PDTC114YEF,115
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NXP USA Inc. PDTC114YEF,115

Manufacturer No:
PDTC114YEF,115
Manufacturer:
NXP USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 250MW SC89
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTC114YEF,115 is a single, pre-biased NPN bipolar transistor produced by NXP USA Inc. Although this component is currently obsolete and no longer manufactured, it was designed for various electronic applications requiring a compact and efficient transistor solution. The transistor is packaged in a small SC89 surface-mounted device (SMD) plastic package, making it suitable for space-constrained designs.

Key Specifications

ParameterValue
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Package TypeSC89
Power Dissipation (Ptot)250 mW
Junction Temperature (Tj) (Max)150°C

Key Features

  • Pre-biased Configuration: The transistor comes with built-in bias resistors, simplifying circuit design and reducing the component count.
  • Compact Packaging: The SC89 package is small, making it ideal for applications where space is limited.
  • Low Power Consumption: With a power dissipation of 250 mW, it is suitable for low-power applications.
  • High Reliability: Designed to operate up to a junction temperature of 150°C, ensuring reliability in various environmental conditions.

Applications

The PDTC114YEF,115 transistor was designed for use in digital applications, particularly in automotive and industrial segments. It is suitable for controlling IC inputs and switching loads. Additionally, it can serve as a cost-saving alternative to other transistor series like the BC847/857 in digital applications.

Q & A

  1. What is the transistor type of the PDTC114YEF,115?
    The PDTC114YEF,115 is an NPN pre-biased bipolar transistor.
  2. What is the maximum collector current of the PDTC114YEF,115?
    The maximum collector current is 100 mA.
  3. What is the package type of the PDTC114YEF,115?
    The package type is SC89.
  4. What is the maximum power dissipation of the PDTC114YEF,115?
    The maximum power dissipation is 250 mW.
  5. What is the maximum junction temperature of the PDTC114YEF,115?
    The maximum junction temperature is 150°C.
  6. Is the PDTC114YEF,115 still in production?
    No, the PDTC114YEF,115 is obsolete and no longer manufactured.
  7. What are the typical applications of the PDTC114YEF,115?
    It is used in digital applications, particularly in automotive and industrial segments.
  8. What are the benefits of the built-in bias resistors in the PDTC114YEF,115?
    The built-in bias resistors simplify circuit design and reduce the component count.
  9. Can the PDTC114YEF,115 be used as a replacement for other transistor series?
    Yes, it can serve as a cost-saving alternative to other transistor series like the BC847/857 in digital applications.
  10. What is the significance of the SC89 package?
    The SC89 package is compact, making it ideal for space-constrained designs.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:SC-89, SOT-490
Supplier Device Package:SC-89
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Similar Products

Part Number PDTC114YEF,115 PDTC114TEF,115 PDTC114YE,115
Manufacturer NXP USA Inc. NXP USA Inc. NXP USA Inc.
Product Status Obsolete Obsolete Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 47 kOhms - 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 5mA, 5V 200 @ 1mA, 5V 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max) 1µA 1µA 1µA
Frequency - Transition - - -
Power - Max 250 mW 150 mW 150 mW
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case SC-89, SOT-490 SC-89, SOT-490 SC-75, SOT-416
Supplier Device Package SC-89 SC-89 SC-75

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