SMMUN2111LT1G
  • Share:

onsemi SMMUN2111LT1G

Manufacturer No:
SMMUN2111LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The SMMUN2111LT1G is a PNP Bipolar Digital Transistor (BRT) produced by onsemi. This device is part of the MMUN2111L series, designed to integrate a single transistor with a monolithic bias network consisting of two resistors: a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The SMMUN2111LT1G is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements. Additionally, it is PbFree, Halogen Free/BFR Free, and RoHS compliant.

Key Specifications

ParameterValue
PolarityPNP
Continuous Collector Current (IC)0.1 A
Collector-Emitter Voltage (VCEO)50 V
Base-Emitter Resistor (R1)10 kΩ
Base-Emitter Resistor (R2)10 kΩ
Power Dissipation (Pd)246 mW
Minimum Operating Temperature-55°C
Maximum Operating Temperature+150°C
Package TypeSOT-23 (TO-236)
Case Outline2.90x1.30x1.00, 1.90P
MSL Type1
MSL Temp (°C)260

Key Features

  • Simplifies circuit design by integrating the transistor and bias resistors into a single device.
  • Reduces board space and component count.
  • AEC-Q101 qualified and PPAP capable, suitable for automotive and other demanding applications.
  • PbFree, Halogen Free/BFR Free, and RoHS compliant.
  • Available in S and NSV prefixes for unique site and control change requirements.

Applications

The SMMUN2111LT1G is versatile and can be used in a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification and PPAP capability, it is well-suited for automotive electronics.
  • Industrial control systems: Its robust design and integrated bias network make it ideal for industrial control circuits.
  • Consumer electronics: It can be used in various consumer electronic devices where space and component count are critical.
  • General-purpose switching: Suitable for general-purpose switching applications where a compact, integrated solution is required.

Q & A

  1. What is the SMMUN2111LT1G? The SMMUN2111LT1G is a PNP Bipolar Digital Transistor (BRT) produced by onsemi, integrating a transistor and its bias resistors into a single device.
  2. What are the key benefits of using the SMMUN2111LT1G? It simplifies circuit design, reduces board space, and decreases component count.
  3. Is the SMMUN2111LT1G suitable for automotive applications? Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other demanding applications.
  4. What is the package type of the SMMUN2111LT1G? The package type is SOT-23 (TO-236).
  5. What are the operating temperature ranges for the SMMUN2111LT1G? The minimum operating temperature is -55°C, and the maximum operating temperature is +150°C.
  6. Is the SMMUN2111LT1G RoHS compliant? Yes, it is PbFree, Halogen Free/BFR Free, and RoHS compliant.
  7. What is the power dissipation of the SMMUN2111LT1G? The power dissipation (Pd) is 246 mW.
  8. What are the values of the integrated bias resistors? The base-emitter resistors (R1 and R2) are both 10 kΩ.
  9. Can the SMMUN2111LT1G be used in general-purpose switching applications? Yes, it is suitable for general-purpose switching applications where a compact, integrated solution is required.
  10. Where can I find more detailed specifications and datasheets for the SMMUN2111LT1G? Detailed specifications and datasheets can be found on the onsemi website, as well as through distributors like Arrow and Mouser.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
0 Remaining View Similar

In Stock

$0.33
2,656

Please send RFQ , we will respond immediately.

Same Series
MMUN2111LT3G
MMUN2111LT3G
TRANS PREBIAS PNP 50V SOT23-3
MUN5111T1G
MUN5111T1G
TRANS PREBIAS PNP 50V SC70-3
DTA114EM3T5G
DTA114EM3T5G
TRANS PREBIAS PNP 50V SOT723
SMUN2111T1G
SMUN2111T1G
TRANS PREBIAS PNP 50V 100MA SC59
DTA114EET1G
DTA114EET1G
TRANS PREBIAS PNP 50V 100MA SC75
MUN2111T1G
MUN2111T1G
TRANS PREBIAS PNP 50V 100MA SC59
SMUN5111T1G
SMUN5111T1G
TRANS PREBIAS PNP 50V SC70-3
NSVDTA114EET1G
NSVDTA114EET1G
TRANS PREBIAS PNP 50V 100MA SC75
SMUN2111T3G
SMUN2111T3G
TRANS PREBIAS PNP 230MW SC59
SMMUN2111LT3G
SMMUN2111LT3G
TRANS PREBIAS PNP 50V SOT23-3
NSBA114EF3T5G
NSBA114EF3T5G
TRANS PREBIAS PNP 50V SOT1123
MUN2111T3G
MUN2111T3G
TRANS PREBIAS PNP 230MW SC59

Similar Products

Part Number SMMUN2111LT1G SMMUN2114LT1G SMMUN2113LT1G SMMUN2211LT1G SMMUN2111LT3G SMMUN2116LT1G
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 47 kOhms 10 kOhms 10 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 10 kOhms 47 kOhms 47 kOhms 10 kOhms 10 kOhms -
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 35 @ 5mA, 10V 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - -
Power - Max 246 mW 246 mW 246 mW 246 mW 246 mW 246 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

Related Product By Categories

PDTC143ZT,235
PDTC143ZT,235
Nexperia USA Inc.
TRANS PREBIAS NPN 250MW TO236AB
PDTC114YT,215
PDTC114YT,215
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
MUN2212T1G
MUN2212T1G
onsemi
TRANS PREBIAS NPN 50V 100MA SC59
PDTC114EK,115
PDTC114EK,115
NXP USA Inc.
NEXPERIA PDTC114E - NPN RESISTOR
NSVMMUN2132LT1G-M01
NSVMMUN2132LT1G-M01
onsemi
MMUN2132L - NSVMMUN2132 - DIGITA
MMUN2116LT1G
MMUN2116LT1G
onsemi
TRANS PREBIAS PNP 50V SOT23-3
SDTC114YET1G
SDTC114YET1G
onsemi
TRANS PREBIAS NPN 50V 100MA SC75
PDTC123YU,115
PDTC123YU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 200MW SOT323
PDTC114YUF
PDTC114YUF
Nexperia USA Inc.
TRANS PREBIAS NPNV 100MA SOT323
PDTC114YE,135
PDTC114YE,135
NXP USA Inc.
TRANS PREBIAS NPN 150MW SC75
PDTA114YU/ZLX
PDTA114YU/ZLX
Nexperia USA Inc.
PDTA114YU/ZLX
PDTD123YT/APGVL
PDTD123YT/APGVL
Nexperia USA Inc.
PDTD123YT/APGVL

Related Product By Brand

1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
FDMS86200
FDMS86200
onsemi
MOSFET N-CH 150V 9.6A/35A 8PQFN
2SK4177-DL-1E
2SK4177-DL-1E
onsemi
MOSFET N-CH 1500V 2A TO263-2
NVMFS5C410NLWFT3G
NVMFS5C410NLWFT3G
onsemi
MOSFET N-CH 40V 48A/315A 5DFN
PCA9654EDTR2G
PCA9654EDTR2G
onsemi
IC I/O EXPANDER 8BIT I2C 16TSSOP
MC74VHC1GT08EDFT2G
MC74VHC1GT08EDFT2G
onsemi
IC GATE AND 1CH 2-INP SC88A
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
NLSV2T244DR2G
NLSV2T244DR2G
onsemi
IC TRNSLTR UNIDIRECTIONAL 8SOIC
MC33064SN-5T1
MC33064SN-5T1
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
UC2844D
UC2844D
onsemi
CURRENT MODE PWM CONTROLLER
LM337TG
LM337TG
onsemi
IC REG LIN NEG ADJ 1.5A TO220
LM317MBDT
LM317MBDT
onsemi
IC REG LINEAR POS ADJ 500MA DPAK