PDTC114ET/DG/B4,21
  • Share:

Nexperia USA Inc. PDTC114ET/DG/B4,21

Manufacturer No:
PDTC114ET/DG/B4,21
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTC114ET/DG/B4,21 is a 50 V, 100 mA NPN resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. This component is part of the PDTC114E series and is packaged in a small SOT23 Surface-Mounted Device (SMD) plastic package. It is designed to simplify circuit design and reduce component count, making it a cost-effective solution for various digital applications.

The transistor features built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ), which help in controlling the biasing of the transistor, ensuring proper operation and stability. It is particularly useful in automotive and industrial segments due to its AEC-Q101 qualification.

Key Specifications

Parameter Value Unit
Type Number PDTC114ET
Package SOT23 (TO-236AB)
Transistor Polarity NPN
Collector-Emitter Voltage (VCEO) 50 V
Collector Current (IC) 100 mA
Power Dissipation (Pd) 250 mW
Junction Temperature (Tj) 150 °C
Bias Resistor 1 (R1) 10 kΩ
Bias Resistor 2 (R2) 10 kΩ
PNP Complement PDTA114ET
AEC-Q101 Qualified Yes

Key Features

  • 100 mA Output Current Capability: Supports a maximum collector current of 100 mA.
  • Built-in Bias Resistors: Features built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ) to simplify circuit design and ensure proper transistor biasing.
  • Simplified Circuit Design: Reduces the need for external resistors, simplifying the overall circuit design.
  • Reduced Component Count: Minimizes the number of components required in the circuit, reducing costs and complexity.
  • Cost-Effective: Offers a cost-saving alternative to other transistor series like the BC847 in digital applications.
  • AEC-Q101 Qualified: Suitable for automotive and industrial applications due to its AEC-Q101 qualification.

Applications

  • Digital Applications in Automotive and Industrial Segments: Ideal for use in automotive and industrial environments due to its robustness and AEC-Q101 qualification.
  • Controlling IC Inputs: Can be used to control inputs to integrated circuits.
  • Switching Loads: Suitable for switching applications where a reliable and efficient transistor is required.
  • LED Drivers and Constant Current Sources: Can be used in LED driver circuits and as constant current sources.

Q & A

  1. What is the maximum collector current of the PDTC114ET transistor?

    The maximum collector current is 100 mA.

  2. What are the values of the built-in bias resistors in the PDTC114ET transistor?

    The built-in bias resistors are R1 = 10 kΩ and R2 = 10 kΩ.

  3. What is the package type of the PDTC114ET transistor?

    The transistor is packaged in a SOT23 (TO-236AB) package.

  4. Is the PDTC114ET transistor AEC-Q101 qualified?

    Yes, the PDTC114ET transistor is AEC-Q101 qualified.

  5. What are the typical applications of the PDTC114ET transistor?

    Typical applications include digital applications in automotive and industrial segments, controlling IC inputs, and switching loads.

  6. What is the maximum junction temperature of the PDTC114ET transistor?

    The maximum junction temperature is 150°C.

  7. What is the power dissipation of the PDTC114ET transistor?

    The power dissipation is 250 mW.

  8. Does the PDTC114ET transistor have a PNP complement?

    Yes, the PNP complement is the PDTA114ET transistor.

  9. How does the PDTC114ET transistor simplify circuit design?

    The transistor simplifies circuit design by reducing the need for external resistors due to its built-in bias resistors.

  10. What are the benefits of using the PDTC114ET transistor in terms of component count and costs?

    The transistor reduces component count and pick-and-place costs, making it a cost-effective solution.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:230 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
0 Remaining View Similar

In Stock

-
439

Please send RFQ , we will respond immediately.

Same Series
DD15S20LVL0
DD15S20LVL0
CONN D-SUB HD RCPT 15P SLDR CUP
CBC47W1S100E30
CBC47W1S100E30
CONN D-SUB RCPT 47POS CRIMP
CBC13W3S10HV50/AA
CBC13W3S10HV50/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S2S0TX
DD26S2S0TX
CONN D-SUB HD RCPT 26P SLDR CUP
CBC47W1S1S50V50
CBC47W1S1S50V50
CONN D-SUB RCPT 47POS CRIMP
DD26S200T20
DD26S200T20
CONN D-SUB HD RCPT 26P SLDR CUP
CBC13W3S10HV3S/AA
CBC13W3S10HV3S/AA
CONN D-SUB RCPT 13POS CRIMP
DD26S10HV50/AA
DD26S10HV50/AA
CONN D-SUB HD RCPT 26POS CRIMP
RD50S1S500S
RD50S1S500S
CONN D-SUB RCPT 50POS CRIMP
DD44S3200V30
DD44S3200V30
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20WT0/AA
DD26S20WT0/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number PDTC114ET/DG/B4,21 PDTC114ET/DG/B2,21
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA
Frequency - Transition 230 MHz 230 MHz
Power - Max 250 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

Related Product By Categories

MUN5114T1G
MUN5114T1G
onsemi
TRANS PREBIAS PNP 50V SC70-3
MUN5111T1G
MUN5111T1G
onsemi
TRANS PREBIAS PNP 50V SC70-3
DTC123JM3T5G
DTC123JM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
SMMUN2113LT1G
SMMUN2113LT1G
onsemi
TRANS PREBIAS PNP 50V SOT23-3
PDTA123JT,215
PDTA123JT,215
Nexperia USA Inc.
TRANS PREBIAS PNP 50V TO236AB
MUN2111T1G
MUN2111T1G
onsemi
TRANS PREBIAS PNP 50V 100MA SC59
NSVMMUN2235LT1G
NSVMMUN2235LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
PDTA144EU,135
PDTA144EU,135
Nexperia USA Inc.
TRANS PREBIAS PNP 200MW SOT323
PDTC114YEF,115
PDTC114YEF,115
NXP USA Inc.
TRANS PREBIAS NPN 250MW SC89
PDTA144EU/ZLX
PDTA144EU/ZLX
Nexperia USA Inc.
PDTA144EU/ZLX
PDTC124EU/ZLF
PDTC124EU/ZLF
Nexperia USA Inc.
PDTC124EU/ZLF
PDTC114ET-QVL
PDTC114ET-QVL
Nexperia USA Inc.
TRANS PREBIAS NPN/PNP

Related Product By Brand

BAT720,235
BAT720,235
Nexperia USA Inc.
DIODE SCHOTTKY 40V 500MA TO236AB
PMEG3015EH,115
PMEG3015EH,115
Nexperia USA Inc.
DIODE SCHOTTKY 30V 1.5A SOD123F
BZT52H-B20,115
BZT52H-B20,115
Nexperia USA Inc.
DIODE ZENER 20V 375MW SOD123F
BZX384-B10,115
BZX384-B10,115
Nexperia USA Inc.
DIODE ZENER 10V 300MW SOD323
PBSS4021PT,215
PBSS4021PT,215
Nexperia USA Inc.
TRANS PNP 20V 3.5A TO236AB
BC857BQB-QZ
BC857BQB-QZ
Nexperia USA Inc.
SMALL SIGNAL BIPOLAR IN DFN PACK
PDTA124EU,135
PDTA124EU,135
Nexperia USA Inc.
NEXPERIA PDTA124EU - SMALL SIGNA
74HC1G66GW-Q100H
74HC1G66GW-Q100H
Nexperia USA Inc.
IC ANLG SWITCH SPST 5TSSOP
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP
74HC11D,653
74HC11D,653
Nexperia USA Inc.
IC GATE AND 3CH 3-INP 14SO
74LVC08ADB,118
74LVC08ADB,118
Nexperia USA Inc.
IC GATE AND 4CH 2-INP 14SSOP
CBTD16210DGG,112
CBTD16210DGG,112
Nexperia USA Inc.
IC BUS SWITCH 10 X 1:1 48TSSOP