MUN2212T1G
  • Share:

onsemi MUN2212T1G

Manufacturer No:
MUN2212T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V 100MA SC59
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN2212T1G is a digital transistor from onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistor bias networks, thereby reducing both system cost and board space. The MUN2212T1G is part of a series of Bias Resistor Transistors (BRT) that are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Input Voltage (off) Vi(off) - 1.2 0.8 Vdc
Input Voltage (on) Vi(on) 2.5 1.6 - Vdc
Output Voltage (on) VOL - - 0.2 Vdc
Output Voltage (off) VOH 4.9 - - Vdc
Input Resistor R1 15.4 22 28.6
Resistor Ratio R1/R2 0.8 1.0 1.2 -
Total Device Dissipation (TA = 25°C) PD 230 - - mW
Thermal Resistance, Junction to Ambient RθJA 540 - - °C/W
Junction and Storage Temperature Range TJ, Tstg -55 to +150 - - °C

Key Features

  • Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
  • Reduces Board Space: Compact package options such as SC-59, SOT-23, and others help in minimizing board space.
  • Reduces Component Count: By integrating the bias resistor network into the transistor, it reduces the overall component count in the circuit.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Ensures environmental compliance and safety.

Applications

  • Automotive Systems: Ideal for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Consumer Electronics: Suitable for various consumer electronic devices where space and component count are critical.
  • Industrial Control Systems: Can be used in industrial control circuits where reliability and compact design are essential.
  • General Purpose Switching: Applicable in general-purpose switching applications where a simple and reliable transistor is required.

Q & A

  1. What is the MUN2212T1G used for?

    The MUN2212T1G is a digital transistor used to replace a single device and its external resistor bias network, simplifying circuit design and reducing board space.

  2. What are the key features of the MUN2212T1G?

    Key features include simplified circuit design, reduced board space, reduced component count, AEC-Q101 qualification, and environmental compliance.

  3. What are the typical input and output voltages for the MUN2212T1G?

    The typical input voltage (on) is 1.6 V, and the typical output voltage (on) is 0.2 V.

  4. What is the thermal resistance of the MUN2212T1G?

    The thermal resistance (junction to ambient) is 540 °C/W.

  5. What is the junction and storage temperature range for the MUN2212T1G?

    The junction and storage temperature range is -55 to +150 °C.

  6. Is the MUN2212T1G RoHS compliant?

    Yes, the MUN2212T1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  7. What package options are available for the MUN2212T1G?

    Available package options include SC-59, SOT-23, and others.

  8. What is the maximum total device dissipation at 25°C?

    The maximum total device dissipation at 25°C is 230 mW.

  9. Can the MUN2212T1G be used in automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  10. How does the MUN2212T1G reduce component count?

    It integrates the bias resistor network into the transistor, reducing the need for external resistors.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):22 kOhms
Resistor - Emitter Base (R2):22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:338 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SC-59
0 Remaining View Similar

In Stock

$0.18
3,820

Please send RFQ , we will respond immediately.

Same Series
DTC124EET1G
DTC124EET1G
TRANS PREBIAS NPN 50V 100MA SC75
SMUN5212T1G
SMUN5212T1G
TRANS PREBIAS NPN 50V SC70-3
NSBC124EF3T5G
NSBC124EF3T5G
TRANS PREBIAS NPN 50V SOT1123
MUN5212T1G
MUN5212T1G
TRANS PREBIAS NPN 50V SC70-3
NSVMMUN2212LT1G
NSVMMUN2212LT1G
TRANS PREBIAS NPN 50V SOT23-3
MMUN2212LT1G
MMUN2212LT1G
TRANS PREBIAS NPN 50V SOT23-3
NSVMUN2212T1G
NSVMUN2212T1G
TRANS PREBIAS NPN 50V SC59-3
SMUN2212T1G
SMUN2212T1G
TRANS PREBIAS NPN 50V 100MA SC59
DTC124EM3T5G
DTC124EM3T5G
TRANS PREBIAS NPN 50V SOT723
SDTC124EET1G
SDTC124EET1G
TRANS PREBIAS NPN 50V 100MA SC75

Similar Products

Part Number MUN2212T1G MUN2232T1G MUN2213T1G MUN2216T1G MUN2214T1G MUN5212T1G MUN2215T1G MUN2112T1G MUN2211T1G MUN2212T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 22 kOhms 4.7 kOhms 47 kOhms 4.7 kOhms 10 kOhms 22 kOhms 10 kOhms 22 kOhms 10 kOhms 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms 4.7 kOhms 47 kOhms - 47 kOhms 2.2 kOhms - 22 kOhms 10 kOhms 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V 15 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 60 @ 5mA, 10V 160 @ 5mA, 10V 60 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - - -
Power - Max 338 mW 338 mW 338 mW 338 mW 230 mW 202 mW 338 mW 230 mW 230 mW 338 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59 SC-59 SC-59 SC-59 SC-59 SC-70-3 (SOT323) SC-59 SC-59 SC-59 SC-59

Related Product By Categories

PDTC123JT,235
PDTC123JT,235
Nexperia USA Inc.
TRANS PREBIAS NPN 50V TO236AB
DTC114EM3T5G
DTC114EM3T5G
onsemi
TRANS PREBIAS NPN 50V SOT723
MUN2233T1G
MUN2233T1G
onsemi
TRANS PREBIAS NPN 50V 100MA SC59
PDTA123JT,215
PDTA123JT,215
Nexperia USA Inc.
TRANS PREBIAS PNP 50V TO236AB
PDTA114YU,115
PDTA114YU,115
Nexperia USA Inc.
TRANS PREBIAS PNP 50V SOT323
MUN5237T1G
MUN5237T1G
onsemi
TRANS PREBIAS NPN 50V SC70-3
PDTC144WU,115
PDTC144WU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
MMUN2211LT1
MMUN2211LT1
onsemi
TRANS BRT NPN 100MA 50V SOT23
PDTC114TEF,115
PDTC114TEF,115
NXP USA Inc.
TRANS PREBIAS NPN 150MW SC89
PDTC144EU/ZLX
PDTC144EU/ZLX
Nexperia USA Inc.
PDTC144EU/ZLX
PDTC114ET/DG/B4,21
PDTC114ET/DG/B4,21
Nexperia USA Inc.
TRANS PREBIAS NPN
PDTC114ET/DG/B2,21
PDTC114ET/DG/B2,21
Nexperia USA Inc.
TRANS RET TO-236AB

Related Product By Brand

FFSH3065A
FFSH3065A
onsemi
650V 30A SIC SBD
SBC847BPDXV6T1G
SBC847BPDXV6T1G
onsemi
TRANS NPN/PNP 45V 0.1A SOT-363
2N7002LT3
2N7002LT3
onsemi
MOSFET N-CH 60V 115MA SOT23-3
FDD2572-F085
FDD2572-F085
onsemi
MOSFET N-CH 150V 4A/29A TO252AA
NLHV4052DTR2G
NLHV4052DTR2G
onsemi
IC MULTIPLEXER DP4T 16TSSOP
NCV2820MUTBG
NCV2820MUTBG
onsemi
IC AMP CLASS D MONO 8UDFN
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
NCV2904VDR2G
NCV2904VDR2G
onsemi
IC OPAMP GP 2 CIRCUIT 8SOIC
MC74HC245ADW
MC74HC245ADW
onsemi
IC BUS/TXRX NONINV OCT 20-SOIC
MC74HC04AFL1
MC74HC04AFL1
onsemi
IC INVERTER 6CH 1-INP SOEIAJ-14
NCV7720DQR2G
NCV7720DQR2G
onsemi
IC MOTOR DRVR 3.15V-5.25V 24SSOP
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP