MUN2211T1G
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onsemi MUN2211T1G

Manufacturer No:
MUN2211T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V 100MA SC59
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN2211T1G is a NPN Digital Transistor with a monolithic bias resistor network, designed by onsemi to replace a single device and its external resistor bias network. This Bias Resistor Transistor (BRT) integrates a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base emitter resistor. This integration simplifies circuit design, reduces board space, and minimizes component count.

Key Specifications

Parameter Value
Transistor Polarity Single NPN
Collector Emitter Voltage Max (NPN) 50V
Continuous Collector Current 100mA
Base Input Resistor (R1) 10kohm
Base Emitter Resistor (R2) 10kohm
Transistor Case Style SC-59
Transistor Mounting Surface Mount
No. of Pins 3 Pin
Power Dissipation 338mW
Operating Temperature Max 150°C
DC Current Gain hFE Min 35hFE
Minimum Operating Temperature -55°C

Key Features

  • Simplifies circuit design by integrating the transistor and bias resistors into a single device.
  • Reduces board space due to the compact SC-59 package.
  • Minimizes component count, reducing the complexity of the circuit.
  • Surface mount technology for easy integration into modern PCB designs.

Applications

The MUN2211T1G is suitable for various applications, including:

  • Industrial automation and control systems.
  • Automotive electronics, such as in vehicle control and sensing circuits.
  • Power management systems, where compact and efficient transistor solutions are required.

Q & A

  1. What is the MUN2211T1G?

    The MUN2211T1G is a NPN Digital Transistor with a monolithic bias resistor network designed by onsemi.

  2. What are the key benefits of using the MUN2211T1G?

    It simplifies circuit design, reduces board space, and minimizes component count.

  3. What is the maximum collector-emitter voltage for the MUN2211T1G?

    The maximum collector-emitter voltage is 50V.

  4. What is the continuous collector current of the MUN2211T1G?

    The continuous collector current is 100mA.

  5. What are the values of the base input and base emitter resistors?

    Both the base input resistor (R1) and the base emitter resistor (R2) are 10kohm each.

  6. What is the case style and mounting type of the MUN2211T1G?

    The case style is SC-59, and it is a surface mount device.

  7. What is the maximum operating temperature of the MUN2211T1G?

    The maximum operating temperature is 150°C.

  8. What is the minimum DC current gain (hFE) of the MUN2211T1G?

    The minimum DC current gain (hFE) is 35.

  9. Is the MUN2211T1G RoHS compliant?
  10. What are some common applications of the MUN2211T1G?

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:230 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SC-59
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Part Number MUN2211T1G MUN2211T3G MUN2212T1G MUN2213T1G MUN2216T1G MUN2214T1G MUN5211T1G MUN2231T1G MUN2241T1G MUN2215T1G MUN2111T1G MUN2211JT1G MUN2211T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Active Active Obsolete Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 22 kOhms 47 kOhms 4.7 kOhms 10 kOhms 10 kOhms 2.2 kOhms 100 kOhms 10 kOhms 10 kOhms 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms 22 kOhms 47 kOhms - 47 kOhms 10 kOhms 2.2 kOhms - - 10 kOhms 10 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 8 @ 5mA, 10V 160 @ 5mA, 10V 160 @ 5mA, 10V 35 @ 5mA, 10V 35 @ 5mA, 10V 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 5mA, 10mA 250mV @ 5mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - - - - - -
Power - Max 230 mW 230 mW 338 mW 338 mW 338 mW 230 mW 202 mW 338 mW 338 mW 338 mW 230 mW 230 mW 338 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59 SC-59 SC-59 SC-59 SC-59 SC-59 SC-70-3 (SOT323) SC-59 SC-59 SC-59 SC-59 SC-59 SC-59

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