • Low capacitance to minimize driver losses
  • Optimized gate charge to minimize switching losses
  • Pb-Free devices, compliant with environmental regulations
  • High current capability with a maximum drain current of 79A
  • Wide operating junction temperature range from -55°C to 175°C

Applications

  • CPU Power Delivery
  • DC-DC Converters
  • Power Management Systems
  • High-Current Switching Applications

Q & A

  1. What is the maximum drain-to-source voltage of the NTD4904N?

    The maximum drain-to-source voltage (VDSS) is 30V.

  2. What are the package options available for the NTD4904N?

    The NTD4904N is available in both DPAK and IPAK packages.

  3. What is the maximum continuous drain current at 25°C?

    The maximum continuous drain current (ID) at 25°C is 17.8A for RJA and 79A for RJC.

  4. What is the typical on-resistance (RDS(on)) at VGS = 10V and ID = 30A?

    The typical on-resistance (RDS(on)) is 3.0 - 3.7 mΩ.

  5. What is the operating junction temperature range?

    The operating junction temperature range is -55°C to 175°C.

  6. What are some common applications for the NTD4904N?

    Common applications include CPU power delivery, DC-DC converters, and high-current switching applications.

  7. Is the NTD4904N Pb-Free?
  8. What is the maximum pulsed drain current?

    The maximum pulsed drain current (IDM) is 316A.

  9. What is the gate threshold voltage range?

    The gate threshold voltage (VGS(TH)) range is 1.0 - 2.2V.

  10. What is the typical forward diode voltage at IS = 30A and TJ = 25°C?

    The typical forward diode voltage (VSD) is 0.84 - 1.1V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1314 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.37W (Ta), 29.4W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
33

Please send RFQ , we will respond immediately.

Same Series
NTD4909N-35G
NTD4909N-35G
MOSFET N-CH 30V 8.8A/41A IPAK
NTD4909N-1G
NTD4909N-1G
MOSFET N-CH 30V 8.8A/41A IPAK

Similar Products

Part Number NTD4909NT4G NTD4909NT4H NTD4959NT4G NTD4979NT4G NTD4969NT4G NTD4809NT4G NTD4904NT4G NTD4905NT4G NTD4906NT4G NTD4909NAT4G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Obsolete Active Obsolete Obsolete Obsolete Obsolete Obsolete
FET Type N-Channel - N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V - 30 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta), 41A (Tc) - 9A (Ta), 58A (Tc) 9.4A (Ta), 41A (Tc) 9.4A (Ta), 41A (Tc) 9.6A (Ta), 58A (Tc) 13A (Ta), 79A (Tc) 12A (Ta), 67A (Tc) 10.3A (Ta), 54A (Tc) 8.8A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V -
Rds On (Max) @ Id, Vgs 8mOhm @ 30A, 10V - 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V 3.7mOhm @ 30A, 10V 4.5mOhm @ 30A, 10V 5.5mOhm @ 30A, 10V 8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA - 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.5 nC @ 10 V - 25 nC @ 11.5 V 16.5 nC @ 10 V 9 nC @ 4.5 V 25 nC @ 11.5 V 41 nC @ 10 V 33 nC @ 10 V 24 nC @ 10 V 17.5 nC @ 10 V
Vgs (Max) ±20V - ±20V ±20V ±20V ±20V ±20V ±20V ±20V -
Input Capacitance (Ciss) (Max) @ Vds 1314 pF @ 15 V - 1456 pF @ 12 V 837 pF @ 15 V 837 pF @ 15 V 1456 pF @ 12 V 3052 pF @ 15 V 2340 pF @ 15 V 1932 pF @ 15 V 1314 pF @ 15 V
FET Feature - - - - - - - - - -
Power Dissipation (Max) 1.37W (Ta), 29.4W (Tc) - 1.3W (Ta), 52W (Tc) 1.38W (Ta), 26.3W (Tc) 1.38W (Ta), 26.3W (Tc) 1.4W (Ta), 52W (Tc) 1.4W (Ta), 52W (Tc) 1.4W (Ta), 44W (Tc) 1.38W (Ta), 37.5W (Tc) -
Operating Temperature -55°C ~ 175°C (TJ) - -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -
Mounting Type Surface Mount - Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK - DPAK DPAK DPAK DPAK DPAK DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 - TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

SCTWA30N120
SCTWA30N120
STMicroelectronics
IC POWER MOSFET 1200V HIP247
PHD71NQ03LT,118
PHD71NQ03LT,118
NXP USA Inc.
TRANSISTOR >30MHZ
FQT7N10LTF
FQT7N10LTF
onsemi
MOSFET N-CH 100V 1.7A SOT223-4
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
STD5N80K5
STD5N80K5
STMicroelectronics
MOSFET N-CH 800V 4A DPAK
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
STF13N65M2
STF13N65M2
STMicroelectronics
MOSFET N-CH 650V 10A TO220FP
STW45N60DM2AG
STW45N60DM2AG
STMicroelectronics
MOSFET N-CH 600V 34A TO247
BBS3002-TL-1E
BBS3002-TL-1E
onsemi
MOSFET P-CH 60V 100A D2PAK
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

MMBT4401LT1G
MMBT4401LT1G
onsemi
TRANS NPN 40V 0.6A SOT23-3
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
NB3N551MNR4G
NB3N551MNR4G
onsemi
IC CLK BUFFER 1:4 180MHZ 8DFN
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
NCS20072DR2G
NCS20072DR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
MC74VHC04DTR2G
MC74VHC04DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5
MC33375D-3.0
MC33375D-3.0
onsemi
IC REG LINEAR 3V 300MA 8SOIC