DTA114EET1G
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onsemi DTA114EET1G

Manufacturer No:
DTA114EET1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V 100MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The DTA114EET1G is a digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistors, thereby reducing both system cost and board space. It is part of the DTA114EE series, which includes various packages and configurations to suit different application needs.

Key Specifications

Parameter Value Unit
Configuration PNP - Pre-Biased
Maximum Collector Base Voltage 50 V
Maximum Collector Current 100 mA
Maximum Collector Emitter Breakdown Voltage 50 V
Maximum Collector Emitter Saturation Voltage 250 mV @ 300 µA, 10 mA V
Maximum Cutoff Collector Current 500 nA
Maximum Junction Temperature 150 °C
Maximum Power Dissipation 200 mW
Minimum DC Current Gain 35 @ 5 mA, 10 V
Base Resistance - R1 10 kΩ
Emitter Base Resistance - R2 10 kΩ
Package Type SC-75, SOT-523
Resistor Ratio R1/R2 1

Key Features

  • Simplified Circuit Design: The DTA114EET1G integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
  • Reduced Board Space: By combining multiple components into one, this device minimizes the space required on the PCB.
  • Component Count Reduction: Eliminates the need for separate resistors, simplifying the overall design and reducing component count.
  • ROHS and Reach Compliance: The device is compliant with ROHS (2015/863) and Reach regulations, ensuring environmental sustainability.
  • Wide Operating Temperature Range: Operates from -55°C to 150°C, making it suitable for a variety of applications.

Applications

The DTA114EET1G is suitable for various applications where a compact, integrated transistor solution is required. These include:

  • Automotive Systems: Given its robust operating temperature range and compliance with automotive standards, it is ideal for automotive electronics.
  • Consumer Electronics: Used in devices such as smartphones, tablets, and other portable electronics where space is a premium.
  • Industrial Control Systems: Suitable for use in industrial control circuits where reliability and compactness are essential.
  • Medical Devices: Can be used in medical equipment due to its reliability and compliance with stringent regulations.

Q & A

  1. What is the maximum collector current of the DTA114EET1G?

    The maximum collector current is 100 mA.

  2. What is the package type of the DTA114EET1G?

    The package type is SC-75, SOT-523.

  3. Is the DTA114EET1G ROHS compliant?

    Yes, the device is ROHS (2015/863) compliant.

  4. What is the resistor ratio R1/R2 in the DTA114EET1G?

    The resistor ratio R1/R2 is 1.

  5. What is the maximum junction temperature of the DTA114EET1G?

    The maximum junction temperature is 150°C.

  6. What is the minimum DC current gain of the DTA114EET1G?

    The minimum DC current gain is 35 @ 5 mA, 10 V.

  7. Can the DTA114EET1G be used in automotive applications?

    Yes, it is suitable for automotive systems due to its robust operating temperature range and compliance with automotive standards.

  8. How does the DTA114EET1G simplify circuit design?

    It integrates a single transistor with a monolithic bias resistor network, eliminating the need for external resistors.

  9. What is the maximum power dissipation of the DTA114EET1G?

    The maximum power dissipation is 200 mW.

  10. Is the DTA114EET1G available in tape and reel packaging?

    Yes, it is available in tape and reel packaging with a quantity of 3000 pieces per reel.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
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Similar Products

Part Number DTA114EET1G DTA114YET1G DTA114TET1G DTA115EET1G DTA113EET1G DTA114EET1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Obsolete Active Active Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V -
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms 100 kOhms 1 kOhms -
Resistor - Emitter Base (R2) 10 kOhms 47 kOhms - 100 kOhms 1 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 3 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA -
Frequency - Transition - - - - - -
Power - Max 200 mW 200 mW 200 mW 200 mW 200 mW -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 -
Supplier Device Package SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 -

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