DTC114EM3T5G
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onsemi DTC114EM3T5G

Manufacturer No:
DTC114EM3T5G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V SOT723
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The DTC114EM3T5G is a digital transistor from onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistor bias networks, thereby reducing both system cost and board space. It is part of the DTC114E series, which includes various configurations to meet different application requirements.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO - - 100 nA
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO - - 500 nA
Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) - - - - nA
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) VOH 4.9 - - Vdc
Collector Current IC - - 100 mA
Collector-Emitter Saturation Voltage (VCE(sat)) VCE(sat) - - - V
Maximum Collector-Emitter Voltage VCE - - 50 V
Total Device Dissipation (TA = 25°C) PD - - 254 mW
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C

Key Features

  • Simplified Circuit Design: Integrates a single transistor with a monolithic bias resistor network, eliminating the need for external resistors.
  • Reduced Board Space: Compact SOT-723-3 package reduces the overall footprint of the circuit.
  • Component Count Reduction: Combines multiple components into a single device, reducing the total component count.
  • AEC-Q101 Qualified: Suitable for automotive and other applications requiring unique site and control change requirements.
  • PPAP Capable: Supports Production Part Approval Process (PPAP) for automotive applications.

Applications

  • Automotive Systems: Ideal for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Industrial Control Systems: Suitable for various industrial control applications where compact and reliable transistor solutions are required.
  • Consumer Electronics: Can be used in consumer electronics to simplify circuit design and reduce component count.
  • Medical Devices: Applicable in medical devices where space and reliability are critical factors.

Q & A

  1. What is the DTC114EM3T5G used for?

    The DTC114EM3T5G is a digital transistor used to replace a single device and its external resistor bias network, simplifying circuit design and reducing board space.

  2. What is the maximum collector current of the DTC114EM3T5G?

    The maximum collector current is 100 mA.

  3. What is the maximum collector-emitter voltage of the DTC114EM3T5G?

    The maximum collector-emitter voltage is 50 V.

  4. Is the DTC114EM3T5G AEC-Q101 qualified?

    Yes, the DTC114EM3T5G is AEC-Q101 qualified, making it suitable for automotive applications.

  5. What is the package type of the DTC114EM3T5G?

    The DTC114EM3T5G comes in a SOT-723-3 package.

  6. What is the junction and storage temperature range of the DTC114EM3T5G?

    The junction and storage temperature range is -55°C to 150°C.

  7. What are the benefits of using a monolithic bias resistor network in the DTC114EM3T5G?

    The monolithic bias resistor network simplifies circuit design, reduces board space, and decreases the overall component count.

  8. Can the DTC114EM3T5G be used in industrial control systems?

    Yes, the DTC114EM3T5G is suitable for use in industrial control systems due to its reliability and compact design.

  9. Is the DTC114EM3T5G RoHS compliant?

    Yes, the DTC114EM3T5G is RoHS compliant.

  10. What is the total device dissipation of the DTC114EM3T5G at 25°C?

    The total device dissipation at 25°C is 254 mW.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:260 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:SOT-723
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Similar Products

Part Number DTC114EM3T5G DTC114TM3T5G DTC115EM3T5G DTC114YM3T5G DTC113EM3T5G
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 100 kOhms 10 kOhms 1 kOhms
Resistor - Emitter Base (R2) 10 kOhms - 100 kOhms 47 kOhms 1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 3 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - -
Power - Max 260 mW 260 mW 260 mW 260 mW 260 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SOT-723 SOT-723 SOT-723 SOT-723 SOT-723
Supplier Device Package SOT-723 SOT-723 SOT-723 SOT-723 SOT-723

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