Overview
The MUN2213T1G is a digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistor bias networks, thereby reducing both system cost and board space. The MUN2213T1G is part of a series of digital transistors that include various package options, making it versatile for different application requirements.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.1 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 80 | 140 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
| Input Voltage (off) | Vi(off) | - | 1.2 | 0.8 | Vdc |
| Input Voltage (on) | Vi(on) | 3.0 | 1.6 | - | Vdc |
| Input Resistor R1 | R1 | 32.9 | 47 | 61.1 | kΩ |
| Resistor Ratio R1/R2 | R1/R2 | 0.8 | 1.0 | 1.2 | - |
| Total Device Dissipation (TA = 25°C) | PD | 230 | - | - | mW |
| Thermal Resistance, Junction to Ambient | RθJA | 540 | - | - | °C/W |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
- Reduces Board Space: Compact package options such as SC-59, SOT-23, and SC-70/SOT-323 reduce the overall footprint on the PCB.
- Reduces Component Count: By integrating the bias resistors into the transistor, it minimizes the number of discrete components required.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
- Pb-Free Packages: Available in lead-free packages to comply with environmental regulations.
Applications
- Automotive Systems: AEC-Q101 qualified, making it suitable for various automotive applications.
- Consumer Electronics: Ideal for use in consumer electronics due to its compact size and simplified circuit design.
- Industrial Control Systems: Can be used in industrial control systems where space and component count are critical.
- General Purpose Switching: Suitable for general-purpose switching applications where a compact, integrated solution is required.
Q & A
- What is the MUN2213T1G?
The MUN2213T1G is a digital transistor with a monolithic bias resistor network, designed to simplify circuit design and reduce board space.
- What are the key benefits of using the MUN2213T1G?
The key benefits include simplified circuit design, reduced board space, and reduced component count.
- What are the different package options available for the MUN2213T1G?
The device is available in SC-59, SOT-23, SC-70/SOT-323, and other packages.
- Is the MUN2213T1G suitable for automotive applications?
Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
- What is the maximum collector-emitter breakdown voltage of the MUN2213T1G?
The maximum collector-emitter breakdown voltage is 50 Vdc.
- What is the typical DC current gain of the MUN2213T1G?
The typical DC current gain is 140.
- What is the maximum collector-emitter saturation voltage of the MUN2213T1G?
The maximum collector-emitter saturation voltage is 0.25 Vdc.
- What is the input voltage range for the MUN2213T1G when it is in the 'on' state?
The input voltage range for the 'on' state is typically 1.6 Vdc.
- What is the thermal resistance, junction to ambient, for the SC-59 package?
The thermal resistance, junction to ambient, for the SC-59 package is 540 °C/W.
- What is the junction and storage temperature range for the MUN2213T1G?
The junction and storage temperature range is -55°C to 150°C.
