FDB075N15A_SN00284
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onsemi FDB075N15A_SN00284

Manufacturer No:
FDB075N15A_SN00284
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 150V 130A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDB075N15A_SN00284 is an N-Channel MOSFET produced by onsemi, utilizing their advanced POWERTRENCH technology. This device is designed to minimize on-state resistance while maintaining superior switching performance. It is available in TO-220 and D2PAK-3 (TO-263, 3-lead) packages, making it versatile for various high-power applications.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (VDSS) 150 V
Gate to Source Voltage (VGSS) ±20 (DC), ±30 (AC, f > 1 Hz) V
Drain Current (ID) - Continuous (TC = 25°C) 130 A (Package limitation: 120 A) A
Drain Current (ID) - Continuous (TC = 100°C) 92 A A
Drain Current (IDM) - Pulsed 522 A A
Static Drain to Source On Resistance (RDS(on)) 6.25 mΩ (Typ.) @ VGS = 10 V, ID = 100 A
Gate Threshold Voltage (VGS(th)) 2.0 - 4.0 V V
Power Dissipation (PD) at TC = 25°C 333 W W
Operating and Storage Temperature Range -55 to +175 °C °C

Key Features

  • High Performance Trench Technology for Extremely Low RDS(on)
  • Fast Switching and Low Gate Charge
  • High Power and Current Handling Capability
  • RoHS Compliant
  • Advanced POWERTRENCH process to minimize on-state resistance while maintaining superior switching performance

Applications

  • Synchronous Rectification for ATX / Server / Telecom PSU
  • Battery Protection Circuit
  • Motor Drives and Uninterruptible Power Supplies
  • Micro Solar Inverter

Q & A

  1. What is the maximum drain to source voltage (VDSS) of the FDB075N15A?

    The maximum drain to source voltage (VDSS) is 150 V.

  2. What is the typical on-state resistance (RDS(on)) of the FDB075N15A?

    The typical on-state resistance (RDS(on)) is 6.25 mΩ at VGS = 10 V and ID = 100 A.

  3. What are the package options for the FDB075N15A?

    The device is available in TO-220 and D2PAK-3 (TO-263, 3-lead) packages.

  4. What is the maximum continuous drain current (ID) at TC = 25°C?

    The maximum continuous drain current (ID) at TC = 25°C is 130 A, with a package limitation of 120 A.

  5. Is the FDB075N15A RoHS compliant?

    Yes, the FDB075N15A is RoHS compliant.

  6. What are some typical applications of the FDB075N15A?

    Typical applications include synchronous rectification for ATX / Server / Telecom PSU, battery protection circuits, motor drives, uninterruptible power supplies, and micro solar inverters.

  7. What is the operating and storage temperature range for the FDB075N15A?

    The operating and storage temperature range is -55 to +175 °C.

  8. What is the maximum power dissipation (PD) at TC = 25°C?

    The maximum power dissipation (PD) at TC = 25°C is 333 W.

  9. How does the POWERTRENCH technology benefit the FDB075N15A?

    The POWERTRENCH technology minimizes on-state resistance while maintaining superior switching performance.

  10. What is the gate threshold voltage (VGS(th)) range for the FDB075N15A?

    The gate threshold voltage (VGS(th)) range is 2.0 to 4.0 V.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:130A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:100 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:7350 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):333W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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