BBS3002-TL-1E
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onsemi BBS3002-TL-1E

Manufacturer No:
BBS3002-TL-1E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 100A D2PAK
Delivery:
Payment:
iso14001
iso45001
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iso13485

Product Introduction

Overview

The BBS3002-TL-1E is a P-Channel Power MOSFET produced by onsemi, designed for robust performance in various power handling applications. This device is part of the BBS3002 series and is known for its reliability and efficiency. It is packaged in a TO-263-3 case, making it suitable for surface mount technology (SMT) applications. The BBS3002-TL-1E is ideal for general-purpose switching and power management in demanding environments.

Key Specifications

Parameter Value Unit
Part Number BBS3002-TL-1E
Manufacturer onsemi
Package TO-263-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V V
Id - Continuous Drain Current 100 A A
Rds On - Drain-Source Resistance 9 mΩ
Vgs - Gate-Source Voltage -20 V, +20 V V
Qg - Gate Charge 280 nC nC
Minimum Operating Temperature -55 °C °C
Maximum Operating Temperature +150 °C °C
Pd - Power Dissipation 90 W W
Channel Mode Enhancement
Rise Time 1000 ns ns
Fall Time 820 ns ns
Typical Turn-On Delay Time 95 ns ns
Typical Turn-Off Delay Time 800 ns ns

Key Features

  • Low On-Resistance: The BBS3002-TL-1E features a low drain-source on-state resistance (Rds(on)) of 9 mΩ, which enhances its efficiency in power handling applications.
  • High Current Capability: It can handle a continuous drain current of 100 A and a pulse current of up to 400 A, making it suitable for high-power applications.
  • Wide Operating Temperature Range: The device operates over a temperature range of -55 °C to +150 °C, ensuring reliability in diverse environmental conditions.
  • Robust Avalanche Energy Rating: With an avalanche energy rating of 340 mJ, this MOSFET is designed to withstand high-energy pulses.
  • Compact Packaging: The TO-263-3 package is compact and suitable for surface mount technology, making it ideal for space-constrained designs.

Applications

  • Power Management: The BBS3002-TL-1E is used in various power management circuits, including DC-DC converters, power supplies, and voltage regulators.
  • Motor Control: It is suitable for motor control applications due to its high current handling and low on-resistance.
  • Switching Circuits: The device is used in general-purpose switching applications, including load switching and power switching circuits.
  • Automotive Systems: Its robustness and wide operating temperature range make it a good fit for automotive systems, including battery management and power distribution.

Q & A

  1. What is the part number of this MOSFET?

    The part number of this MOSFET is BBS3002-TL-1E.

  2. Who is the manufacturer of the BBS3002-TL-1E?

    The manufacturer of the BBS3002-TL-1E is onsemi.

  3. What is the package type of the BBS3002-TL-1E?

    The BBS3002-TL-1E is packaged in a TO-263-3 case.

  4. What is the maximum drain-source breakdown voltage of the BBS3002-TL-1E?

    The maximum drain-source breakdown voltage is 60 V.

  5. What is the continuous drain current rating of the BBS3002-TL-1E?

    The continuous drain current rating is 100 A.

  6. What is the typical on-resistance of the BBS3002-TL-1E?

    The typical on-resistance (Rds(on)) is 9 mΩ.

  7. What is the operating temperature range of the BBS3002-TL-1E?

    The operating temperature range is from -55 °C to +150 °C.

  8. What is the power dissipation rating of the BBS3002-TL-1E?

    The power dissipation rating is 90 W.

  9. Is the BBS3002-TL-1E RoHS compliant?

    Yes, the BBS3002-TL-1E is RoHS compliant.

  10. What are some common applications of the BBS3002-TL-1E?

    Common applications include power management, motor control, switching circuits, and automotive systems.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:280 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13200 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Same Series
BBS3002-DL-E
BBS3002-DL-E
MOSFET P-CH 60V 100A SMP-FD
BBS3002-DL-1E
BBS3002-DL-1E
MOSFET P-CH 60V 100A D2PAK

Similar Products

Part Number BBS3002-TL-1E BBS3002-DL-1E
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 50A, 10V 5.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 280 nC @ 10 V 280 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 20 V 13200 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 90W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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