MUN2212T1G
  • Share:

onsemi MUN2212T1G

Manufacturer No:
MUN2212T1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V 100MA SC59
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MUN2212T1G is a digital transistor from onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistor bias networks, thereby reducing both system cost and board space. The MUN2212T1G is part of a series of Bias Resistor Transistors (BRT) that are AEC-Q101 qualified and PPAP capable, making them suitable for automotive and other applications requiring unique site and control change requirements.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Input Voltage (off) Vi(off) - 1.2 0.8 Vdc
Input Voltage (on) Vi(on) 2.5 1.6 - Vdc
Output Voltage (on) VOL - - 0.2 Vdc
Output Voltage (off) VOH 4.9 - - Vdc
Input Resistor R1 15.4 22 28.6
Resistor Ratio R1/R2 0.8 1.0 1.2 -
Total Device Dissipation (TA = 25°C) PD 230 - - mW
Thermal Resistance, Junction to Ambient RθJA 540 - - °C/W
Junction and Storage Temperature Range TJ, Tstg -55 to +150 - - °C

Key Features

  • Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
  • Reduces Board Space: Compact package options such as SC-59, SOT-23, and others help in minimizing board space.
  • Reduces Component Count: By integrating the bias resistor network into the transistor, it reduces the overall component count in the circuit.
  • AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-Free, Halogen Free/BFR Free, and RoHS Compliant: Ensures environmental compliance and safety.

Applications

  • Automotive Systems: Ideal for use in automotive applications due to its AEC-Q101 qualification and PPAP capability.
  • Consumer Electronics: Suitable for various consumer electronic devices where space and component count are critical.
  • Industrial Control Systems: Can be used in industrial control circuits where reliability and compact design are essential.
  • General Purpose Switching: Applicable in general-purpose switching applications where a simple and reliable transistor is required.

Q & A

  1. What is the MUN2212T1G used for?

    The MUN2212T1G is a digital transistor used to replace a single device and its external resistor bias network, simplifying circuit design and reducing board space.

  2. What are the key features of the MUN2212T1G?

    Key features include simplified circuit design, reduced board space, reduced component count, AEC-Q101 qualification, and environmental compliance.

  3. What are the typical input and output voltages for the MUN2212T1G?

    The typical input voltage (on) is 1.6 V, and the typical output voltage (on) is 0.2 V.

  4. What is the thermal resistance of the MUN2212T1G?

    The thermal resistance (junction to ambient) is 540 °C/W.

  5. What is the junction and storage temperature range for the MUN2212T1G?

    The junction and storage temperature range is -55 to +150 °C.

  6. Is the MUN2212T1G RoHS compliant?

    Yes, the MUN2212T1G is Pb-Free, Halogen Free/BFR Free, and RoHS compliant.

  7. What package options are available for the MUN2212T1G?

    Available package options include SC-59, SOT-23, and others.

  8. What is the maximum total device dissipation at 25°C?

    The maximum total device dissipation at 25°C is 230 mW.

  9. Can the MUN2212T1G be used in automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive applications.

  10. How does the MUN2212T1G reduce component count?

    It integrates the bias resistor network into the transistor, reducing the need for external resistors.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):22 kOhms
Resistor - Emitter Base (R2):22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:338 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SC-59
0 Remaining View Similar

In Stock

$0.18
3,820

Please send RFQ , we will respond immediately.

Same Series
DTC124EET1G
DTC124EET1G
TRANS PREBIAS NPN 50V 100MA SC75
MUN2212T1G
MUN2212T1G
TRANS PREBIAS NPN 50V 100MA SC59
NSBC124EF3T5G
NSBC124EF3T5G
TRANS PREBIAS NPN 50V SOT1123
MUN5212T1G
MUN5212T1G
TRANS PREBIAS NPN 50V SC70-3
NSVMMUN2212LT1G
NSVMMUN2212LT1G
TRANS PREBIAS NPN 50V SOT23-3
MMUN2212LT1G
MMUN2212LT1G
TRANS PREBIAS NPN 50V SOT23-3
NSVMUN2212T1G
NSVMUN2212T1G
TRANS PREBIAS NPN 50V SC59-3
SMUN2212T1G
SMUN2212T1G
TRANS PREBIAS NPN 50V 100MA SC59
DTC124EM3T5G
DTC124EM3T5G
TRANS PREBIAS NPN 50V SOT723
SDTC124EET1G
SDTC124EET1G
TRANS PREBIAS NPN 50V 100MA SC75

Similar Products

Part Number MUN2212T1G MUN2232T1G MUN2213T1G MUN2216T1G MUN2214T1G MUN5212T1G MUN2215T1G MUN2112T1G MUN2211T1G MUN2212T1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Active Obsolete
Transistor Type NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V
Resistor - Base (R1) 22 kOhms 4.7 kOhms 47 kOhms 4.7 kOhms 10 kOhms 22 kOhms 10 kOhms 22 kOhms 10 kOhms 22 kOhms
Resistor - Emitter Base (R2) 22 kOhms 4.7 kOhms 47 kOhms - 47 kOhms 2.2 kOhms - 22 kOhms 10 kOhms 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 5mA, 10V 15 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 60 @ 5mA, 10V 160 @ 5mA, 10V 60 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA
Frequency - Transition - - - - - - - - - -
Power - Max 338 mW 338 mW 338 mW 338 mW 230 mW 202 mW 338 mW 230 mW 230 mW 338 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 SC-70, SOT-323 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59 SC-59 SC-59 SC-59 SC-59 SC-70-3 (SOT323) SC-59 SC-59 SC-59 SC-59

Related Product By Categories

PDTC124ET,215
PDTC124ET,215
Nexperia USA Inc.
TRANS PREBIAS NPN 250MW TO236AB
PDTC144ETVL
PDTC144ETVL
Nexperia USA Inc.
TRANS PREBIAS NPN 250MW TO236AB
PDTC143EU,115
PDTC143EU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
MUN2233T1G
MUN2233T1G
onsemi
TRANS PREBIAS NPN 50V 100MA SC59
MMUN2111LT1G
MMUN2111LT1G
onsemi
TRANS PREBIAS PNP 50V SOT23-3
DTC123JET1G
DTC123JET1G
onsemi
TRANS PREBIAS NPN 50V 100MA SC75
PDTC114EE,115-NXP
PDTC114EE,115-NXP
NXP USA Inc.
0.1A, 50V, NPN, SC-75
PDTC114EMB,315
PDTC114EMB,315
Nexperia USA Inc.
TRANS PREBIAS NPN 50V DFN1006B-3
SMMUN2134LT1G
SMMUN2134LT1G
onsemi
TRANS PREBIAS PNP 50V SOT23-3
PDTC114EE,115
PDTC114EE,115
NXP USA Inc.
TRANS PREBIAS NPN 150MW SC75
PDTC123EE,115
PDTC123EE,115
NXP USA Inc.
TRANS PREBIAS NPN 150MW SC75
PDTA114EU/MIF
PDTA114EU/MIF
Nexperia USA Inc.
RET

Related Product By Brand

NZL7V5AXV3T1G
NZL7V5AXV3T1G
onsemi
TVS DIODE 5VWM 8.8VC SC89-3
1N5333BRLG
1N5333BRLG
onsemi
DIODE ZENER 3.3V 5W AXIAL
1N5353BRL
1N5353BRL
onsemi
DIODE ZENER 16V 5W AXIAL
BC856BDW1T1G
BC856BDW1T1G
onsemi
TRANS 2PNP 65V 0.1A SC88/SC70-6
MC74HC00ADG
MC74HC00ADG
onsemi
IC GATE NAND 4CH 2-INP 14SOIC
MC33153DR2
MC33153DR2
onsemi
IC GATE DRVR LOW-SIDE 8SOIC
NCP335FCT2G
NCP335FCT2G
onsemi
IC PWR SWITCH P-CHAN 1:1 4WLCSP
LM385Z-2.5RPG
LM385Z-2.5RPG
onsemi
IC VREF SHUNT 3% TO92-3
MC78L18ABPG
MC78L18ABPG
onsemi
IC REG LINEAR 18V 100MA TO92-3
NCP584HSN12T1G
NCP584HSN12T1G
onsemi
IC REG LINEAR 1.2V 200MA SOT23-5
CS8190ENF16G
CS8190ENF16G
onsemi
IC DRIVER 16DIP
FOD817A3SD
FOD817A3SD
onsemi
OPTOISOLATOR 5KV TRANSISTOR 4SMD