Overview
The FQB34P10TM-F085 is a 100V P-Channel enhancement mode power field effect transistor produced by onsemi. This device utilizes onsemi’s proprietary, planar stripe, DMOS technology, which is designed to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in avalanche and commutation modes. It is well-suited for various low voltage applications, including audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
Key Specifications
| Parameter | Units | Typical | Maximum |
|---|---|---|---|
| Drain-Source Voltage (VDSS) | V | -100 | -100 |
| Drain Current (ID) - Continuous (TC = 25°C) | A | -33.5 | -33.5 |
| Drain Current (ID) - Continuous (TC = 100°C) | A | -23.5 | -23.5 |
| Pulsed Drain Current (IDM) | A | -134 | -134 |
| Gate-Source Voltage (VGSS) | V | ±25 | ±25 |
| Single Pulsed Avalanche Energy (EAS) | mJ | 2200 | 2200 |
| Avalanche Current (IAR) | A | -33.5 | -33.5 |
| Repetitive Avalanche Energy (EAR) | mJ | 15.5 | 15.5 |
| Peak Diode Recovery dv/dt | V/ns | -6.0 | -6.0 |
| Power Dissipation (PD) at TA = 25°C | W | 3.75 | 3.75 |
| Power Dissipation (PD) at TC = 25°C | W | 155 | 155 |
| Thermal Resistance, Junction-to-Case (RθJC) | °C/W | -- | 0.97 |
| Thermal Resistance, Junction-to-Ambient (RθJA) | °C/W | -- | 62.5 |
| Operating and Storage Temperature Range (TJ, TSTG) | °C | -55 to +175 | -55 to +175 |
| Maximum Junction Temperature Rating | °C | -- | 175 |
Key Features
- -33.5A, -100V, RDS(on) = 0.06Ω @VGS = -10 V
- Low gate charge (typical 85 nC)
- Low Crss (typical 170 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- 175°C maximum junction temperature rating
- Qualified to AEC Q101 and RoHS Compliant
Applications
The FQB34P10TM-F085 is well-suited for various low voltage applications, including:
- Audio amplifiers
- High efficiency switching DC/DC converters
- DC motor control
Q & A
- What is the maximum drain-source voltage (VDSS) of the FQB34P10TM-F085?
The maximum drain-source voltage (VDSS) is -100V.
- What is the continuous drain current (ID) at TC = 25°C?
The continuous drain current (ID) at TC = 25°C is -33.5A.
- What is the typical gate charge (Qg) of this MOSFET?
The typical gate charge (Qg) is 85 nC.
- What is the maximum junction temperature rating of the FQB34P10TM-F085?
The maximum junction temperature rating is 175°C.
- Is the FQB34P10TM-F085 qualified to any automotive standards?
Yes, it is qualified to AEC Q101.
- What is the thermal resistance, junction-to-case (RθJC) of this device?
The thermal resistance, junction-to-case (RθJC) is 0.97°C/W.
- What are the typical applications for the FQB34P10TM-F085?
Typical applications include audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.
- What is the power dissipation (PD) at TA = 25°C?
The power dissipation (PD) at TA = 25°C is 3.75W.
- Is the FQB34P10TM-F085 RoHS compliant?
Yes, it is RoHS compliant.
- What is the peak diode recovery dv/dt of this MOSFET?
The peak diode recovery dv/dt is -6.0 V/ns.
