Overview
The MMUN2230LT1G is a digital transistor from onsemi, part of their Bias Resistor Transistor (BRT) series. This device is designed to integrate a single transistor with a monolithic bias resistor network, consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and minimizes the component count. The MMUN2230LT1G is available in a SOT-23 package and is Pb-free, making it suitable for various applications, including automotive and other environments requiring unique site and control change requirements.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nA |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nA |
| Emitter-Base Cutoff Current | IEBO | - | - | 4.3 | mA |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | V |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | V |
| DC Current Gain | hFE | 3.0 | 5.0 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | V |
| Input Resistor R1 | R1 | 0.7 | 1.0 | 1.3 | kΩ |
| Resistor Ratio R1/R2 | R1/R2 | 0.8 | 1.0 | 1.2 | - |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 508 | °C/W |
| Thermal Resistance, Junction to Lead | RθJL | - | - | 174 | °C/W |
Key Features
- Simplified Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external resistors.
- Reduced Board Space: Compact SOT-23 package minimizes board real estate.
- Component Count Reduction: Combines multiple components into a single device, simplifying the overall design.
- Pb-Free Package: Suitable for applications requiring lead-free components.
- AEC-Q101 Qualified and PPAP Capable: Meets automotive and other stringent application requirements.
Applications
- Automotive Systems: Suitable for various automotive applications due to its AEC-Q101 qualification and PPAP capability.
- Industrial Control Systems: Used in industrial control circuits where compact and reliable transistor solutions are required.
- Consumer Electronics: Applicable in consumer electronics for general-purpose switching and amplification needs.
- Medical Devices: Can be used in medical devices where space and component count are critical factors.
Q & A
- What is the MMUN2230LT1G?
The MMUN2230LT1G is a digital transistor with a monolithic bias resistor network from onsemi.
- What package type does the MMUN2230LT1G come in?
The MMUN2230LT1G is available in a SOT-23 package.
- What are the key benefits of using the MMUN2230LT1G?
It simplifies circuit design, reduces board space, and minimizes component count.
- Is the MMUN2230LT1G Pb-free?
Yes, the MMUN2230LT1G is Pb-free, making it suitable for lead-free applications.
- What is the DC current gain of the MMUN2230LT1G?
The DC current gain (hFE) is 3.0 to 5.0.
- What is the collector-emitter saturation voltage of the MMUN2230LT1G?
The collector-emitter saturation voltage (VCE(sat)) is up to 0.25 V.
- What is the thermal resistance, junction to ambient, of the MMUN2230LT1G?
The thermal resistance, junction to ambient (RθJA), is up to 508 °C/W.
- What is the junction and storage temperature range of the MMUN2230LT1G?
The junction and storage temperature range (TJ, Tstg) is -55 to 150 °C.
- Is the MMUN2230LT1G AEC-Q101 qualified?
Yes, the MMUN2230LT1G is AEC-Q101 qualified and PPAP capable.
- What are some common applications of the MMUN2230LT1G?
It is used in automotive systems, industrial control systems, consumer electronics, and medical devices.
