Overview
The MUN5111T1G is a PNP pre-biased digital transistor manufactured by onsemi. This component is part of the Bipolar Resistor Transistor (BRT) family and is designed for use in a variety of digital and analog applications. The transistor features integrated base resistors, simplifying circuit design and reducing component count. It is packaged in a compact SC-70-3 (SOT323) package, making it suitable for space-constrained designs.
Key Specifications
| Parameter | Value |
|---|---|
| Transistor Type | PNP Pre-Biased |
| Continuous Collector Current (Ic) | 100 mA |
| Peak DC Collector Current (Ic) | 100 mA |
| Voltage - Collector Emitter Breakdown (Vceo) | 50 V |
| Power Dissipation (Pd) | 202 mW |
| Minimum Operating Temperature | -55°C |
| Base Resistors (R1, R2) | 10 kΩ each |
| Package Type | SC-70-3 (SOT323) |
Key Features
- PNP pre-biased transistor with integrated base resistors (R1 = 10 kΩ, R2 = 10 kΩ)
- Compact SC-70-3 (SOT323) package for space-saving designs
- Collector current up to 100 mA and collector-emitter voltage up to 50 V
- Low power dissipation of 202 mW
- Operating temperature range from -55°C to 150°C
- ROHS compliant
Applications
The MUN5111T1G is suitable for a wide range of applications, including digital circuits, analog circuits, and general-purpose switching. It is particularly useful in designs where space is limited due to its compact packaging. Common uses include:
- Digital logic circuits
- Analog signal processing
- Low-power switching applications
- Automotive and industrial control systems
Q & A
- What is the maximum collector current of the MUN5111T1G?
The maximum collector current is 100 mA. - What is the collector-emitter breakdown voltage of the MUN5111T1G?
The collector-emitter breakdown voltage is 50 V. - What type of package does the MUN5111T1G use?
The MUN5111T1G is packaged in a SC-70-3 (SOT323) package. - What are the values of the integrated base resistors in the MUN5111T1G?
The integrated base resistors are 10 kΩ each. - Is the MUN5111T1G ROHS compliant?
Yes, the MUN5111T1G is ROHS compliant. - What is the power dissipation of the MUN5111T1G?
The power dissipation is 202 mW. - What is the minimum operating temperature of the MUN5111T1G?
The minimum operating temperature is -55°C. - What type of transistor is the MUN5111T1G?
The MUN5111T1G is a PNP pre-biased transistor. - Where can the MUN5111T1G be used?
The MUN5111T1G can be used in digital logic circuits, analog signal processing, low-power switching applications, and automotive and industrial control systems. - Why is the MUN5111T1G beneficial in circuit design?
The MUN5111T1G simplifies circuit design by integrating base resistors, reducing the need for external components and saving space.
