STD3NK100Z
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STMicroelectronics STD3NK100Z

Manufacturer No:
STD3NK100Z
Manufacturer:
STMicroelectronics
Package:
Tape & Reel (TR)
Description:
MOSFET N-CH 1000V 2.5A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The STD3NK100Z is a high-voltage N-channel Power MOSFET developed by STMicroelectronics, utilizing the advanced SuperMESH™ technology. This device is packaged in a TO-252 (DPAK) surface mount package and is designed for high-performance applications requiring robust and reliable operation. The STD3NK100Z is characterized by its high voltage rating of 1000 V, low on-resistance of 5.4 Ω, and a current capability of 2.5 A, making it suitable for a variety of power management and switching applications.

Key Specifications

ParameterValue
Voltage Rating (Vds)1000 V
On-Resistance (Rds(on))5.4 Ω (typ.) at Vgs = 10 V
Continuous Drain Current (Id)2.5 A
Power Dissipation (Pd)90 W
Gate Threshold Voltage (Vth)4.5 V at Id = 250 μA
Package TypeTO-252 (DPAK)

Key Features

  • Extremely high dv/dt capability, ensuring robust operation in high-frequency applications.
  • Gate charge minimized, reducing switching losses and improving efficiency.
  • 100% avalanche tested, guaranteeing reliability under extreme conditions.
  • Very good manufacturing repeatability, ensuring consistent performance across devices.
  • Very low intrinsic capacitance, enhancing high-frequency performance.
  • Zener-protected, providing additional protection against voltage spikes.

Applications

The STD3NK100Z is suitable for a wide range of high-voltage applications, including but not limited to:

  • Power supplies and DC-DC converters.
  • Motor control and drives.
  • Industrial automation and control systems.
  • Renewable energy systems, such as solar and wind power.
  • High-voltage switching and power management in various industrial and consumer electronics.

Q & A

  1. What is the voltage rating of the STD3NK100Z?
    The voltage rating of the STD3NK100Z is 1000 V.
  2. What is the typical on-resistance of the STD3NK100Z?
    The typical on-resistance is 5.4 Ω at Vgs = 10 V.
  3. What is the continuous drain current of the STD3NK100Z?
    The continuous drain current is 2.5 A.
  4. What is the power dissipation capability of the STD3NK100Z?
    The power dissipation capability is 90 W.
  5. What package type is the STD3NK100Z available in?
    The STD3NK100Z is available in a TO-252 (DPAK) package.
  6. Does the STD3NK100Z have any special protection features?
    Yes, it is Zener-protected and 100% avalanche tested.
  7. What are some typical applications for the STD3NK100Z?
    Typical applications include power supplies, motor control, industrial automation, and renewable energy systems.
  8. What technology is used in the STD3NK100Z?
    The STD3NK100Z uses the SuperMESH™ technology.
  9. What is the gate threshold voltage of the STD3NK100Z?
    The gate threshold voltage is 4.5 V at Id = 250 μA.
  10. Is the STD3NK100Z RoHS compliant?
    Yes, the STD3NK100Z is RoHS compliant.

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):1000 V
Current - Continuous Drain (Id) @ 25°C:2.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:6Ohm @ 1.25A, 10V
Vgs(th) (Max) @ Id:4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:601 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):90W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

$2.52
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Same Series
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STP3NK100Z
MOSFET N-CH 1000V 2.5A TO220AB

Similar Products

Part Number STD3NK100Z STD4NK100Z STD2NK100Z
Manufacturer STMicroelectronics STMicroelectronics STMicroelectronics
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 1000 V 1000 V 1000 V
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc) 2.2A (Tc) 1.85A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 6Ohm @ 1.25A, 10V 6.8Ohm @ 1.1A, 10V 8.5Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 50µA 4.5V @ 50µA 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 18 nC @ 10 V 16 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 601 pF @ 25 V 601 pF @ 25 V 499 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 90W (Tc) 90W (Tc) 70W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package DPAK DPAK DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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