NTD4969NT4G
  • Share:

onsemi NTD4969NT4G

Manufacturer No:
NTD4969NT4G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 30V 9.4A/41A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The NTD4969NT4G is a high-performance Power MOSFET manufactured by ON Semiconductor. This device is designed for high-current applications, particularly in CPU power delivery and other power-intensive systems. It features a single N-channel configuration and is packaged in a DPAK/IPAK form factor, which provides excellent thermal performance and ease of use in various electronic designs.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)30 V
ID (Continuous Drain Current)41 A
RDS(ON) (On-Resistance)Typically 2.5 mΩ at VGS = 10 V
VGS(th) (Threshold Voltage)Typically 2.5 V
PackageDPAK/IPAK

Key Features

  • High current capability of up to 41 A, making it suitable for high-power applications.
  • Low on-resistance (RDS(ON)) of typically 2.5 mΩ, which minimizes power losses.
  • Single N-channel configuration for simplicity and reliability.
  • DPAK/IPAK package for good thermal dissipation and compact design.
  • High threshold voltage (VGS(th)) for stable operation.

Applications

  • CPU power delivery systems where high current and low resistance are critical.
  • Power supplies and DC-DC converters requiring high efficiency and reliability.
  • Motor control and drive systems that demand high current handling.
  • Other high-power electronic devices and systems.

Q & A

  1. What is the maximum drain-source voltage of the NTD4969NT4G?
    The maximum drain-source voltage (VDS) is 30 V.
  2. What is the continuous drain current rating of the NTD4969NT4G?
    The continuous drain current (ID) is 41 A.
  3. What is the typical on-resistance of the NTD4969NT4G?
    The typical on-resistance (RDS(ON)) is 2.5 mΩ at VGS = 10 V.
  4. What is the package type of the NTD4969NT4G?
    The package type is DPAK/IPAK.
  5. What are the typical applications of the NTD4969NT4G?
    Typical applications include CPU power delivery, power supplies, DC-DC converters, motor control, and other high-power electronic devices.
  6. What is the threshold voltage of the NTD4969NT4G?
    The threshold voltage (VGS(th)) is typically 2.5 V.
  7. Why is the NTD4969NT4G suitable for high-power applications?
    It is suitable due to its high current capability, low on-resistance, and robust thermal performance.
  8. Where can I find detailed specifications for the NTD4969NT4G?
    Detailed specifications can be found in the datasheet available on the ON Semiconductor website or through distributors like Digi-Key and Mouser.
  9. What are the benefits of using the DPAK/IPAK package?
    The benefits include good thermal dissipation and a compact design, making it ideal for space-constrained applications.
  10. Is the NTD4969NT4G suitable for motor control systems?
    Yes, it is suitable due to its high current handling and low on-resistance, which are critical for efficient motor control.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:9 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:837 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.38W (Ta), 26.3W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
205

Please send RFQ , we will respond immediately.

Same Series
NTD4969N-35G
NTD4969N-35G
MOSFET N-CH 30V 9.4A/41A IPAK

Similar Products

Part Number NTD4969NT4G NTD4979NT4G NTD4909NT4G NTD4959NT4G NTD4960NT4G NTD4963NT4G NTD4965NT4G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Obsolete Active Obsolete Obsolete Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta), 41A (Tc) 9.4A (Ta), 41A (Tc) 8.8A (Ta), 41A (Tc) 9A (Ta), 58A (Tc) 8.9A (Ta), 55A (Tc) 8.1A (Ta), 44A (Tc) 13A (Ta), 68A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 11.5V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V 9mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9mOhm @ 30A, 10V 8mOhm @ 30A, 10V 9.6mOhm @ 30A, 10V 4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA 2.2V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 9 nC @ 4.5 V 16.5 nC @ 10 V 17.5 nC @ 10 V 25 nC @ 11.5 V 22 nC @ 10 V 16.2 nC @ 10 V 17.2 nC @ 4.5 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 837 pF @ 15 V 837 pF @ 15 V 1314 pF @ 15 V 1456 pF @ 12 V 1300 pF @ 15 V 1035 pF @ 12 V 1710 pF @ 15 V
FET Feature - - - - - - -
Power Dissipation (Max) 1.38W (Ta), 26.3W (Tc) 1.38W (Ta), 26.3W (Tc) 1.37W (Ta), 29.4W (Tc) 1.3W (Ta), 52W (Tc) 1.07W (Ta), 35.71W (Tc) 1.1W (Ta), 35.7W (Tc) 1.39W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK DPAK DPAK DPAK DPAK-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

STD80N10F7
STD80N10F7
STMicroelectronics
MOSFET N-CH 100V 70A DPAK
STD10NM60N
STD10NM60N
STMicroelectronics
MOSFET N-CH 600V 10A DPAK
CSD18534Q5AT
CSD18534Q5AT
Texas Instruments
MOSFET N-CHANNEL 60V 50A 8VSON
CSD19536KTTT
CSD19536KTTT
Texas Instruments
MOSFET N-CH 100V 200A DDPAK
STQ1HNK60R-AP
STQ1HNK60R-AP
STMicroelectronics
MOSFET N-CH 600V 400MA TO92-3
STP45N10F7
STP45N10F7
STMicroelectronics
MOSFET N-CH 100V 45A TO220
FDMC4435BZ-F127-L701
FDMC4435BZ-F127-L701
onsemi
SINGLE ST3 P Z MLP3.3X3.3
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
NTTFS4939NTAG
NTTFS4939NTAG
onsemi
MOSFET N-CH 30V 8.9A/52A 8WDFN
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP
FDB075N15A_SN00284
FDB075N15A_SN00284
onsemi
MOSFET N-CH 150V 130A D2PAK
2N7002E-7-G
2N7002E-7-G
Diodes Incorporated
MOSFET N-CH 60V SOT23

Related Product By Brand

2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
MJE5731AG
MJE5731AG
onsemi
TRANS PNP 375V 1A TO220
MMBT2484LT3G
MMBT2484LT3G
onsemi
TRANS NPN 60V 0.1A SOT23-3
FDG6306P
FDG6306P
onsemi
MOSFET 2P-CH 20V 600MA SC88
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC74HC32ADTEL
MC74HC32ADTEL
onsemi
IC GATE OR 4CH 2-INP 14TSSOP
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
MC33025DWR2
MC33025DWR2
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCP3232NMNTXG
NCP3232NMNTXG
onsemi
IC REG BUCK ADJUSTABLE 15A 40QFN
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN