PDTC114ET/DG/B2,21
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Nexperia USA Inc. PDTC114ET/DG/B2,21

Manufacturer No:
PDTC114ET/DG/B2,21
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS RET TO-236AB
Delivery:
Payment:
iso14001
iso45001
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Product Introduction

Overview

The PDTC114ET/DG/B2,21 is an NPN Resistor-Equipped Transistor (RET) produced by Nexperia USA Inc. This component is part of the PDTC114E series and is packaged in a small SOT23 Surface-Mounted Device (SMD) plastic package. It is designed to simplify circuit design and reduce component count, making it a cost-effective solution for various digital applications.

Key Specifications

Parameter Value Unit
Type Number PDTC114ET -
Package SOT23 (TO-236AB) -
Transistor Polarity NPN -
Maximum DC Collector Current 100 mA
Peak DC Collector Current 100 mA
Collector-Emitter Voltage (VCEO Max) 50 V
Emitter-Base Voltage (VEBO) 10 V
Power Dissipation (Pd) 250 mW
Maximum Operating Temperature 150 °C
Minimum Operating Temperature -65 °C
Typical Input Resistor (R1) 10
Typical Resistor (R2) 10
Thermal Resistance (Rth(j-a)) 500 K/W
AEC-Q101 Qualified Yes -

Key Features

  • 100 mA output current capability
  • Built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ)
  • Simplifies circuit design by reducing the need for external resistors
  • Reduces component count and pick and place costs
  • AEC-Q101 qualified, ensuring reliability in automotive and industrial applications
  • Cost-saving alternative for BC847 series in digital applications

Applications

  • Digital applications in automotive and industrial segments
  • Controlling IC inputs
  • Switching loads in various electronic circuits
  • General-purpose switching and amplification in electronic devices

Q & A

  1. What is the maximum DC collector current of the PDTC114ET?

    The maximum DC collector current is 100 mA.

  2. What is the collector-emitter voltage (VCEO) of the PDTC114ET?

    The collector-emitter voltage (VCEO) is 50 V.

  3. What type of package does the PDTC114ET come in?

    The PDTC114ET comes in a SOT23 (TO-236AB) package.

  4. Is the PDTC114ET AEC-Q101 qualified?

    Yes, the PDTC114ET is AEC-Q101 qualified.

  5. What are the typical values of the built-in bias resistors?

    The typical values of the built-in bias resistors are R1 = 10 kΩ and R2 = 10 kΩ.

  6. What is the power dissipation (Pd) of the PDTC114ET?

    The power dissipation (Pd) is 250 mW.

  7. What is the maximum operating temperature of the PDTC114ET?

    The maximum operating temperature is 150°C.

  8. What is the minimum operating temperature of the PDTC114ET?

    The minimum operating temperature is -65°C.

  9. What are some common applications of the PDTC114ET?

    Common applications include digital applications in automotive and industrial segments, controlling IC inputs, and switching loads.

  10. How does the PDTC114ET simplify circuit design?

    The PDTC114ET simplifies circuit design by having built-in bias resistors, which reduces the need for external resistors and thus reduces component count and pick and place costs.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:230 MHz
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTC114ET/DG/B2,21 PDTC114ET/DG/B4,21
Manufacturer Nexperia USA Inc. Nexperia USA Inc.
Product Status Obsolete Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA, 5V 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 1µA 1µA
Frequency - Transition 230 MHz 230 MHz
Power - Max 250 mW 250 mW
Mounting Type Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB

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