MMUN2116LT1G
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onsemi MMUN2116LT1G

Manufacturer No:
MMUN2116LT1G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMUN2116LT1G is a pre-biased bipolar transistor (BJT) produced by onsemi. This component is part of a series designed to replace a single device and its external resistor bias network, simplifying circuit design and reducing component count. It is packaged in a SOT-23 format, making it suitable for a wide range of applications where space is limited.

Key Specifications

ParameterValue
Package TypeSOT-23
PolarityPNP
Collector Current100 mA
Collector-Emitter Voltage50 V
Base-Emitter Voltage10 V
Power Dissipation246 mW
Operating Temperature Range-55°C to 150°C

Key Features

  • Pre-biased bipolar transistor, eliminating the need for external resistor bias networks.
  • Compact SOT-23 package for space-saving designs.
  • PNP polarity.
  • High collector current of up to 100 mA.
  • High collector-emitter voltage of up to 50 V.
  • Low power dissipation of 246 mW.
  • Wide operating temperature range from -55°C to 150°C.

Applications

The MMUN2116LT1G is versatile and can be used in various electronic circuits, including but not limited to:

  • Switching and amplification applications.
  • Automotive and industrial control systems.
  • Consumer electronics such as audio equipment and home appliances.
  • Medical devices requiring reliable and compact transistor solutions.

Q & A

  1. What is the package type of the MMUN2116LT1G? The MMUN2116LT1G is packaged in a SOT-23 format.
  2. What is the polarity of the MMUN2116LT1G? The MMUN2116LT1G is a PNP transistor.
  3. What is the maximum collector current of the MMUN2116LT1G? The maximum collector current is 100 mA.
  4. What is the maximum collector-emitter voltage of the MMUN2116LT1G? The maximum collector-emitter voltage is 50 V.
  5. What is the power dissipation of the MMUN2116LT1G? The power dissipation is 246 mW.
  6. What is the operating temperature range of the MMUN2116LT1G? The operating temperature range is from -55°C to 150°C.
  7. Why is the MMUN2116LT1G beneficial in circuit design? It simplifies circuit design by eliminating the need for external resistor bias networks.
  8. Where can the MMUN2116LT1G be used? It can be used in switching and amplification applications, automotive and industrial control systems, consumer electronics, and medical devices.
  9. Is the MMUN2116LT1G RoHS compliant? Yes, the MMUN2116LT1G is RoHS compliant.
  10. Where can I find the datasheet for the MMUN2116LT1G? The datasheet can be found on websites such as Mouser, Digi-Key, and LCSC.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):- 
DC Current Gain (hFE) (Min) @ Ic, Vce:160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 1mA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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In Stock

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Similar Products

Part Number MMUN2116LT1G MMUN2216LT1G MMUN2136LT1G MMUN2111LT1G MMUN2112LT1G MMUN2113LT1G MMUN2114LT1G MMUN2115LT1G MMUN2116LT1
Manufacturer onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi onsemi
Product Status Active Active Active Active Active Active Active Active Obsolete
Transistor Type PNP - Pre-Biased NPN - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased + Diode PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased -
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA 100 mA -
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V 50 V 50 V 50 V 50 V -
Resistor - Base (R1) 4.7 kOhms 4.7 kOhms 100 kOhms 10 kOhms 22 kOhms 47 kOhms 10 kOhms 10 kOhms -
Resistor - Emitter Base (R2) - - 100 kOhms 10 kOhms 22 kOhms 47 kOhms 47 kOhms - -
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 5mA, 10V 160 @ 5mA, 10V 80 @ 5mA, 10V 35 @ 5mA, 10V 60 @ 5mA, 10V 80 @ 5mA, 10V 80 @ 5mA, 10V 160 @ 5mA, 10V -
Vce Saturation (Max) @ Ib, Ic 250mV @ 1mA, 10mA 250mV @ 1mA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA -
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA 500nA 500nA 500nA 500nA -
Frequency - Transition - - - - - - - - -
Power - Max 246 mW 400 mW 246 mW 246 mW 246 mW 246 mW 246 mW 400 mW -
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount -
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 -
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) -

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