BSS84AKM,315
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Nexperia USA Inc. BSS84AKM,315

Manufacturer No:
BSS84AKM,315
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
MOSFET P-CH 50V 230MA DFN1006-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The BSS84AKM,315 is a P-channel enhancement mode Field-Effect Transistor (FET) produced by Nexperia USA Inc. This MOSFET is designed for high-performance applications and is known for its excellent voltage resistance and fast switching capabilities. It is packaged in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package, making it suitable for a wide range of electronic devices and integrated circuits.

Key Specifications

Parameter Value Unit
Drain to Source Voltage (Vdss) 50 V
Continuous Drain Current (Id) @ 25°C 230 mA
Gate to Source Voltage (Vgs) ±20 V
Threshold Voltage (Vgs(th)) @ Id 2.1 V @ 250µA
On Resistance (Rds On) @ Id, Vgs 7.5 Ω @ 100mA, 10V
Gate Charge (Qg) @ Vgs 0.35 nC @ 5V
Input Capacitance (Ciss) @ Vds 36 pF @ 25V
Maximum Power Dissipation (Pd) 340mW (Ta), 2.7W (Tc) mW/W
Operating Temperature Range (TJ) -55°C ~ 150°C °C
Package Type SOT883 (SC-101)

Key Features

  • High Voltage Resistance: The BSS84AKM,315 can withstand a drain to source voltage of up to 50V, ensuring safe operation in high voltage applications.
  • Fast Switching: With a driving voltage of 10V, this MOSFET achieves fast and stable switching operations.
  • Low On Resistance: The on resistance (Rds On) is 7.5 Ω @ 100mA, 10V, which helps reduce energy consumption and heat in the circuit.
  • Low Gate Charge: The gate charge (Qg) is 0.35 nC @ 5V, enhancing switching speed and reducing power consumption.
  • Compact Packaging: The SOT883 (SC-101) package is ultra small and leadless, making it ideal for space-constrained designs and mass production.
  • Wide Operating Temperature Range: The MOSFET operates within a temperature range of -55°C to 150°C, making it suitable for various application scenarios.

Applications

  • Motor Control: Used in motor control circuits for applications such as variable frequency drives (VFDs), robotics, and electric vehicles.
  • Switching Devices: Employed as switching devices in digital and analog circuits, including data switches and multiplexers.
  • Power Management: Utilized in power management circuits to efficiently control and manage power in various electronic systems.

Q & A

  1. What is the maximum drain to source voltage (Vdss) of the BSS84AKM,315 MOSFET?

    The maximum drain to source voltage (Vdss) is 50V.

  2. What is the continuous drain current (Id) at 25°C for the BSS84AKM,315?

    The continuous drain current (Id) at 25°C is 230mA.

  3. What is the threshold voltage (Vgs(th)) of the BSS84AKM,315?

    The threshold voltage (Vgs(th)) is 2.1V @ 250µA.

  4. What is the on resistance (Rds On) of the BSS84AKM,315?

    The on resistance (Rds On) is 7.5 Ω @ 100mA, 10V.

  5. What is the gate charge (Qg) of the BSS84AKM,315?

    The gate charge (Qg) is 0.35 nC @ 5V.

  6. What is the input capacitance (Ciss) of the BSS84AKM,315?

    The input capacitance (Ciss) is 36 pF @ 25V.

  7. What is the maximum power dissipation (Pd) of the BSS84AKM,315?

    The maximum power dissipation (Pd) is 340mW (Ta), 2.7W (Tc).

  8. What is the operating temperature range of the BSS84AKM,315?

    The operating temperature range is -55°C to 150°C.

  9. What package type does the BSS84AKM,315 use?

    The package type is SOT883 (SC-101).

  10. In which applications is the BSS84AKM,315 commonly used?

    The BSS84AKM,315 is commonly used in motor control, switching devices, and power management applications.

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):50 V
Current - Continuous Drain (Id) @ 25°C:230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id:2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.35 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:36 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):340mW (Ta), 2.7W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-883
Package / Case:SC-101, SOT-883
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Similar Products

Part Number BSS84AKM,315 BSS84AKMB,315
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 230mA (Ta) 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 7.5Ohm @ 100mA, 10V 7.5Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.35 nC @ 5 V 0.35 nC @ 5 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 36 pF @ 25 V 36 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 340mW (Ta), 2.7W (Tc) 360mW (Ta), 2.7W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-883 DFN1006B-3
Package / Case SC-101, SOT-883 3-XFDFN

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