Overview
The STP24NM60N is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is renowned for its low on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters. The STP24NM60N features a vertical structure combined with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge values. This makes it an ideal choice for applications requiring high efficiency and reliability.
Key Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Breakdown Voltage (VBRDSS) | 600 | V |
| Static Drain-Source On Resistance (RDS(on)) | < 0.19 | Ω |
| Continuous Drain Current (ID) at TC = 25°C | 17 | A |
| Pulsed Drain Current (IDM) | 68 | A |
| Gate-Source Voltage (VGS) | ± 30 | V |
| Gate Threshold Voltage (VGS(th)) | 2 - 4 | V |
| Thermal Resistance Junction-Case (Rthj-case) | 4 | °C/W |
| Maximum Junction Temperature (TJ) | 150 | °C |
| Storage Temperature (Tstg) | -55 to 150 | °C |
| Package Type | TO-220 |
Key Features
- Low input capacitance and gate charge
- Low gate input resistance
- 100% avalanche tested
- High efficiency due to low on-resistance and gate charge
- Suitable for demanding high-efficiency converters
- Available in ECOPACK® packages for environmental compliance
Applications
The STP24NM60N is designed for various switching applications, including high-efficiency converters, power supplies, and other systems that require low on-resistance and high reliability.
Q & A
- What is the drain-source breakdown voltage of the STP24NM60N?
The drain-source breakdown voltage (VBRDSS) is 600 V. - What is the maximum continuous drain current at TC = 25°C?
The maximum continuous drain current (ID) at TC = 25°C is 17 A. - What is the typical on-resistance of the STP24NM60N?
The typical static drain-source on resistance (RDS(on)) is less than 0.19 Ω. - What is the gate-source voltage range for the STP24NM60N?
The gate-source voltage (VGS) range is ± 30 V. - What are the thermal resistance values for the STP24NM60N?
The thermal resistance junction-case (Rthj-case) is 4 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W. - Is the STP24NM60N 100% avalanche tested?
Yes, the STP24NM60N is 100% avalanche tested. - What are the typical applications for the STP24NM60N?
The STP24NM60N is typically used in switching applications, including high-efficiency converters and power supplies. - What package types are available for the STP24NM60N?
The STP24NM60N is available in the TO-220 package type. - What is the maximum junction temperature for the STP24NM60N?
The maximum junction temperature (TJ) is 150 °C. - Does the STP24NM60N come in environmentally compliant packages?
Yes, the STP24NM60N is available in ECOPACK® packages, which comply with environmental standards.
