STD2NK100Z
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STMicroelectronics STD2NK100Z

Manufacturer No:
STD2NK100Z
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 1000V 1.85A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The STD2NK100Z is a high-voltage, Zener-protected N-channel Power MOSFET developed by STMicroelectronics using their advanced SuperMESH™ technology. This device is designed to offer high performance and reliability in various power management and switching applications. The SuperMESH technology optimizes the device's structure to achieve low on-resistance and high switching efficiency, making it suitable for demanding power management tasks.

Key Specifications

ParameterValue
Voltage Rating (Vds)1000 V
Current Rating (Id)1.85 A (Tc)
Power Dissipation (Pd)70 W (Tc)
Package TypeSurface Mount DPAK
Intrinsic CapacitancesVery low

Key Features

  • Zener protection for enhanced reliability
  • SuperMESH™ technology for low on-resistance and high switching efficiency
  • Very low intrinsic capacitances
  • Optimized for use in switching applications

Applications

The STD2NK100Z is ideal for various high-voltage switching applications, including power supplies, motor control, and industrial automation. Its high voltage rating and low on-resistance make it suitable for use in systems that require efficient power management and high reliability.

Q & A

  1. What is the voltage rating of the STD2NK100Z?
    The voltage rating of the STD2NK100Z is 1000 V.
  2. What is the current rating of the STD2NK100Z?
    The current rating of the STD2NK100Z is 1.85 A (Tc).
  3. What is the power dissipation of the STD2NK100Z?
    The power dissipation of the STD2NK100Z is 70 W (Tc).
  4. What package type does the STD2NK100Z use?
    The STD2NK100Z uses a surface mount DPAK package.
  5. What technology is used in the STD2NK100Z?
    The STD2NK100Z is developed using STMicroelectronics' SuperMESH™ technology.
  6. What are the key features of the STD2NK100Z?
    The key features include Zener protection, low on-resistance, high switching efficiency, and very low intrinsic capacitances.
  7. What are the typical applications of the STD2NK100Z?
    The STD2NK100Z is typically used in high-voltage switching applications such as power supplies, motor control, and industrial automation.
  8. Why is the STD2NK100Z optimized for switching applications?
    The STD2NK100Z is optimized for switching applications due to its low on-resistance, high switching efficiency, and very low intrinsic capacitances.
  9. Where can I find detailed specifications for the STD2NK100Z?
    Detailed specifications for the STD2NK100Z can be found on the STMicroelectronics official website, as well as on distributor websites like Digi-Key and Mouser.
  10. What is the significance of SuperMESH™ technology in the STD2NK100Z?
    The SuperMESH™ technology in the STD2NK100Z enhances the device's performance by optimizing its structure for low on-resistance and high switching efficiency.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:1.85A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:16 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:499 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):70W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

$2.68
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Same Series
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Similar Products

Part Number STD2NK100Z STD3NK100Z STD4NK100Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 1.85A (Tc) 2.5A (Tc) 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 8.5Ohm @ 900mA, 10V 6Ohm @ 1.25A, 10V 6.8Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V 18 nC @ 10 V 18 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 499 pF @ 25 V 601 pF @ 25 V 601 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 70W (Tc) 90W (Tc) 90W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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