FDY102PZ
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onsemi FDY102PZ

Manufacturer No:
FDY102PZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 20V 830MA SC89-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The FDY102PZ is a P-Channel MOSFET produced by onsemi, designed using an advanced Power Trench process. This small signal MOSFET is optimized for low on-resistance (rDS(on)) at a gate-source voltage (VGS) of –1.5 V, making it suitable for a variety of applications requiring efficient power management.

Key Specifications

ParameterValue
VDS (Drain-Source Voltage)20 V
ID (Drain Current)830 mA (at Ta)
PD (Power Dissipation)625 mW (at Ta)
rDS(on) (On-Resistance)0.5 Ω @ VGS = –4.5 V, ID = 0.83 A
VGS(th) (Threshold Voltage)400 mV @ ID = 250 μA
PackageSC-89-3 (Surface Mount)
RoHS ComplianceYes

Key Features

  • Low on-resistance (rDS(on)) for efficient power management.
  • Advanced Power Trench process for improved performance.
  • P-Channel configuration suitable for various switching and power management applications.
  • Compact SC-89-3 surface mount package for space-efficient designs.
  • RoHS compliant, ensuring environmental sustainability.

Applications

The FDY102PZ is versatile and can be used in a range of applications, including:

  • Brushless DC motor control.
  • Power management in portable electronics.
  • Switching circuits in consumer and industrial devices.
  • Low-power DC-DC converters.

Q & A

  1. What is the maximum drain-source voltage (VDS) of the FDY102PZ?
    The maximum drain-source voltage (VDS) is 20 V.
  2. What is the maximum drain current (ID) at ambient temperature (Ta)?
    The maximum drain current (ID) at ambient temperature (Ta) is 830 mA.
  3. What is the on-resistance (rDS(on)) at VGS = –4.5 V and ID = 0.83 A?
    The on-resistance (rDS(on)) is 0.5 Ω.
  4. What is the threshold voltage (VGS(th)) at ID = 250 μA?
    The threshold voltage (VGS(th)) is 400 mV.
  5. What is the package type of the FDY102PZ?
    The package type is SC-89-3 (Surface Mount).
  6. Is the FDY102PZ RoHS compliant?
    Yes, the FDY102PZ is RoHS compliant.
  7. What are some typical applications of the FDY102PZ?
    Typical applications include brushless DC motor control, power management in portable electronics, switching circuits in consumer and industrial devices, and low-power DC-DC converters.
  8. What is the power dissipation (PD) at ambient temperature (Ta)?
    The power dissipation (PD) at ambient temperature (Ta) is 625 mW.
  9. Why is the FDY102PZ designed using an advanced Power Trench process?
    The FDY102PZ is designed using an advanced Power Trench process to optimize the on-resistance (rDS(on)) and improve overall performance.
  10. Where can I find detailed specifications and datasheets for the FDY102PZ?
    Detailed specifications and datasheets can be found on the onsemi website, Digi-Key, and other authorized distributors.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:830mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:500mOhm @ 830mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.1 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:135 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):625mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SC-89-3
Package / Case:SC-89, SOT-490
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Similar Products

Part Number FDY102PZ FDY100PZ FDY101PZ
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 830mA (Ta) 350mA (Ta) 150mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.8V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 500mOhm @ 830mA, 4.5V 1.2Ohm @ 350mA, 4.5V 8Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1.5V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.1 nC @ 4.5 V 1.4 nC @ 4.5 V 1.4 nC @ 4.5 V
Vgs (Max) ±8V ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 135 pF @ 10 V 100 pF @ 10 V 100 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 625mW (Ta) 625mW (Ta) 625mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package SC-89-3 SC-89-3 SC-89-3
Package / Case SC-89, SOT-490 SC-89, SOT-490 SC-89, SOT-490

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