PDTC124EU,135
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Nexperia USA Inc. PDTC124EU,135

Manufacturer No:
PDTC124EU,135
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 200MW SOT323
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTC124EU,135 is a pre-biased NPN bipolar transistor manufactured by Nexperia USA Inc. This transistor is designed with integrated bias resistors, making it a convenient and space-efficient solution for various electronic circuits. It is packaged in a small SOT-323 (SC-70) surface-mount package, which is ideal for compact and high-density designs.

The device is characterized by its high collector-emitter voltage (VCEO) of 50 V and a continuous collector current (IC) of 100 mA, making it suitable for a range of applications requiring moderate power handling. The transistor also features a high frequency response, with a typical transition frequency (fT) of 230 MHz, which is beneficial for high-frequency applications.

Key Specifications

Parameter Min Typ Max Unit
Collector-Base Voltage (VCBO) - - 50 V
Collector-Emitter Voltage (VCEO) - - 50 V
Emitter-Base Voltage (VEBO) - - 10 V
Input Voltage (VI) -10 - 40 V
Output Current (IO) - - 100 mA
Total Power Dissipation (Ptot) - - 200 mW
Junction Temperature (Tj) - - 150 °C
Ambient Temperature (Tamb) -65 - 150 °C
Transition Frequency (fT) - - 230 MHz
Package Type - - SOT-323 (SC-70) -

Key Features

  • Pre-biased NPN Transistor: Integrated bias resistors (R1 = 22 kΩ, R2 = 22 kΩ) simplify circuit design and reduce component count.
  • High Voltage Handling: Collector-emitter voltage (VCEO) of 50 V and emitter-base voltage (VEBO) of 10 V.
  • Compact Package: SOT-323 (SC-70) surface-mount package for high-density designs.
  • High Frequency Response: Transition frequency (fT) of 230 MHz, suitable for high-frequency applications.
  • Low Power Consumption: Total power dissipation (Ptot) of 200 mW.

Applications

  • General Purpose Amplification: Suitable for a variety of amplification tasks in electronic circuits.
  • Switching Circuits: Can be used in switching applications due to its moderate current handling and high voltage ratings.
  • High-Frequency Circuits: Applicable in high-frequency circuits such as RF amplifiers and oscillators.
  • Automotive and Industrial Electronics: Can be used in automotive and industrial control systems where reliability and compactness are crucial.

Q & A

  1. What is the collector-emitter voltage (VCEO) of the PDTC124EU,135 transistor?

    The collector-emitter voltage (VCEO) is 50 V.

  2. What is the continuous collector current (IC) of the PDTC124EU,135 transistor?

    The continuous collector current (IC) is 100 mA.

  3. What is the package type of the PDTC124EU,135 transistor?

    The package type is SOT-323 (SC-70).

  4. What are the values of the integrated bias resistors in the PDTC124EU,135 transistor?

    The integrated bias resistors are R1 = 22 kΩ and R2 = 22 kΩ.

  5. What is the transition frequency (fT) of the PDTC124EU,135 transistor?

    The transition frequency (fT) is 230 MHz.

  6. What is the total power dissipation (Ptot) of the PDTC124EU,135 transistor?

    The total power dissipation (Ptot) is 200 mW.

  7. What is the junction temperature (Tj) range of the PDTC124EU,135 transistor?

    The junction temperature (Tj) range is from -65°C to 150°C.

  8. What are some common applications of the PDTC124EU,135 transistor?

    General purpose amplification, switching circuits, high-frequency circuits, and automotive and industrial electronics.

  9. How does the PDTC124EU,135 transistor simplify circuit design?

    It simplifies circuit design by integrating bias resistors, reducing the need for external components.

  10. What is the significance of the SOT-323 package for the PDTC124EU,135 transistor?

    The SOT-323 package is compact and suitable for high-density designs, making it ideal for space-constrained applications.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):22 kOhms
Resistor - Emitter Base (R2):22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:150mV @ 500µA, 10mA
Current - Collector Cutoff (Max):100nA
Frequency - Transition:230 MHz
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-70, SOT-323
Supplier Device Package:SOT-323
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Similar Products

Part Number PDTC124EU,135 PDTC144EU,135 PDTC114EU,135 PDTC124EU,115
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active Active
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 22 kOhms 47 kOhms 10 kOhms 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms 47 kOhms 10 kOhms 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 5V 80 @ 5mA, 5V 30 @ 5mA, 5V 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA 1µA 1µA 100nA
Frequency - Transition 230 MHz - - 230 MHz
Power - Max 200 mW 200 mW 200 mW 200 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323 SC-70, SOT-323
Supplier Device Package SOT-323 SOT-323 SOT-323 SOT-323

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