BBS3002-TL-1E
  • Share:

onsemi BBS3002-TL-1E

Manufacturer No:
BBS3002-TL-1E
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 60V 100A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BBS3002-TL-1E is a P-Channel Power MOSFET produced by onsemi, designed for robust performance in various power handling applications. This device is part of the BBS3002 series and is known for its reliability and efficiency. It is packaged in a TO-263-3 case, making it suitable for surface mount technology (SMT) applications. The BBS3002-TL-1E is ideal for general-purpose switching and power management in demanding environments.

Key Specifications

Parameter Value Unit
Part Number BBS3002-TL-1E
Manufacturer onsemi
Package TO-263-3
Transistor Polarity P-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V V
Id - Continuous Drain Current 100 A A
Rds On - Drain-Source Resistance 9 mΩ
Vgs - Gate-Source Voltage -20 V, +20 V V
Qg - Gate Charge 280 nC nC
Minimum Operating Temperature -55 °C °C
Maximum Operating Temperature +150 °C °C
Pd - Power Dissipation 90 W W
Channel Mode Enhancement
Rise Time 1000 ns ns
Fall Time 820 ns ns
Typical Turn-On Delay Time 95 ns ns
Typical Turn-Off Delay Time 800 ns ns

Key Features

  • Low On-Resistance: The BBS3002-TL-1E features a low drain-source on-state resistance (Rds(on)) of 9 mΩ, which enhances its efficiency in power handling applications.
  • High Current Capability: It can handle a continuous drain current of 100 A and a pulse current of up to 400 A, making it suitable for high-power applications.
  • Wide Operating Temperature Range: The device operates over a temperature range of -55 °C to +150 °C, ensuring reliability in diverse environmental conditions.
  • Robust Avalanche Energy Rating: With an avalanche energy rating of 340 mJ, this MOSFET is designed to withstand high-energy pulses.
  • Compact Packaging: The TO-263-3 package is compact and suitable for surface mount technology, making it ideal for space-constrained designs.

Applications

  • Power Management: The BBS3002-TL-1E is used in various power management circuits, including DC-DC converters, power supplies, and voltage regulators.
  • Motor Control: It is suitable for motor control applications due to its high current handling and low on-resistance.
  • Switching Circuits: The device is used in general-purpose switching applications, including load switching and power switching circuits.
  • Automotive Systems: Its robustness and wide operating temperature range make it a good fit for automotive systems, including battery management and power distribution.

Q & A

  1. What is the part number of this MOSFET?

    The part number of this MOSFET is BBS3002-TL-1E.

  2. Who is the manufacturer of the BBS3002-TL-1E?

    The manufacturer of the BBS3002-TL-1E is onsemi.

  3. What is the package type of the BBS3002-TL-1E?

    The BBS3002-TL-1E is packaged in a TO-263-3 case.

  4. What is the maximum drain-source breakdown voltage of the BBS3002-TL-1E?

    The maximum drain-source breakdown voltage is 60 V.

  5. What is the continuous drain current rating of the BBS3002-TL-1E?

    The continuous drain current rating is 100 A.

  6. What is the typical on-resistance of the BBS3002-TL-1E?

    The typical on-resistance (Rds(on)) is 9 mΩ.

  7. What is the operating temperature range of the BBS3002-TL-1E?

    The operating temperature range is from -55 °C to +150 °C.

  8. What is the power dissipation rating of the BBS3002-TL-1E?

    The power dissipation rating is 90 W.

  9. Is the BBS3002-TL-1E RoHS compliant?

    Yes, the BBS3002-TL-1E is RoHS compliant.

  10. What are some common applications of the BBS3002-TL-1E?

    Common applications include power management, motor control, switching circuits, and automotive systems.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:100A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4V, 10V
Rds On (Max) @ Id, Vgs:5.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:- 
Gate Charge (Qg) (Max) @ Vgs:280 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13200 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

$4.11
41

Please send RFQ , we will respond immediately.

Same Series
BBS3002-DL-E
BBS3002-DL-E
MOSFET P-CH 60V 100A SMP-FD
BBS3002-DL-1E
BBS3002-DL-1E
MOSFET P-CH 60V 100A D2PAK

Similar Products

Part Number BBS3002-TL-1E BBS3002-DL-1E
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 100A (Ta) 100A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V 4V, 10V
Rds On (Max) @ Id, Vgs 5.8mOhm @ 50A, 10V 5.8mOhm @ 50A, 10V
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs 280 nC @ 10 V 280 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13200 pF @ 20 V 13200 pF @ 20 V
FET Feature - -
Power Dissipation (Max) 90W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

BSC040N10NS5ATMA1
BSC040N10NS5ATMA1
Infineon Technologies
MOSFET N-CH 100V 100A TDSON
STB36NM60ND
STB36NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A D2PAK
NTH4LN019N65S3H
NTH4LN019N65S3H
onsemi
POWER MOSFET, N-CHANNEL, SUPERFE
CSD17575Q3T
CSD17575Q3T
Texas Instruments
MOSFET N-CH 30V 60A 8VSON
PSMN2R0-30YLE,115
PSMN2R0-30YLE,115
Nexperia USA Inc.
MOSFET N-CH 30V 100A LFPAK56
STD105N10F7AG
STD105N10F7AG
STMicroelectronics
MOSFET N-CH 100V 80A DPAK
STP4NK80ZFP
STP4NK80ZFP
STMicroelectronics
MOSFET N-CH 800V 3A TO220FP
BSN20BK215
BSN20BK215
Nexperia USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
STP18N60M2
STP18N60M2
STMicroelectronics
MOSFET N-CH 600V 13A TO220
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75
2SJ652-1E
2SJ652-1E
onsemi
MOSFET P-CH 60V 28A TO220F-3SG
FDMS86101E
FDMS86101E
onsemi
MOSFET N-CH 100V 12.4A/60A 8PQFN

Related Product By Brand

BAW56LT3G
BAW56LT3G
onsemi
DIODE ARRAY GP 70V 200MA SOT23-3
FDMT800100DC
FDMT800100DC
onsemi
MOSFET N-CH 100V 24A/162A 8DUAL
NCV33274ADR2G
NCV33274ADR2G
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
MC14050BDTEL
MC14050BDTEL
onsemi
BUFFER, 6-FUNC
MC74ACT541DTR2G
MC74ACT541DTR2G
onsemi
IC BUF NON-INVERT 5.5V 20TSSOP
MC74VHC1G32DTT1G
MC74VHC1G32DTT1G
onsemi
IC GATE OR 1CH 2-INP 5TSOP
ADP3110AKRZ
ADP3110AKRZ
onsemi
IC GATE DRVR HALF-BRIDGE 8SOIC
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
NCV97311MW50R2G
NCV97311MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
NCV4274ADS50R4G
NCV4274ADS50R4G
onsemi
IC REG LINEAR 5V 400MA D2PAK
LM2931CTG
LM2931CTG
onsemi
IC REG LIN POS ADJ 100MA TO220-5
NCV86601BDT50RKG
NCV86601BDT50RKG
onsemi
IC REG LINEAR 5V 150MA DPAK-5