NTD4969NT4G
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onsemi NTD4969NT4G

Manufacturer No:
NTD4969NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 9.4A/41A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD4969NT4G is a high-performance Power MOSFET manufactured by ON Semiconductor. This device is designed for high-current applications, particularly in CPU power delivery and other power-intensive systems. It features a single N-channel configuration and is packaged in a DPAK/IPAK form factor, which provides excellent thermal performance and ease of use in various electronic designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)41 A
RDS(ON) (On-Resistance)Typically 2.5 mΩ at VGS = 10 V
VGS(th) (Threshold Voltage)Typically 2.5 V
PackageDPAK/IPAK

Key Features

  • High current capability of up to 41 A, making it suitable for high-power applications.
  • Low on-resistance (RDS(ON)) of typically 2.5 mΩ, which minimizes power losses.
  • Single N-channel configuration for simplicity and reliability.
  • DPAK/IPAK package for good thermal dissipation and compact design.
  • High threshold voltage (VGS(th)) for stable operation.

Applications

  • CPU power delivery systems where high current and low resistance are critical.
  • Power supplies and DC-DC converters requiring high efficiency and reliability.
  • Motor control and drive systems that demand high current handling.
  • Other high-power electronic devices and systems.

Q & A

  1. What is the maximum drain-source voltage of the NTD4969NT4G?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current rating of the NTD4969NT4G?
    The continuous drain current (ID) is 41 A.
  3. What is the typical on-resistance of the NTD4969NT4G?
    The typical on-resistance (RDS(ON)) is 2.5 mΩ at VGS = 10 V.
  4. What is the package type of the NTD4969NT4G?
    The package type is DPAK/IPAK.
  5. What are the typical applications of the NTD4969NT4G?
    Typical applications include CPU power delivery, power supplies, DC-DC converters, motor control, and other high-power electronic devices.
  6. What is the threshold voltage of the NTD4969NT4G?
    The threshold voltage (VGS(th)) is typically 2.5 V.
  7. Why is the NTD4969NT4G suitable for high-power applications?
    It is suitable due to its high current capability, low on-resistance, and robust thermal performance.
  8. Where can I find detailed specifications for the NTD4969NT4G?
    Detailed specifications can be found in the datasheet available on the ON Semiconductor website or through distributors like Digi-Key and Mouser.
  9. What are the benefits of using the DPAK/IPAK package?
    The benefits include good thermal dissipation and a compact design, making it ideal for space-constrained applications.
  10. Is the NTD4969NT4G suitable for motor control systems?
    Yes, it is suitable due to its high current handling and low on-resistance, which are critical for efficient motor control.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:837 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.38W (Ta), 26.3W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Same Series
NTD4969N-35G
NTD4969N-35G
MOSFET N-CH 30V 9.4A/41A IPAK

Similar Products

Part Number NTD4969NT4G NTD4979NT4G NTD4909NT4G NTD4959NT4G NTD4960NT4G NTD4963NT4G NTD4965NT4G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 41A (Tc) 9.4A (Ta), 41A (Tc) 8.8A (Ta), 41A (Tc) 9A (Ta), 58A (Tc) 8.9A (Ta), 55A (Tc) 8.1A (Ta), 44A (Tc) 13A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9.6mOhm @ 30A, 10V 4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V 16.5 nC @ 10 V 17.5 nC @ 10 V 25 nC @ 11.5 V 22 nC @ 10 V 16.2 nC @ 10 V 17.2 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 837 pF @ 15 V 837 pF @ 15 V 1314 pF @ 15 V 1456 pF @ 12 V 1300 pF @ 15 V 1035 pF @ 12 V 1710 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 1.38W (Ta), 26.3W (Tc) 1.38W (Ta), 26.3W (Tc) 1.37W (Ta), 29.4W (Tc) 1.3W (Ta), 52W (Tc) 1.07W (Ta), 35.71W (Tc) 1.1W (Ta), 35.7W (Tc) 1.39W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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