NTD4969NT4G
  • Share:

onsemi NTD4969NT4G

Manufacturer No:
NTD4969NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 9.4A/41A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD4969NT4G is a high-performance Power MOSFET manufactured by ON Semiconductor. This device is designed for high-current applications, particularly in CPU power delivery and other power-intensive systems. It features a single N-channel configuration and is packaged in a DPAK/IPAK form factor, which provides excellent thermal performance and ease of use in various electronic designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)41 A
RDS(ON) (On-Resistance)Typically 2.5 mΩ at VGS = 10 V
VGS(th) (Threshold Voltage)Typically 2.5 V
PackageDPAK/IPAK

Key Features

  • High current capability of up to 41 A, making it suitable for high-power applications.
  • Low on-resistance (RDS(ON)) of typically 2.5 mΩ, which minimizes power losses.
  • Single N-channel configuration for simplicity and reliability.
  • DPAK/IPAK package for good thermal dissipation and compact design.
  • High threshold voltage (VGS(th)) for stable operation.

Applications

  • CPU power delivery systems where high current and low resistance are critical.
  • Power supplies and DC-DC converters requiring high efficiency and reliability.
  • Motor control and drive systems that demand high current handling.
  • Other high-power electronic devices and systems.

Q & A

  1. What is the maximum drain-source voltage of the NTD4969NT4G?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current rating of the NTD4969NT4G?
    The continuous drain current (ID) is 41 A.
  3. What is the typical on-resistance of the NTD4969NT4G?
    The typical on-resistance (RDS(ON)) is 2.5 mΩ at VGS = 10 V.
  4. What is the package type of the NTD4969NT4G?
    The package type is DPAK/IPAK.
  5. What are the typical applications of the NTD4969NT4G?
    Typical applications include CPU power delivery, power supplies, DC-DC converters, motor control, and other high-power electronic devices.
  6. What is the threshold voltage of the NTD4969NT4G?
    The threshold voltage (VGS(th)) is typically 2.5 V.
  7. Why is the NTD4969NT4G suitable for high-power applications?
    It is suitable due to its high current capability, low on-resistance, and robust thermal performance.
  8. Where can I find detailed specifications for the NTD4969NT4G?
    Detailed specifications can be found in the datasheet available on the ON Semiconductor website or through distributors like Digi-Key and Mouser.
  9. What are the benefits of using the DPAK/IPAK package?
    The benefits include good thermal dissipation and a compact design, making it ideal for space-constrained applications.
  10. Is the NTD4969NT4G suitable for motor control systems?
    Yes, it is suitable due to its high current handling and low on-resistance, which are critical for efficient motor control.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:837 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.38W (Ta), 26.3W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
205

Please send RFQ , we will respond immediately.

Same Series
NTD4969N-35G
NTD4969N-35G
MOSFET N-CH 30V 9.4A/41A IPAK

Similar Products

Part Number NTD4969NT4G NTD4979NT4G NTD4909NT4G NTD4959NT4G NTD4960NT4G NTD4963NT4G NTD4965NT4G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 41A (Tc) 9.4A (Ta), 41A (Tc) 8.8A (Ta), 41A (Tc) 9A (Ta), 58A (Tc) 8.9A (Ta), 55A (Tc) 8.1A (Ta), 44A (Tc) 13A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9.6mOhm @ 30A, 10V 4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V 16.5 nC @ 10 V 17.5 nC @ 10 V 25 nC @ 11.5 V 22 nC @ 10 V 16.2 nC @ 10 V 17.2 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 837 pF @ 15 V 837 pF @ 15 V 1314 pF @ 15 V 1456 pF @ 12 V 1300 pF @ 15 V 1035 pF @ 12 V 1710 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 1.38W (Ta), 26.3W (Tc) 1.38W (Ta), 26.3W (Tc) 1.37W (Ta), 29.4W (Tc) 1.3W (Ta), 52W (Tc) 1.07W (Ta), 35.71W (Tc) 1.1W (Ta), 35.7W (Tc) 1.39W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
STP5NK60Z
STP5NK60Z
STMicroelectronics
MOSFET N-CH 600V 5A TO220AB
IRFB3607PBF
IRFB3607PBF
Infineon Technologies
MOSFET N-CH 75V 80A TO220AB
BSS138PW,115
BSS138PW,115
Nexperia USA Inc.
MOSFET N-CH 60V 320MA SOT323
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
FQD4P40TM
FQD4P40TM
onsemi
MOSFET P-CH 400V 2.7A DPAK
NTMFS4C03NT1G
NTMFS4C03NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
STH315N10F7-6
STH315N10F7-6
STMicroelectronics
MOSFET N-CH 100V 180A H2PAK-6
STB30N65M5
STB30N65M5
STMicroelectronics
MOSFET N-CH 650V 22A D2PAK
NTMFS4C028NT1G
NTMFS4C028NT1G
onsemi
MOSFET N-CH 30V 16.4A/52A 5DFN
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220

Related Product By Brand

MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
MMSZ5267BT1G
MMSZ5267BT1G
onsemi
DIODE ZENER 75V 500MW SOD123
1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
BC81740MTF
BC81740MTF
onsemi
TRANS NPN 45V 0.8A SOT23-3
FDG6332C
FDG6332C
onsemi
MOSFET N/P-CH 20V SC70-6
EMI4183MTTAG
EMI4183MTTAG
onsemi
CMC 100MA 6LN SMD ESD
NCV7344AMW3R2G
NCV7344AMW3R2G
onsemi
IC TRANSCEIVER HALF 1/1 8DFNW
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
LB11660FV-TLM-H
LB11660FV-TLM-H
onsemi
IC MOTOR DRIVER 4V-15V 16SSOP
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223