PDTC114YTVL
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Nexperia USA Inc. PDTC114YTVL

Manufacturer No:
PDTC114YTVL
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
PDTC114YT/SOT23/TO-236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Introduction

Overview

The PDTC114ET,215 is a part of the PDTC series of general-purpose NPN resistor-equipped transistors manufactured by Nexperia. This transistor is designed to simplify circuit design and reduce component count, making it an efficient choice for various digital applications. It is available in the SOT-23 (SC-59, TO-236) package and is surface-mountable.

The PDTC114ET series, including the PDTC114YTVL, is known for its built-in bias resistors, which streamline the design process and reduce the need for additional components. This feature, along with its compact package, makes it ideal for use in automotive and industrial segments.

Key Specifications

Parameter Value Unit
Package Style SOT-23 (SC-59, TO-236)
Mounting Method Surface Mount
Collector-Base Voltage (VCBO) 50 V
Collector-Emitter Voltage (VCEO) 50 V
Emitter-Base Voltage (VEBO) 10 V
Output Current (IO) 100 mA
Total Power Dissipation (Ptot) 250 mW
Junction Temperature (Tj) 150 °C
Ambient Temperature (Tamb) -65 to 150 °C
Storage Temperature (Tstg) -65 to 150 °C
Bias Resistors (R1, R2) 10 kΩ, 10 kΩ

Key Features

  • 100 mA output current capability
  • Built-in bias resistors (R1 = 10 kΩ, R2 = 10 kΩ)
  • Simplifies circuit design
  • Reduces component count
  • Reduces pick and place costs
  • AEC-Q101 qualified for automotive applications

Applications

  • Digital applications in automotive and industrial segments
  • Cost-saving alternative for BC847/857 series in digital applications
  • Control of IC inputs
  • Switching loads

Q & A

  1. What is the package style of the PDTC114ET,215 transistor?

    The PDTC114ET,215 transistor is available in the SOT-23 (SC-59, TO-236) package.

  2. What is the maximum output current of the PDTC114ET,215 transistor?

    The maximum output current is 100 mA.

  3. What are the values of the built-in bias resistors?

    The built-in bias resistors are R1 = 10 kΩ and R2 = 10 kΩ.

  4. What are the key benefits of using the PDTC114ET,215 transistor?

    The key benefits include simplifying circuit design, reducing component count, and reducing pick and place costs.

  5. Is the PDTC114ET,215 transistor AEC-Q101 qualified?
  6. What are the typical applications of the PDTC114ET,215 transistor?

    The typical applications include digital applications in automotive and industrial segments, controlling IC inputs, and switching loads.

  7. What is the maximum junction temperature of the PDTC114ET,215 transistor?

    The maximum junction temperature is 150°C.

  8. What is the total power dissipation of the PDTC114ET,215 transistor?

    The total power dissipation is 250 mW.

  9. Is the PDTC114ET,215 transistor RoHS compliant?
  10. What is the storage temperature range for the PDTC114ET,215 transistor?

    The storage temperature range is -65°C to 150°C.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):- 
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):1µA
Frequency - Transition:230 MHz
Power - Max:- 
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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