PDTD123YT/APGR
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Nexperia USA Inc. PDTD123YT/APGR

Manufacturer No:
PDTD123YT/APGR
Manufacturer:
Nexperia USA Inc.
Package:
Bulk
Description:
PDTD123YT/APGR
Delivery:
Payment:
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iso45001
iso9001
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Product Introduction

Overview

The PDTD123YT/APGR is an NPN resistor-equipped transistor produced by Nexperia USA Inc. This component is designed to simplify circuit design by integrating built-in bias resistors, reducing the overall component count and associated costs. It is part of Nexperia's extensive range of semiconductor products, which are widely used in various industrial and consumer applications.

Key Specifications

ParameterValue
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Resistor ValuesR1 = 2.2 kΩ, R2 = 10 kΩ

Key Features

  • Built-in bias resistors (R1 = 2.2 kΩ, R2 = 10 kΩ) to simplify circuit design and reduce component count.
  • Output current capability of up to 500 mA.
  • Reduces pick and place costs due to the integrated resistors.
  • Compact package suitable for various applications where space is limited.

Applications

The PDTD123YT/APGR transistor is versatile and can be used in a variety of applications, including:

  • General-purpose switching and amplification circuits.
  • Automotive systems where reliability and compact design are crucial.
  • Consumer electronics such as audio equipment and home appliances.
  • Industrial control systems and automation.

Q & A

  1. What is the transistor type of the PDTD123YT/APGR?
    The PDTD123YT/APGR is an NPN pre-biased transistor.
  2. What is the maximum collector current of the PDTD123YT/APGR?
    The maximum collector current is 500 mA.
  3. What is the maximum collector-emitter breakdown voltage of the PDTD123YT/APGR?
    The maximum collector-emitter breakdown voltage is 50 V.
  4. Does the PDTD123YT/APGR have built-in resistors?
    Yes, it has built-in bias resistors with values R1 = 2.2 kΩ and R2 = 10 kΩ.
  5. How does the PDTD123YT/APGR simplify circuit design?
    It simplifies circuit design by reducing the need for external bias resistors, thus reducing the overall component count and associated costs.
  6. In what types of applications is the PDTD123YT/APGR commonly used?
    It is commonly used in general-purpose switching and amplification circuits, automotive systems, consumer electronics, and industrial control systems.
  7. What are the benefits of using the PDTD123YT/APGR in terms of manufacturing costs?
    It reduces pick and place costs due to the integrated resistors.
  8. Where can I find detailed specifications for the PDTD123YT/APGR?
    Detailed specifications can be found on the official Nexperia website, as well as on distributor websites such as Digi-Key and TME.
  9. Is the PDTD123YT/APGR suitable for high-power applications?
    No, it is not designed for high-power applications, with a maximum collector current of 500 mA and a maximum collector-emitter breakdown voltage of 50 V.
  10. What is the package type of the PDTD123YT/APGR?
    The specific package type is not detailed here, but it is typically available in compact packages suitable for surface mount technology (SMT).

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):500 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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