DTA143ZET1G
  • Share:

onsemi DTA143ZET1G

Manufacturer No:
DTA143ZET1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V 100MA SC75
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The DTA143ZET1G is a digital transistor produced by onsemi, designed to integrate a single transistor with a monolithic bias resistor network. This device simplifies circuit design by eliminating the need for external resistor bias networks, thereby reducing system cost and board space. It is part of the Bias Resistor Transistor (BRT) series, which includes devices like the MUN2133, MMUN2133L, MUN5133, and others.

Key Specifications

Characteristic Symbol Min Typ Max Unit
Collector-Base Cutoff Current ICBO - - 100 nAdc
Collector-Emitter Cutoff Current ICEO - - 500 nAdc
Emitter-Base Cutoff Current IEBO - - 0.18 mAdc
Collector-Base Breakdown Voltage V(BR)CBO 50 - - Vdc
Collector-Emitter Breakdown Voltage V(BR)CEO 50 - - Vdc
DC Current Gain hFE 80 140 - -
Collector-Emitter Saturation Voltage VCE(sat) - - 0.25 Vdc
Input Voltage (off) Vi(off) - 0.7 0.5 Vdc
Input Voltage (on) Vi(on) 1.3 0.9 - Vdc
Output Voltage (on) VOL - - 0.2 Vdc
Output Voltage (off) VOH - - 4.9 Vdc
Input Resistor R1 - 3.3 4.7 6.1 kΩ
Resistor Ratio R1/R2 - 0.08 0.1 0.14 -
Total Device Dissipation (TA = 25°C) PD - - 200 mW
Thermal Resistance, Junction to Ambient RθJA - - 600 °C/W
Junction and Storage Temperature Range TJ, Tstg -55 - 150 °C

Key Features

  • Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external components.
  • Reduces Board Space: Compact package options such as SC-75, SC-70/SOT-323, and SOT-723 reduce the overall footprint on the PCB.
  • Reduces Component Count: By integrating the bias resistors into the transistor, it minimizes the number of components required in the circuit.
  • Low Power Dissipation: Designed to operate with low power dissipation, making it suitable for energy-efficient applications.
  • Wide Operating Temperature Range: Can operate over a temperature range of -55°C to 150°C, making it versatile for various environments.

Applications

  • Automotive Systems: Suitable for use in automotive electronics due to its robust temperature range and low power consumption.
  • Industrial Control Systems: Used in industrial control circuits where simplicity and reliability are crucial.
  • Consumer Electronics: Ideal for consumer electronic devices that require compact and efficient circuit designs.
  • Medical Devices: Can be used in medical devices where low power and reliable operation are essential.

Q & A

  1. What is the DTA143ZET1G?

    The DTA143ZET1G is a digital transistor with a monolithic bias resistor network produced by onsemi.

  2. What are the key benefits of using the DTA143ZET1G?

    It simplifies circuit design, reduces board space, and minimizes component count.

  3. What are the typical package options for the DTA143ZET1G?

    The device is available in SC-75, SC-70/SOT-323, and SOT-723 packages.

  4. What is the maximum collector-emitter breakdown voltage?

    The maximum collector-emitter breakdown voltage is 50 Vdc.

  5. What is the DC current gain of the DTA143ZET1G?

    The DC current gain (hFE) is typically 140, with a minimum of 80.

  6. What is the input voltage range for the DTA143ZET1G?

    The input voltage (on) is typically 0.9 Vdc, and the input voltage (off) is typically 0.7 Vdc.

  7. What is the thermal resistance of the DTA143ZET1G?

    The thermal resistance (RθJA) is 600 °C/W for the SC-75 package.

  8. What is the operating temperature range of the DTA143ZET1G?

    The device operates over a temperature range of -55°C to 150°C.

  9. Is the DTA143ZET1G suitable for automotive applications?

    Yes, it is suitable due to its robust temperature range and low power consumption.

  10. Where can I find detailed specifications for the DTA143ZET1G?

    Detailed specifications can be found in the datasheet available on the onsemi website.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:200 mW
Mounting Type:Surface Mount
Package / Case:SC-75, SOT-416
Supplier Device Package:SC-75, SOT-416
0 Remaining View Similar

In Stock

$0.19
2,449

Please send RFQ , we will respond immediately.

Same Series
NSVMMUN2133LT1G
NSVMMUN2133LT1G
TRANS PREBIAS PNP 0.246W SOT23
DTA143ZET1G
DTA143ZET1G
TRANS PREBIAS PNP 50V 100MA SC75
DTA143ZM3T5G
DTA143ZM3T5G
TRANS PREBIAS PNP 50V SOT723
SMUN5133T1G
SMUN5133T1G
TRANS PREBIAS PNP 50V SC70-3
NSBA143ZF3T5G
NSBA143ZF3T5G
TRANS PREBIAS PNP 50V SOT1123
NSVDTA143ZET1G
NSVDTA143ZET1G
TRANS PNP 50V BIPOLAR SC75-3

Similar Products

Part Number DTA143ZET1G DTA143EET1G DTA143TET1G DTA143ZET1
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms 4.7 kOhms 4.7 kOhms
Resistor - Emitter Base (R2) 47 kOhms 4.7 kOhms - 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V 15 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA
Frequency - Transition - - - -
Power - Max 200 mW 200 mW 200 mW 200 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416
Supplier Device Package SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416 SC-75, SOT-416

Related Product By Categories

PDTC114ET,215
PDTC114ET,215
Nexperia USA Inc.
TRANS PREBIAS NPN 250MW TO236AB
PDTC143EU,115
PDTC143EU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
DTA114YET1G
DTA114YET1G
onsemi
TRANS PREBIAS PNP 50V 100MA SC75
PDTA144EU,115
PDTA144EU,115
Nexperia USA Inc.
TRANS PREBIAS PNP 50V SOT323
PDTC144EU,135
PDTC144EU,135
Nexperia USA Inc.
TRANS PREBIAS NPN 200MW SOT323
MMUN2232LT1G
MMUN2232LT1G
onsemi
TRANS PREBIAS NPN 50V SOT23-3
SMUN5133T1G
SMUN5133T1G
onsemi
TRANS PREBIAS PNP 50V SC70-3
PDTC114YTVL
PDTC114YTVL
Nexperia USA Inc.
PDTC114YT/SOT23/TO-236AB
PDTC114YUF
PDTC114YUF
Nexperia USA Inc.
TRANS PREBIAS NPNV 100MA SOT323
PDTC144WU,115
PDTC144WU,115
Nexperia USA Inc.
TRANS PREBIAS NPN 50V SOT323
PDTA114YU/ZLX
PDTA114YU/ZLX
Nexperia USA Inc.
PDTA114YU/ZLX
PDTC143EU/ZLX
PDTC143EU/ZLX
Nexperia USA Inc.
PDTC143EU/ZLX

Related Product By Brand

SBAS16WT1G
SBAS16WT1G
onsemi
DIODE GEN PURP 75V 200MA SC70
SURA8210T3G
SURA8210T3G
onsemi
DIODE GEN PURP 100V 2A SMA
SMUN5313DW1T1G
SMUN5313DW1T1G
onsemi
TRANS PREBIAS 1NPN 1PNP 50V SC88
FDA28N50F
FDA28N50F
onsemi
MOSFET N-CH 500V 28A TO3PN
LM301ADR2G
LM301ADR2G
onsemi
IC OPAMP GP 1 CIRCUIT 8SOIC
MC33072ADG
MC33072ADG
onsemi
IC OPAMP JFET 2 CIRCUIT 8SOIC
NL17SZ04XV5T2G
NL17SZ04XV5T2G
onsemi
IC INVERTER 1CH 1-INP SOT553
NL27WZ08USG
NL27WZ08USG
onsemi
IC GATE AND 2CH 2-INP US8
NLV17SZU04DFT2G
NLV17SZU04DFT2G
onsemi
IC INVERTER 1CH 1-INP SC88A
NCP1623ASNT1G
NCP1623ASNT1G
onsemi
ENHANCED HIGH EFFICIENCY POWER F
NCP302HSN27T1G
NCP302HSN27T1G
onsemi
IC SUPERVISOR 1 CHANNEL 5TSOP
NCP103AMX180TCG
NCP103AMX180TCG
onsemi
IC REG LINEAR 1.8V 150MA 4UDFN