FDY102PZ
  • Share:

onsemi FDY102PZ

Manufacturer No:
FDY102PZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 830MA SC89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDY102PZ is a P-Channel MOSFET produced by onsemi, designed using an advanced Power Trench process. This small signal MOSFET is optimized for low on-resistance (rDS(on)) at a gate-source voltage (VGS) of –1.5 V, making it suitable for a variety of applications requiring efficient power management.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
ID (Drain Current)830 mA (at Ta)
PD (Power Dissipation)625 mW (at Ta)
rDS(on) (On-Resistance)0.5 Ω @ VGS = –4.5 V, ID = 0.83 A
VGS(th) (Threshold Voltage)400 mV @ ID = 250 μA
PackageSC-89-3 (Surface Mount)
RoHS ComplianceYes

Key Features

  • Low on-resistance (rDS(on)) for efficient power management.
  • Advanced Power Trench process for improved performance.
  • P-Channel configuration suitable for various switching and power management applications.
  • Compact SC-89-3 surface mount package for space-efficient designs.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The FDY102PZ is versatile and can be used in a range of applications, including:

  • Brushless DC motor control.
  • Power management in portable electronics.
  • Switching circuits in consumer and industrial devices.
  • Low-power DC-DC converters.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDY102PZ?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the maximum drain current (ID) at ambient temperature (Ta)?
    The maximum drain current (ID) at ambient temperature (Ta) is 830 mA.
  3. What is the on-resistance (rDS(on)) at VGS = –4.5 V and ID = 0.83 A?
    The on-resistance (rDS(on)) is 0.5 Ω.
  4. What is the threshold voltage (VGS(th)) at ID = 250 μA?
    The threshold voltage (VGS(th)) is 400 mV.
  5. What is the package type of the FDY102PZ?
    The package type is SC-89-3 (Surface Mount).
  6. Is the FDY102PZ RoHS compliant?
    Yes, the FDY102PZ is RoHS compliant.
  7. What are some typical applications of the FDY102PZ?
    Typical applications include brushless DC motor control, power management in portable electronics, switching circuits in consumer and industrial devices, and low-power DC-DC converters.
  8. What is the power dissipation (PD) at ambient temperature (Ta)?
    The power dissipation (PD) at ambient temperature (Ta) is 625 mW.
  9. Why is the FDY102PZ designed using an advanced Power Trench process?
    The FDY102PZ is designed using an advanced Power Trench process to optimize the on-resistance (rDS(on)) and improve overall performance.
  10. Where can I find detailed specifications and datasheets for the FDY102PZ?
    Detailed specifications and datasheets can be found on the onsemi website, Digi-Key, and other authorized distributors.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:830mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:500mOhm @ 830mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.1 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:135 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-3
Package / Case:SC-89, SOT-490
0 Remaining View Similar

In Stock

$0.53
657

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDY102PZ FDY100PZ FDY101PZ
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 830mA (Ta) 350mA (Ta) 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 500mOhm @ 830mA, 4.5V 1.2Ohm @ 350mA, 4.5V 8Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.1 nC @ 4.5 V 1.4 nC @ 4.5 V 1.4 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 135 pF @ 10 V 100 pF @ 10 V 100 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-89-3 SC-89-3 SC-89-3
Package / Case SC-89, SOT-490 SC-89, SOT-490 SC-89, SOT-490

Related Product By Categories

FDMC2523P
FDMC2523P
onsemi
MOSFET P-CH 150V 3A 8MLP
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
BSS84PH6327XTSA2
BSS84PH6327XTSA2
Infineon Technologies
MOSFET P-CH 60V 170MA SOT23-3
STWA88N65M5
STWA88N65M5
STMicroelectronics
MOSFET N-CH 650V 84A TO247
FDD86567-F085
FDD86567-F085
onsemi
MOSFET N-CH 60V 100A DPAK
BUK9M24-40EX
BUK9M24-40EX
Nexperia USA Inc.
MOSFET N-CH 40V 30A LFPAK33
CSD18511Q5A
CSD18511Q5A
Texas Instruments
MOSFET N-CH 40V 159A 8VSON
NDUL03N150CG
NDUL03N150CG
onsemi
MOSFET N-CH 1500V 2.5A TO3P
BSH112,235
BSH112,235
NXP USA Inc.
MOSFET N-CH 60V 300MA TO236AB
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
NTB52N10T4G
NTB52N10T4G
onsemi
MOSFET N-CH 100V 52A D2PAK
STF13NM60N-H
STF13NM60N-H
STMicroelectronics
MOSFET N-CH 600V 11A TO220FP

Related Product By Brand

NTD3055L104
NTD3055L104
onsemi
MOSFET N-CH 60V 12A DPAK
ISL9V5036S3ST_SB82026C
ISL9V5036S3ST_SB82026C
onsemi
INTEGRATED CIRCUIT
NB3U1548CDR2G
NB3U1548CDR2G
onsemi
IC CLK BUFFER 160MHZ 8SOIC
MC74HC163ADR2G
MC74HC163ADR2G
onsemi
LOG CMOS COUNTER 4BIT SOIC16
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
NCP1015AP100G
NCP1015AP100G
onsemi
IC OFFLINE SWITCH FLYBACK 7DIP
MC33364D1
MC33364D1
onsemi
IC OFFLINE SWITCH FLYBACK 8SOIC
NCP45495XMNTWG
NCP45495XMNTWG
onsemi
L MANGO
CAT1021WI30
CAT1021WI30
onsemi
CAT1021 - SUPERVISORY CIRCUIT WI
NCP160AMX330TBG
NCP160AMX330TBG
onsemi
IC REG LINEAR 3.3V 250MA 4XDFN
NCV1117ST18T3G
NCV1117ST18T3G
onsemi
IC REG LINEAR 1.8V 1A SOT223
MC78M05BDTT5G
MC78M05BDTT5G
onsemi
IC REG LINEAR 5V 500MA DPAK