PDTC114ET/DG/B4,21
  • Share:

Nexperia USA Inc. PDTC114ET/DG/B4,21

Manufacturer No:
PDTC114ET/DG/B4,21
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTC114ET/DG/B4,21 is a 50 V, 100 mA NPN resistor-equipped transistor (RET) manufactured by Nexperia USA Inc. This component is part of the PDTC114E series and is packaged in a small SOT23 Surface-Mounted Device (SMD) plastic package. It is designed to simplify circuit design and reduce component count, making it a cost-effective solution for various digital applications.

The transistor features built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ), which help in controlling the biasing of the transistor, ensuring proper operation and stability. It is particularly useful in automotive and industrial segments due to its AEC-Q101 qualification.

Key Specifications

Parameter Value Unit
Type Number PDTC114ET
Package SOT23 (TO-236AB)
Transistor Polarity NPN
Collector-Emitter Voltage (VCEO) 50 V
Collector Current (IC) 100 mA
Power Dissipation (Pd) 250 mW
Junction Temperature (Tj) 150 °C
Bias Resistor 1 (R1) 10
Bias Resistor 2 (R2) 10
PNP Complement PDTA114ET
AEC-Q101 Qualified Yes

Key Features

  • 100 mA Output Current Capability: Supports a maximum collector current of 100 mA.
  • Built-in Bias Resistors: Features built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ) to simplify circuit design and ensure proper transistor biasing.
  • Simplified Circuit Design: Reduces the need for external resistors, simplifying the overall circuit design.
  • Reduced Component Count: Minimizes the number of components required in the circuit, reducing costs and complexity.
  • Cost-Effective: Offers a cost-saving alternative to other transistor series like the BC847 in digital applications.
  • AEC-Q101 Qualified: Suitable for automotive and industrial applications due to its AEC-Q101 qualification.

Applications

  • Digital Applications in Automotive and Industrial Segments: Ideal for use in automotive and industrial environments due to its robustness and AEC-Q101 qualification.
  • Controlling IC Inputs: Can be used to control inputs to integrated circuits.
  • Switching Loads: Suitable for switching applications where a reliable and efficient transistor is required.
  • LED Drivers and Constant Current Sources: Can be used in LED driver circuits and as constant current sources.

Q & A

  1. What is the maximum collector current of the PDTC114ET transistor?

    The maximum collector current is 100 mA.

  2. What are the values of the built-in bias resistors in the PDTC114ET transistor?

    The built-in bias resistors are R1 = 10 kΩ and R2 = 10 kΩ.

  3. What is the package type of the PDTC114ET transistor?

    The transistor is packaged in a SOT23 (TO-236AB) package.

  4. Is the PDTC114ET transistor AEC-Q101 qualified?

    Yes, the PDTC114ET transistor is AEC-Q101 qualified.

  5. What are the typical applications of the PDTC114ET transistor?

    Typical applications include digital applications in automotive and industrial segments, controlling IC inputs, and switching loads.

  6. What is the maximum junction temperature of the PDTC114ET transistor?

    The maximum junction temperature is 150°C.

  7. What is the power dissipation of the PDTC114ET transistor?

    The power dissipation is 250 mW.

  8. Does the PDTC114ET transistor have a PNP complement?

    Yes, the PNP complement is the PDTA114ET transistor.

  9. How does the PDTC114ET transistor simplify circuit design?

    The transistor simplifies circuit design by reducing the need for external resistors due to its built-in bias resistors.

  10. What are the benefits of using the PDTC114ET transistor in terms of component count and costs?

    The transistor reduces component count and pick-and-place costs, making it a cost-effective solution.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:230 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
0 Remaining View Similar

In Stock

-
439

Please send RFQ , we will respond immediately.

Same Series
DD62M3200T20/AA
DD62M3200T20/AA
CONN D-SUB HD PLUG 62P VERT SLDR
DD15S200ES
DD15S200ES
CONN D-SUB HD RCPT 15P SLDR CUP
DD15S200E3S/AA
DD15S200E3S/AA
CONN D-SUB HD RCPT 15P SLDR CUP
DD26M20HT20/AA
DD26M20HT20/AA
CONN D-SUB HD PLUG 26P SLDR CUP
CBC46W4S100E20/AA
CBC46W4S100E20/AA
CONN D-SUB RCPT 46POS CRIMP
CBC47W1S100V50
CBC47W1S100V50
CONN D-SUB RCPT 47POS CRIMP
DD26S200E30
DD26S200E30
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S200V50/AA
DD26S200V50/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S2S50V30/AA
DD26S2S50V30/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD26S20WE20/AA
DD26S20WE20/AA
CONN D-SUB HD RCPT 26P SLDR CUP
DD44S32S60V3X/AA
DD44S32S60V3X/AA
CONN D-SUB HD RCPT 44P VERT SLDR
DD26S20L0X
DD26S20L0X
CONN D-SUB HD RCPT 26P SLDR CUP

Similar Products

Part Number PDTC114ET/DG/B4,21 PDTC114ET/DG/B2,21
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA
Frequency - Transition 230 MHz 230 MHz
Power - Max 250 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

Related Product By Categories

SMMUN2216LT1G
SMMUN2216LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
MUN5114T1G
MUN5114T1G
onsemi
TRANS PREBIAS PNP 50V SC70-3
PDTA123JTVL
PDTA123JTVL
Nexperia USA Inc.
TRANS PREBIAS PNP 250MW TO236AB
MUN5212T1G
MUN5212T1G
onsemi
TRANS PREBIAS NPN 50V SC70-3
PDTA114YUF
PDTA114YUF
Nexperia USA Inc.
PDTA114YU/SOT323/SC-70
MMUN2111LT1G
MMUN2111LT1G
onsemi
TRANS PREBIAS PNP 50V SOT23-3
MUN5211T1G
MUN5211T1G
onsemi
TRANS PREBIAS NPN 50V SC70-3
DTC143EET1G
DTC143EET1G
onsemi
TRANS PREBIAS NPN 50V 100MA SC75
MUN5135T1G
MUN5135T1G
onsemi
TRANS PREBIAS PNP 50V SC70-3
PDTC114YTVL
PDTC114YTVL
Nexperia USA Inc.
PDTC114YT/SOT23/TO-236AB
PDTC114EK,135
PDTC114EK,135
NXP USA Inc.
TRANS PREBIAS NPN 250MW SMT3
PDTC115EEF,115
PDTC115EEF,115
NXP USA Inc.
TRANS PREBIAS NPN 250MW SC89

Related Product By Brand

PMEG6020EPA,115
PMEG6020EPA,115
Nexperia USA Inc.
DIODE SCHOTTKY 60V 2A 3HUSON
PEMH11,315
PEMH11,315
Nexperia USA Inc.
TRANS PREBIAS 2NPN 50V SOT666
BCP56-10,115
BCP56-10,115
Nexperia USA Inc.
TRANS NPN 80V 1A SOT223
BC857BMB,315
BC857BMB,315
Nexperia USA Inc.
TRANSISTOR PNP 45V 100MA SOT883
BCX54-16TF
BCX54-16TF
Nexperia USA Inc.
TRANS NPN 45V 1A SOT89
PDTA124EU,135
PDTA124EU,135
Nexperia USA Inc.
NEXPERIA PDTA124EU - SMALL SIGNA
PMZ600UNEYL
PMZ600UNEYL
Nexperia USA Inc.
MOSFET N-CH 20V 600MA DFN1006-3
HEF4066BT,652
HEF4066BT,652
Nexperia USA Inc.
IC SWITCH QUAD 1X1 14SOIC
74ABT16245BDGG,112
74ABT16245BDGG,112
Nexperia USA Inc.
IC TXRX NON-INVERT 5.5V 48TSSOP
74LVCH8T245BQ118
74LVCH8T245BQ118
Nexperia USA Inc.
IC TRANSLATR TXRX 5.5V 24DHVQFN
74LVC1G11GW,125
74LVC1G11GW,125
Nexperia USA Inc.
IC GATE AND 1CH 3-INP 6TSSOP
74AHC373PW,118
74AHC373PW,118
Nexperia USA Inc.
IC OCTAL D TRANSP LATCH 20TSSOP