SMMUN2111LT1G
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onsemi SMMUN2111LT1G

Manufacturer No:
SMMUN2111LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SOT23-3
Delivery:
Payment:
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Product Introduction

Overview

The SMMUN2111LT1G is a PNP Bipolar Digital Transistor (BRT) produced by onsemi. This device is part of the MMUN2111L series, designed to integrate a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The SMMUN2111LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. Additionally, it is PbFree, Halogen Free/BFR Free, and RoHS compliant.

Key Specifications

ParameterValue
PolarityPNP
Continuous Collector Current (IC)0.1 A
Collector-Emitter Voltage (VCEO)50 V
Base-Emitter Resistor (R1)10 kΩ
Base-Emitter Resistor (R2)10 kΩ
Power Dissipation (Pd)246 mW
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Package TypeSOT-23 (TO-236)
Case Outline2.90x1.30x1.00, 1.90P
MSL Type1
MSL Temp (°C)260

Key Features

  • Simplifies circuit design by integrating the transistor and bias resistors into a single device.
  • Reduces board space and component count.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
  • PbFree, Halogen Free/BFR Free, and RoHS compliant.
  • Available in S and NSV prefixes for unique site and control change requirements.

Applications

The SMMUN2111LT1G is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification and PPAP capability, it is well-suited for automotive electronics.
  • Industrial control systems: Its robust design and integrated bias network make it ideal for industrial control circuits.
  • Consumer electronics: It can be used in various consumer electronic devices where space and component count are critical.
  • General-purpose switching: Suitable for general-purpose switching applications where a compact, integrated solution is required.

Q & A

  1. What is the SMMUN2111LT1G? The SMMUN2111LT1G is a PNP Bipolar Digital Transistor (BRT) produced by onsemi, integrating a transistor and its bias resistors into a single device.
  2. What are the key benefits of using the SMMUN2111LT1G? It simplifies circuit design, reduces board space, and decreases component count.
  3. Is the SMMUN2111LT1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  4. What is the package type of the SMMUN2111LT1G? The package type is SOT-23 (TO-236).
  5. What are the operating temperature ranges for the SMMUN2111LT1G? The minimum operating temperature is -55°C, and the maximum operating temperature is +150°C.
  6. Is the SMMUN2111LT1G RoHS compliant? Yes, it is PbFree, Halogen Free/BFR Free, and RoHS compliant.
  7. What is the power dissipation of the SMMUN2111LT1G? The power dissipation (Pd) is 246 mW.
  8. What are the values of the integrated bias resistors? The base-emitter resistors (R1 and R2) are both 10 kΩ.
  9. Can the SMMUN2111LT1G be used in general-purpose switching applications? Yes, it is suitable for general-purpose switching applications where a compact, integrated solution is required.
  10. Where can I find more detailed specifications and datasheets for the SMMUN2111LT1G? Detailed specifications and datasheets can be found on the onsemi website, as well as through distributors like Arrow and Mouser.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number SMMUN2111LT1G SMMUN2114LT1G SMMUN2113LT1G SMMUN2211LT1G SMMUN2111LT3G SMMUN2116LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 47 kOhms 10 kOhms 10 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 10 kOhms 47 kOhms 47 kOhms 10 kOhms 10 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 35 @ 5mA, 10V 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - -
Power - Max 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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