Overview
The DTA143ZET1G is a digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistor bias networks, thereby reducing system cost and board space. It is part of the Bias Resistor Transistor (BRT) series, which includes devices like the MUN2133, MMUN2133L, MUN5133, and others.
Key Specifications
Characteristic | Symbol | Min | Typ | Max | Unit |
---|---|---|---|---|---|
Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
Emitter-Base Cutoff Current | IEBO | - | - | 0.18 | mAdc |
Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
DC Current Gain | hFE | 80 | 140 | - | - |
Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
Input Voltage (off) | Vi(off) | - | 0.7 | 0.5 | Vdc |
Input Voltage (on) | Vi(on) | 1.3 | 0.9 | - | Vdc |
Output Voltage (on) | VOL | - | - | 0.2 | Vdc |
Output Voltage (off) | VOH | - | - | 4.9 | Vdc |
Input Resistor R1 | - | 3.3 | 4.7 | 6.1 | kΩ |
Resistor Ratio R1/R2 | - | 0.08 | 0.1 | 0.14 | - |
Total Device Dissipation (TA = 25°C) | PD | - | - | 200 | mW |
Thermal Resistance, Junction to Ambient | RθJA | - | - | 600 | °C/W |
Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
- Reduces Board Space: Compact package options such as SC-75, SC-70/SOT-323, and SOT-723 reduce the overall footprint on the PCB.
- Reduces Component Count: By integrating the bias resistors into the transistor, it minimizes the number of components required in the circuit.
- Low Power Dissipation: Designed to operate with low power dissipation, making it suitable for energy-efficient applications.
- Wide Operating Temperature Range: Can operate over a temperature range of -55°C to 150°C, making it versatile for various environments.
Applications
- Automotive Systems: Suitable for use in automotive electronics due to its robust temperature range and low power consumption.
- Industrial Control Systems: Used in industrial control circuits where simplicity and reliability are crucial.
- Consumer Electronics: Ideal for consumer electronic devices that require compact and efficient circuit designs.
- Medical Devices: Can be used in medical devices where low power and reliable operation are essential.
Q & A
- What is the DTA143ZET1G?
The DTA143ZET1G is a digital transistor with a monolithic bias resistor network produced by onsemi.
- What are the key benefits of using the DTA143ZET1G?
It simplifies circuit design, reduces board space, and minimizes component count.
- What are the typical package options for the DTA143ZET1G?
The device is available in SC-75, SC-70/SOT-323, and SOT-723 packages.
- What is the maximum collector-emitter breakdown voltage?
The maximum collector-emitter breakdown voltage is 50 Vdc.
- What is the DC current gain of the DTA143ZET1G?
The DC current gain (hFE) is typically 140, with a minimum of 80.
- What is the input voltage range for the DTA143ZET1G?
The input voltage (on) is typically 0.9 Vdc, and the input voltage (off) is typically 0.7 Vdc.
- What is the thermal resistance of the DTA143ZET1G?
The thermal resistance (RθJA) is 600 °C/W for the SC-75 package.
- What is the operating temperature range of the DTA143ZET1G?
The device operates over a temperature range of -55°C to 150°C.
- Is the DTA143ZET1G suitable for automotive applications?
Yes, it is suitable due to its robust temperature range and low power consumption.
- Where can I find detailed specifications for the DTA143ZET1G?
Detailed specifications can be found in the datasheet available on the onsemi website.