Overview
The FQD7P06TM is a P-Channel enhancement mode power MOSFET produced by ON Semiconductor, utilizing their proprietary high cell density DMOS technology. This device is designed to minimize on-state resistance, providing a rugged and reliable performance for fast switching applications. It is packaged in a 3-pin DPAK (TO-252) surface mount configuration, making it suitable for a variety of power management and control applications.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Channel Type | P | |
| Maximum Continuous Drain Current | 5.4 A | A |
| Maximum Drain Source Voltage | 60 V | V |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 451 mΩ | mΩ |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2 V | V |
| Maximum Power Dissipation | 2.5 W | W |
| Maximum Gate Source Voltage | -25 V, +25 V | V |
| Typical Gate Charge @ Vgs | 6.3 nC @ 10 V | nC |
| Maximum Operating Temperature | +150 °C | °C |
| Minimum Operating Temperature | -55 °C | °C |
Key Features
- Voltage controlled P-Channel small signal switch
- High-Density cell design using DMOS technology
- High saturation current
- Superior switching performance
- Great rugged and reliable performance
- Low Gate Charge (Typ. 6.3 nC)
- Low Crss (Typ. 25 pF)
- 100% Avalanche Tested
Applications
- Load Switching
- DC/DC converters
- Battery protection
- Power management control
- DC motor control
- Switched mode power supplies
- Audio amplifiers
- Variable switching power applications
Q & A
- What is the maximum continuous drain current of the FQD7P06TM MOSFET?
The maximum continuous drain current is 5.4 A.
- What is the maximum drain-source voltage of the FQD7P06TM MOSFET?
The maximum drain-source voltage is 60 V.
- What package type is the FQD7P06TM MOSFET available in?
The FQD7P06TM is packaged in a 3-pin DPAK (TO-252) surface mount configuration.
- What is the minimum gate threshold voltage of the FQD7P06TM MOSFET?
The minimum gate threshold voltage is 2 V.
- What are the typical applications of the FQD7P06TM MOSFET?
The typical applications include load switching, DC/DC converters, battery protection, power management control, and DC motor control.
- What is the maximum power dissipation of the FQD7P06TM MOSFET?
The maximum power dissipation is 2.5 W.
- What is the maximum operating temperature of the FQD7P06TM MOSFET?
The maximum operating temperature is +150 °C.
- What is the minimum operating temperature of the FQD7P06TM MOSFET?
The minimum operating temperature is -55 °C.
- What technology is used in the production of the FQD7P06TM MOSFET?
The FQD7P06TM is produced using ON Semiconductor's proprietary high cell density DMOS technology.
- What are the benefits of the high-density cell design in the FQD7P06TM MOSFET?
The high-density cell design minimizes on-state resistance, providing superior switching performance and high avalanche energy strength.
