FDB075N15A_SN00284
  • Share:

onsemi FDB075N15A_SN00284

Manufacturer No:
FDB075N15A_SN00284
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 130A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB075N15A_SN00284 is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH technology. This device is designed to minimize on-state resistance while maintaining superior switching performance. It is available in TO-220 and D2PAK-3 (TO-263, 3-lead) packages, making it versatile for various high-power applications.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 150 V
Gate to Source Voltage (VGSS) ±20 (DC), ±30 (AC, f > 1 Hz) V
Drain Current (ID) - Continuous (TC = 25°C) 130 A (Package limitation: 120 A) A
Drain Current (ID) - Continuous (TC = 100°C) 92 A A
Drain Current (IDM) - Pulsed 522 A A
Static Drain to Source On Resistance (RDS(on)) 6.25 mΩ (Typ.) @ VGS = 10 V, ID = 100 A mΩ
Gate Threshold Voltage (VGS(th)) 2.0 - 4.0 V V
Power Dissipation (PD) at TC = 25°C 333 W W
Operating and Storage Temperature Range -55 to +175 °C °C

Key Features

  • High Performance Trench Technology for Extremely Low RDS(on)
  • Fast Switching and Low Gate Charge
  • High Power and Current Handling Capability
  • RoHS Compliant
  • Advanced POWERTRENCH process to minimize on-state resistance while maintaining superior switching performance

Applications

  • Synchronous Rectification for ATX / Server / Telecom PSU
  • Battery Protection Circuit
  • Motor Drives and Uninterruptible Power Supplies
  • Micro Solar Inverter

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FDB075N15A?

    The maximum drain to source voltage (VDSS) is 150 V.

  2. What is the typical on-state resistance (RDS(on)) of the FDB075N15A?

    The typical on-state resistance (RDS(on)) is 6.25 mΩ at VGS = 10 V and ID = 100 A.

  3. What are the package options for the FDB075N15A?

    The device is available in TO-220 and D2PAK-3 (TO-263, 3-lead) packages.

  4. What is the maximum continuous drain current (ID) at TC = 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 130 A, with a package limitation of 120 A.

  5. Is the FDB075N15A RoHS compliant?

    Yes, the FDB075N15A is RoHS compliant.

  6. What are some typical applications of the FDB075N15A?

    Typical applications include synchronous rectification for ATX / Server / Telecom PSU, battery protection circuits, motor drives, uninterruptible power supplies, and micro solar inverters.

  7. What is the operating and storage temperature range for the FDB075N15A?

    The operating and storage temperature range is -55 to +175 °C.

  8. What is the maximum power dissipation (PD) at TC = 25°C?

    The maximum power dissipation (PD) at TC = 25°C is 333 W.

  9. How does the POWERTRENCH technology benefit the FDB075N15A?

    The POWERTRENCH technology minimizes on-state resistance while maintaining superior switching performance.

  10. What is the gate threshold voltage (VGS(th)) range for the FDB075N15A?

    The gate threshold voltage (VGS(th)) range is 2.0 to 4.0 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7350 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):333W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
211

Please send RFQ , we will respond immediately.

Same Series
DD26M2S5WT2Z
DD26M2S5WT2Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20LV50/AA
DD15S20LV50/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S2S5WV5X
DD15S2S5WV5X
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20LV5Z
DD26M20LV5Z
CONN D-SUB HD PLUG 26P SLDR CUP
DD26M2S5WV5X
DD26M2S5WV5X
CONN D-SUB HD PLUG 26P SLDR CUP
DD15S20Z00/AA
DD15S20Z00/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S20W0S/AA
DD15S20W0S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HT0/AA
DD26M20HT0/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC9W4S10HTS/AA
CBC9W4S10HTS/AA
CONN D-SUB RCPT 9POS CRIMP
CBC9W4S10HT2S/AA
CBC9W4S10HT2S/AA
CONN D-SUB RCPT 9POS CRIMP
DD26S200TX
DD26S200TX
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50T0
DD26S2S50T0
CONN D-SUB HD RCPT 26P SLDR CUP

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
STP80NF70
STP80NF70
STMicroelectronics
MOSFET N-CH 68V 98A TO220AB
STF4N80K5
STF4N80K5
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
STN1NK80Z
STN1NK80Z
STMicroelectronics
MOSFET N-CH 800V 250MA SOT223
CSD17581Q5AT
CSD17581Q5AT
Texas Instruments
MOSFET N-CH 30V 24A/123A 8VSON
STD7ANM60N
STD7ANM60N
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
STD5NM60T4
STD5NM60T4
STMicroelectronics
MOSFET N-CH 600V 5A DPAK
FDD9507L-F085
FDD9507L-F085
onsemi
MOSFET P-CH 40V 100A DPAK
MTB30P06VT4G
MTB30P06VT4G
onsemi
MOSFET P-CH 60V 30A D2PAK
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
BSS138-F169
BSS138-F169
onsemi
MOSFET N-CH SOT23

Related Product By Brand

ESD9D5.0ST5G
ESD9D5.0ST5G
onsemi
TVS DIODE 5VWM 13.5VC SOD923
NRVBS240LT3G
NRVBS240LT3G
onsemi
DIODE SCHOTTKY 40V 2A SMB
MBRS140T3H
MBRS140T3H
onsemi
DIODE SCHOTTKY
MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
SZ1SMA5924BT3G
SZ1SMA5924BT3G
onsemi
DIODE ZENER 9.1V 1.5W SMA
NTB6413ANG
NTB6413ANG
onsemi
MOSFET N-CH 100V 42A D2PAK
BMS3004-1EX
BMS3004-1EX
onsemi
MOSFET P-CH TO220-3
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NCS29001DR2G
NCS29001DR2G
onsemi
IC LED DRIVER CTRLR PWM 14SOIC
NCP380LSN05AAT1G
NCP380LSN05AAT1G
onsemi
IC PWR SWITCH P-CHAN 1:1 5TSOP
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK