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STP24NM60N
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STMicroelectronics STP24NM60N

Manufacturer No:
STP24NM60N
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 17A TO220
Delivery:
Payment:
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Product Introduction

Overview

The STP24NM60N is a high-performance N-channel Power MOSFET developed by STMicroelectronics using the second generation of MDmesh™ technology. This device is renowned for its low on-resistance and gate charge, making it suitable for the most demanding high-efficiency converters. The STP24NM60N features a vertical structure combined with STMicroelectronics' strip layout, resulting in one of the world's lowest on-resistance and gate charge values. This makes it an ideal choice for applications requiring high efficiency and reliability.

Key Specifications

ParameterValueUnit
Drain-Source Breakdown Voltage (VBRDSS)600V
Static Drain-Source On Resistance (RDS(on))< 0.19Ω
Continuous Drain Current (ID) at TC = 25°C17A
Pulsed Drain Current (IDM)68A
Gate-Source Voltage (VGS)± 30V
Gate Threshold Voltage (VGS(th))2 - 4V
Thermal Resistance Junction-Case (Rthj-case)4°C/W
Maximum Junction Temperature (TJ)150°C
Storage Temperature (Tstg)-55 to 150°C
Package TypeTO-220

Key Features

  • Low input capacitance and gate charge
  • Low gate input resistance
  • 100% avalanche tested
  • High efficiency due to low on-resistance and gate charge
  • Suitable for demanding high-efficiency converters
  • Available in ECOPACK® packages for environmental compliance

Applications

The STP24NM60N is designed for various switching applications, including high-efficiency converters, power supplies, and other systems that require low on-resistance and high reliability.

Q & A

  1. What is the drain-source breakdown voltage of the STP24NM60N?
    The drain-source breakdown voltage (VBRDSS) is 600 V.
  2. What is the maximum continuous drain current at TC = 25°C?
    The maximum continuous drain current (ID) at TC = 25°C is 17 A.
  3. What is the typical on-resistance of the STP24NM60N?
    The typical static drain-source on resistance (RDS(on)) is less than 0.19 Ω.
  4. What is the gate-source voltage range for the STP24NM60N?
    The gate-source voltage (VGS) range is ± 30 V.
  5. What are the thermal resistance values for the STP24NM60N?
    The thermal resistance junction-case (Rthj-case) is 4 °C/W, and the thermal resistance junction-ambient (Rthj-amb) is 62.5 °C/W.
  6. Is the STP24NM60N 100% avalanche tested?
    Yes, the STP24NM60N is 100% avalanche tested.
  7. What are the typical applications for the STP24NM60N?
    The STP24NM60N is typically used in switching applications, including high-efficiency converters and power supplies.
  8. What package types are available for the STP24NM60N?
    The STP24NM60N is available in the TO-220 package type.
  9. What is the maximum junction temperature for the STP24NM60N?
    The maximum junction temperature (TJ) is 150 °C.
  10. Does the STP24NM60N come in environmentally compliant packages?
    Yes, the STP24NM60N is available in ECOPACK® packages, which comply with environmental standards.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:17A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:190mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1400 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):125W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number STP24NM60N STP26NM60N STP34NM60N STP24NM65N STP25NM60N STP21NM60N STP22NM60N STP23NM60N
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Obsolete Obsolete Obsolete Active Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 650 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 17A (Tc) 20A (Tc) 29A (Tc) 19A (Tc) 21A (Tc) 17A (Tc) 16A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 190mOhm @ 8A, 10V 165mOhm @ 10A, 10V 105mOhm @ 14.5A, 10V 190mOhm @ 9.5A, 10V 160mOhm @ 10.5A, 10V 220mOhm @ 8.5A, 10V 220mOhm @ 8A, 10V 180mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 100µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V 60 nC @ 10 V 80 nC @ 10 V 70 nC @ 10 V 84 nC @ 10 V 66 nC @ 10 V 44 nC @ 10 V 60 nC @ 10 V
Vgs (Max) ±30V ±30V ±25V ±25V ±25V ±25V ±30V ±25V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 50 V 1800 pF @ 50 V 2722 pF @ 100 V 2500 pF @ 50 V 2400 pF @ 50 V 1900 pF @ 50 V 1300 pF @ 50 V 2050 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 125W (Tc) 140W (Tc) 250W (Tc) 160W (Tc) 160W (Tc) 140W (Tc) 125W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220 TO-220
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

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