FDY102PZ
  • Share:

onsemi FDY102PZ

Manufacturer No:
FDY102PZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 830MA SC89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDY102PZ is a P-Channel MOSFET produced by onsemi, designed using an advanced Power Trench process. This small signal MOSFET is optimized for low on-resistance (rDS(on)) at a gate-source voltage (VGS) of –1.5 V, making it suitable for a variety of applications requiring efficient power management.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
ID (Drain Current)830 mA (at Ta)
PD (Power Dissipation)625 mW (at Ta)
rDS(on) (On-Resistance)0.5 Ω @ VGS = –4.5 V, ID = 0.83 A
VGS(th) (Threshold Voltage)400 mV @ ID = 250 μA
PackageSC-89-3 (Surface Mount)
RoHS ComplianceYes

Key Features

  • Low on-resistance (rDS(on)) for efficient power management.
  • Advanced Power Trench process for improved performance.
  • P-Channel configuration suitable for various switching and power management applications.
  • Compact SC-89-3 surface mount package for space-efficient designs.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The FDY102PZ is versatile and can be used in a range of applications, including:

  • Brushless DC motor control.
  • Power management in portable electronics.
  • Switching circuits in consumer and industrial devices.
  • Low-power DC-DC converters.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDY102PZ?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the maximum drain current (ID) at ambient temperature (Ta)?
    The maximum drain current (ID) at ambient temperature (Ta) is 830 mA.
  3. What is the on-resistance (rDS(on)) at VGS = –4.5 V and ID = 0.83 A?
    The on-resistance (rDS(on)) is 0.5 Ω.
  4. What is the threshold voltage (VGS(th)) at ID = 250 μA?
    The threshold voltage (VGS(th)) is 400 mV.
  5. What is the package type of the FDY102PZ?
    The package type is SC-89-3 (Surface Mount).
  6. Is the FDY102PZ RoHS compliant?
    Yes, the FDY102PZ is RoHS compliant.
  7. What are some typical applications of the FDY102PZ?
    Typical applications include brushless DC motor control, power management in portable electronics, switching circuits in consumer and industrial devices, and low-power DC-DC converters.
  8. What is the power dissipation (PD) at ambient temperature (Ta)?
    The power dissipation (PD) at ambient temperature (Ta) is 625 mW.
  9. Why is the FDY102PZ designed using an advanced Power Trench process?
    The FDY102PZ is designed using an advanced Power Trench process to optimize the on-resistance (rDS(on)) and improve overall performance.
  10. Where can I find detailed specifications and datasheets for the FDY102PZ?
    Detailed specifications and datasheets can be found on the onsemi website, Digi-Key, and other authorized distributors.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:830mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:500mOhm @ 830mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.1 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:135 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-3
Package / Case:SC-89, SOT-490
0 Remaining View Similar

In Stock

$0.53
657

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDY102PZ FDY100PZ FDY101PZ
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 830mA (Ta) 350mA (Ta) 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 500mOhm @ 830mA, 4.5V 1.2Ohm @ 350mA, 4.5V 8Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.1 nC @ 4.5 V 1.4 nC @ 4.5 V 1.4 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 135 pF @ 10 V 100 pF @ 10 V 100 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-89-3 SC-89-3 SC-89-3
Package / Case SC-89, SOT-490 SC-89, SOT-490 SC-89, SOT-490

Related Product By Categories

FDD86102LZ
FDD86102LZ
onsemi
MOSFET N-CH 100V 8A/35A DPAK
IXFH60N65X2-4
IXFH60N65X2-4
IXYS
MOSFET N-CH 650V 60A TO247-4L
STP19NF20
STP19NF20
STMicroelectronics
MOSFET N-CH 200V 15A TO220AB
FDP032N08B-F102
FDP032N08B-F102
onsemi
MOSFET N-CH 80V 120A TO220-3
BSS84-TP
BSS84-TP
Micro Commercial Co
MOSFET P-CH 50V 130MA SOT23
FDY102PZ
FDY102PZ
onsemi
MOSFET P-CH 20V 830MA SC89-3
FDD86250-F085
FDD86250-F085
onsemi
MOSFET N-CH 150V 50A TO252
IRF3710PBF
IRF3710PBF
Infineon Technologies
MOSFET N-CH 100V 57A TO220AB
STP3NK90Z
STP3NK90Z
STMicroelectronics
MOSFET N-CH 900V 3A TO220AB
STH275N8F7-2AG
STH275N8F7-2AG
STMicroelectronics
MOSFET N-CH 80V 180A H2PAK-2
STP3NK80Z
STP3NK80Z
STMicroelectronics
MOSFET N-CH 800V 2.5A TO220AB
IRF7416TRPBF-1
IRF7416TRPBF-1
Infineon Technologies
MOSFET P-CH 30V 10A 8SO

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
MR2835SKG
MR2835SKG
onsemi
TVS DIODE 23VWM TOP CAN
SBRS81100T3G
SBRS81100T3G
onsemi
DIODE SCHOTTKY 100V 1A SMB
1SMA5942BT3G
1SMA5942BT3G
onsemi
DIODE ZENER 51V 1.5W SMA
1SMB5934BT3G
1SMB5934BT3G
onsemi
DIODE ZENER 24V 3W SMB
DTC114TM3T5G
DTC114TM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
NVD5407NT4G
NVD5407NT4G
onsemi
MOSFET N-CH 40V 7.6A/38A DPAK
MC74AC14DTR2G
MC74AC14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NL37WZ04USG
NL37WZ04USG
onsemi
IC INVERTER 3CH 3-INP US8
NCP1252ADR2G
NCP1252ADR2G
onsemi
IC OFFLINE SWITCH MULT TOP 8SOIC
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN
MC33375ST-3.0T3G
MC33375ST-3.0T3G
onsemi
IC REG LINEAR 3V 300MA SOT223