Overview
The MMUN2232LT1G is a digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistor bias networks, thereby reducing system cost and board space. The MMUN2232LT1G is part of the Bias Resistor Transistor (BRT) series, which includes various packages such as SOT-23, among others. Although this device is discontinued and not recommended for new designs, it remains relevant for existing applications and maintenance purposes.
Key Specifications
| Characteristic | Symbol | Unit | Max Value |
|---|---|---|---|
| Total Device Dissipation (TA = 25°C) | PD | mW | 246 |
| Derate above 25°C | - | mW/°C | 2.0 |
| Thermal Resistance, Junction to Ambient | RθJA | °C/W | 508 |
| Thermal Resistance, Junction to Lead | RθJL | °C/W | 174 |
| Junction and Storage Temperature Range | TJ, Tstg | °C | −55 to +150 |
| DC Current Gain (IC = 5.0 mA, VCE = 10 V) | hFE | - | 15 to 30 |
| Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 1.0 mA) | VCE(sat) | Vdc | 0.25 |
| Input Voltage (off) (VCE = 5.0 V, IC = 100 μA) | Vi(off) | Vdc | 1.2 |
| Input Voltage (on) (VCE = 0.3 V, IC = 20 mA) | Vi(on) | Vdc | 2.5 |
| Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) | VOL | Vdc | 0.2 |
| Output Voltage (off) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) | VOH | Vdc | 4.9 |
| Input Resistor R1 | - | kΩ | 3.3 to 4.7 |
| Resistor Ratio R1/R2 | - | - | 0.8 to 1.2 |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
- Reduces Board Space: Compact SOT-23 package minimizes the footprint on the PCB.
- Reduces Component Count: Combines multiple components into a single device, simplifying inventory and assembly.
- Pb-Free Package: Compliant with lead-free requirements, making it suitable for environmentally friendly designs.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring high reliability and quality standards.
Applications
- Automotive Systems: Given its AEC-Q101 qualification, it is suitable for various automotive applications where reliability and robustness are critical.
- Consumer Electronics: Can be used in a variety of consumer electronic devices where space and component count are concerns.
- Industrial Control Systems: Applicable in industrial control circuits where simplicity and reliability of the transistor are essential.
- General Purpose Switching: Suitable for general-purpose switching applications where a compact, integrated transistor is beneficial.
Q & A
- What is the MMUN2232LT1G?
The MMUN2232LT1G is a digital transistor with a monolithic bias resistor network, designed to simplify circuit design and reduce board space.
- Why is the MMUN2232LT1G discontinued?
The MMUN2232LT1G is discontinued and not recommended for new designs. However, it may still be used for existing applications and maintenance purposes.
- What package type does the MMUN2232LT1G come in?
The MMUN2232LT1G comes in a SOT-23 package.
- What are the thermal characteristics of the MMUN2232LT1G?
The device has a total device dissipation of 246 mW at 25°C, with a thermal resistance (Junction to Ambient) of 508 °C/W.
- What is the DC current gain of the MMUN2232LT1G?
The DC current gain (hFE) is between 15 and 30 at IC = 5.0 mA and VCE = 10 V.
- What is the collector-emitter saturation voltage of the MMUN2232LT1G?
The collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc at IC = 10 mA and IB = 1.0 mA.
- Is the MMUN2232LT1G Pb-free?
Yes, the MMUN2232LT1G is available in a Pb-free package.
- What are some typical applications of the MMUN2232LT1G?
It is suitable for automotive systems, consumer electronics, industrial control systems, and general-purpose switching applications.
- Is the MMUN2232LT1G AEC-Q101 qualified?
Yes, the MMUN2232LT1G is AEC-Q101 qualified and PPAP capable.
- What is the input resistor R1 value for the MMUN2232LT1G?
The input resistor R1 value ranges from 3.3 kΩ to 4.7 kΩ.
