FDY102PZ
  • Share:

onsemi FDY102PZ

Manufacturer No:
FDY102PZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 830MA SC89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDY102PZ is a P-Channel MOSFET produced by onsemi, designed using an advanced Power Trench process. This small signal MOSFET is optimized for low on-resistance (rDS(on)) at a gate-source voltage (VGS) of –1.5 V, making it suitable for a variety of applications requiring efficient power management.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
ID (Drain Current)830 mA (at Ta)
PD (Power Dissipation)625 mW (at Ta)
rDS(on) (On-Resistance)0.5 Ω @ VGS = –4.5 V, ID = 0.83 A
VGS(th) (Threshold Voltage)400 mV @ ID = 250 μA
PackageSC-89-3 (Surface Mount)
RoHS ComplianceYes

Key Features

  • Low on-resistance (rDS(on)) for efficient power management.
  • Advanced Power Trench process for improved performance.
  • P-Channel configuration suitable for various switching and power management applications.
  • Compact SC-89-3 surface mount package for space-efficient designs.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The FDY102PZ is versatile and can be used in a range of applications, including:

  • Brushless DC motor control.
  • Power management in portable electronics.
  • Switching circuits in consumer and industrial devices.
  • Low-power DC-DC converters.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDY102PZ?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the maximum drain current (ID) at ambient temperature (Ta)?
    The maximum drain current (ID) at ambient temperature (Ta) is 830 mA.
  3. What is the on-resistance (rDS(on)) at VGS = –4.5 V and ID = 0.83 A?
    The on-resistance (rDS(on)) is 0.5 Ω.
  4. What is the threshold voltage (VGS(th)) at ID = 250 μA?
    The threshold voltage (VGS(th)) is 400 mV.
  5. What is the package type of the FDY102PZ?
    The package type is SC-89-3 (Surface Mount).
  6. Is the FDY102PZ RoHS compliant?
    Yes, the FDY102PZ is RoHS compliant.
  7. What are some typical applications of the FDY102PZ?
    Typical applications include brushless DC motor control, power management in portable electronics, switching circuits in consumer and industrial devices, and low-power DC-DC converters.
  8. What is the power dissipation (PD) at ambient temperature (Ta)?
    The power dissipation (PD) at ambient temperature (Ta) is 625 mW.
  9. Why is the FDY102PZ designed using an advanced Power Trench process?
    The FDY102PZ is designed using an advanced Power Trench process to optimize the on-resistance (rDS(on)) and improve overall performance.
  10. Where can I find detailed specifications and datasheets for the FDY102PZ?
    Detailed specifications and datasheets can be found on the onsemi website, Digi-Key, and other authorized distributors.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:830mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:500mOhm @ 830mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.1 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:135 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-3
Package / Case:SC-89, SOT-490
0 Remaining View Similar

In Stock

$0.53
657

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDY102PZ FDY100PZ FDY101PZ
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 830mA (Ta) 350mA (Ta) 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 500mOhm @ 830mA, 4.5V 1.2Ohm @ 350mA, 4.5V 8Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.1 nC @ 4.5 V 1.4 nC @ 4.5 V 1.4 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 135 pF @ 10 V 100 pF @ 10 V 100 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-89-3 SC-89-3 SC-89-3
Package / Case SC-89, SOT-490 SC-89, SOT-490 SC-89, SOT-490

Related Product By Categories

IRF5305PBF
IRF5305PBF
Infineon Technologies
MOSFET P-CH 55V 31A TO220AB
FDB12N50TM
FDB12N50TM
onsemi
MOSFET N-CH 500V 11.5A D2PAK
BUK98180-100A/CUX
BUK98180-100A/CUX
Nexperia USA Inc.
MOSFET N-CH 100V 4.6A SOT223
FDBL0150N80
FDBL0150N80
onsemi
MOSFET N-CH 80V 300A 8HPSOF
STP36NF06L
STP36NF06L
STMicroelectronics
MOSFET N-CH 60V 30A TO220AB
PSMN0R9-25YLDX
PSMN0R9-25YLDX
Nexperia USA Inc.
MOSFET N-CH 25V 300A LFPAK56
STB80NF55-06T4
STB80NF55-06T4
STMicroelectronics
MOSFET N-CH 55V 80A D2PAK
STP80PF55
STP80PF55
STMicroelectronics
MOSFET P-CH 55V 80A TO220AB
STD85N3LH5
STD85N3LH5
STMicroelectronics
MOSFET N-CH 30V 80A DPAK
FQD13N10LTM_NBEL001
FQD13N10LTM_NBEL001
onsemi
MOSFET N-CH 100V 10A DPAK
PH5030AL,115
PH5030AL,115
Nexperia USA Inc.
MOSFET N-CH 30V 91A LFPAK56
NX3008NBKT,115
NX3008NBKT,115
NXP USA Inc.
MOSFET N-CH 30V 350MA SC75

Related Product By Brand

MURF860G
MURF860G
onsemi
DIODE GEN PURP 600V 8A TO220FP
1N5353BRLG
1N5353BRLG
onsemi
DIODE ZENER 16V 5W AXIAL
MMBZ5244BLT1G
MMBZ5244BLT1G
onsemi
DIODE ZENER 14V 225MW SOT23-3
BZX84C24ET1G
BZX84C24ET1G
onsemi
DIODE ZENER 24V 225MW SOT23-3
2SC3646S-TD-E
2SC3646S-TD-E
onsemi
TRANS NPN 100V 1A PCP
2SD1628G-TD-E
2SD1628G-TD-E
onsemi
TRANS NPN 20V 5A PCP
FCMT125N65S3
FCMT125N65S3
onsemi
MOSFET N-CH 650V 24A 4PQFN
NVHL025N65S3
NVHL025N65S3
onsemi
MOSFET N-CH 650V 75A TO247-3
MC100EP16VBDTG
MC100EP16VBDTG
onsemi
IC RCVR/DRVR ECL DIFF 5V 8TSSOP
LC898121XA-MH
LC898121XA-MH
onsemi
IC MOTOR DRVR 2.6V-3.6V 40WLCSP
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCV7707DQCR2G
NCV7707DQCR2G
onsemi
IC DOOR MODULE DRIVER 36SSOP