PDTC114ET/DG/B4,21
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Nexperia USA Inc. PDTC114ET/DG/B4,21

Manufacturer No:
PDTC114ET/DG/B4,21
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTC114ET/DG/B4,21 is a 50 V, 100 mA NPN resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. This component is part of the PDTC114E series and is packaged in a small SOT23 Surface-Mounted Device (SMD) plastic package. It is designed to simplify circuit design and reduce component count, making it a cost-effective solution for various digital applications.

The transistor features built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ), which help in controlling the biasing of the transistor, ensuring proper operation and stability. It is particularly useful in automotive and industrial segments due to its AEC-Q101 qualification.

Key Specifications

Parameter Value Unit
Type Number PDTC114ET
Package SOT23 (TO-236AB)
Transistor Polarity NPN
Collector-Emitter Voltage (VCEO) 50 V
Collector Current (IC) 100 mA
Power Dissipation (Pd) 250 mW
Junction Temperature (Tj) 150 °C
Bias Resistor 1 (R1) 10
Bias Resistor 2 (R2) 10
PNP Complement PDTA114ET
AEC-Q101 Qualified Yes

Key Features

  • 100 mA Output Current Capability: Supports a maximum collector current of 100 mA.
  • Built-in Bias Resistors: Features built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ) to simplify circuit design and ensure proper transistor biasing.
  • Simplified Circuit Design: Reduces the need for external resistors, simplifying the overall circuit design.
  • Reduced Component Count: Minimizes the number of components required in the circuit, reducing costs and complexity.
  • Cost-Effective: Offers a cost-saving alternative to other transistor series like the BC847 in digital applications.
  • AEC-Q101 Qualified: Suitable for automotive and industrial applications due to its AEC-Q101 qualification.

Applications

  • Digital Applications in Automotive and Industrial Segments: Ideal for use in automotive and industrial environments due to its robustness and AEC-Q101 qualification.
  • Controlling IC Inputs: Can be used to control inputs to integrated circuits.
  • Switching Loads: Suitable for switching applications where a reliable and efficient transistor is required.
  • LED Drivers and Constant Current Sources: Can be used in LED driver circuits and as constant current sources.

Q & A

  1. What is the maximum collector current of the PDTC114ET transistor?

    The maximum collector current is 100 mA.

  2. What are the values of the built-in bias resistors in the PDTC114ET transistor?

    The built-in bias resistors are R1 = 10 kΩ and R2 = 10 kΩ.

  3. What is the package type of the PDTC114ET transistor?

    The transistor is packaged in a SOT23 (TO-236AB) package.

  4. Is the PDTC114ET transistor AEC-Q101 qualified?

    Yes, the PDTC114ET transistor is AEC-Q101 qualified.

  5. What are the typical applications of the PDTC114ET transistor?

    Typical applications include digital applications in automotive and industrial segments, controlling IC inputs, and switching loads.

  6. What is the maximum junction temperature of the PDTC114ET transistor?

    The maximum junction temperature is 150°C.

  7. What is the power dissipation of the PDTC114ET transistor?

    The power dissipation is 250 mW.

  8. Does the PDTC114ET transistor have a PNP complement?

    Yes, the PNP complement is the PDTA114ET transistor.

  9. How does the PDTC114ET transistor simplify circuit design?

    The transistor simplifies circuit design by reducing the need for external resistors due to its built-in bias resistors.

  10. What are the benefits of using the PDTC114ET transistor in terms of component count and costs?

    The transistor reduces component count and pick-and-place costs, making it a cost-effective solution.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:230 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTC114ET/DG/B4,21 PDTC114ET/DG/B2,21
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA
Frequency - Transition 230 MHz 230 MHz
Power - Max 250 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

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