STF13N60M2
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STMicroelectronics STF13N60M2

Manufacturer No:
STF13N60M2
Manufacturer:
STMicroelectronics
Package:
Tube
Description:
MOSFET N-CH 600V 11A TO220FP
Delivery:
Payment:
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Product Introduction

Overview

The STF13N60M2 is an N-channel Power MOSFET developed by STMicroelectronics using the advanced MDmesh M2 technology. This device is designed to offer high performance and reliability in various power management applications. With its low gate input resistance and improved vertical structure, the STF13N60M2 provides efficient switching characteristics and reduced power losses.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)600 V
RDS(on) (Drain-Source On-Resistance)0.35 Ω (typ.)
ID (Drain Current)11 A
Ptot (Total Power Dissipation)Dependent on package and thermal conditions
TJ (Junction Temperature)-55°C to 150°C
PackageTO-220FP

Key Features

  • MDmesh M2 technology for low Qg and high efficiency
  • Low gate input resistance for improved switching performance
  • High drain current capability of 11 A
  • High voltage rating of 600 V
  • TO-220FP package for good thermal dissipation
  • Low on-resistance (RDS(on)) of 0.35 Ω (typ.)

Applications

  • Power supplies and DC-DC converters
  • Motor control and drives
  • Industrial automation and control systems
  • Aerospace and defense applications
  • High-power audio systems

Q & A

  1. What is the maximum drain-source voltage of the STF13N60M2?
    The maximum drain-source voltage (VDS) is 600 V.
  2. What is the typical on-resistance (RDS(on)) of the STF13N60M2?
    The typical on-resistance (RDS(on)) is 0.35 Ω.
  3. What is the maximum drain current (ID) of the STF13N60M2?
    The maximum drain current (ID) is 11 A.
  4. In which package is the STF13N60M2 available?
    The STF13N60M2 is available in the TO-220FP package.
  5. What technology is used in the STF13N60M2?
    The STF13N60M2 uses MDmesh M2 technology.
  6. What are the typical applications of the STF13N60M2?
    Typical applications include power supplies, DC-DC converters, motor control, industrial automation, and high-power audio systems.
  7. What is the junction temperature range of the STF13N60M2?
    The junction temperature range is -55°C to 150°C.
  8. How does the MDmesh M2 technology benefit the STF13N60M2?
    The MDmesh M2 technology provides low gate input resistance and improved vertical structure, leading to efficient switching characteristics and reduced power losses.
  9. Is the STF13N60M2 suitable for high-power applications?
    Yes, the STF13N60M2 is suitable for high-power applications due to its high voltage and current ratings.
  10. Where can I find detailed specifications for the STF13N60M2?
    Detailed specifications can be found in the datasheet available on STMicroelectronics' official website or through authorized distributors like Digi-Key, Mouser, etc.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:580 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):25W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220FP
Package / Case:TO-220-3 Full Pack
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Same Series
STFI13N60M2
STFI13N60M2
MOSFET N-CH 600V 11A I2PAKFP

Similar Products

Part Number STF13N60M2 STF18N60M2 STF16N60M2 STF13N65M2 STF10N60M2 STF12N60M2 STF13N60DM2
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 650 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 11A (Tc) 13A (Tc) 12A (Tc) 10A (Tc) 7.5A (Tc) 9A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V 280mOhm @ 6.5A, 10V 320mOhm @ 6A, 10V 430mOhm @ 5A, 10V 600mOhm @ 4A, 10V 450mOhm @ 4.5A, 10V 365mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 21.5 nC @ 10 V 19 nC @ 10 V 17 nC @ 10 V 13.5 nC @ 10 V 16 nC @ 10 V 19 nC @ 10 V
Vgs (Max) ±25V ±25V ±25V ±25V ±25V ±25V ±25V
Input Capacitance (Ciss) (Max) @ Vds 580 pF @ 100 V 791 pF @ 100 V 700 pF @ 100 V 590 pF @ 100 V 400 pF @ 100 V 538 pF @ 100 V 730 pF @ 100 V
FET Feature - - - - - - -
Power Dissipation (Max) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc) 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ) 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP TO-220FP
Package / Case TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack TO-220-3 Full Pack

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