MMUN2211LT3G
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onsemi MMUN2211LT3G

Manufacturer No:
MMUN2211LT3G
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS NPN 50V SOT23-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The MMUN2211LT3G is a digital transistor from onsemi, part of their Bias Resistor Transistor (BRT) series. This device integrates a single transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The MMUN2211LT3G is particularly useful in applications requiring compact and efficient transistor solutions.

Key Specifications

CharacteristicSymbolMaxUnit
Total Device Dissipation (TA = 25°C)PD246mW
Derate above 25°C-2.0mW/°C
Thermal Resistance, Junction to AmbientRθJA508°C/W
Thermal Resistance, Junction to LeadRθJL174°C/W
Junction and Storage Temperature RangeTJ, Tstg−55 to +150°C
Input Voltage (off)Vi(off)1.2Vdc
Input Voltage (on)Vi(on)2.5Vdc
Output Voltage (on)VOL0.2Vdc
Output Voltage (off)VOH4.9Vdc
Input ResistorR17.0 to 13kΩ
Resistor RatioR1/R20.8 to 1.2-

Key Features

  • Simplifies circuit design by integrating the bias resistor network into a single device.
  • Reduces board space and component count.
  • AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other applications requiring unique site and control change requirements.
  • Pb-free packaging.
  • Available in SOT-23 package.

Applications

The MMUN2211LT3G is suitable for a variety of applications, including:

  • Automotive systems: Due to its AEC-Q101 qualification and PPAP capability, it is ideal for use in automotive electronics.
  • Industrial control systems: Its compact design and integrated bias resistors make it a good choice for space-constrained industrial control circuits.
  • Consumer electronics: It can be used in various consumer electronic devices where space efficiency and simplicity in design are crucial.
  • General-purpose switching: The device is versatile and can be used in any application requiring a digital transistor with integrated bias resistors.

Q & A

  1. What is the MMUN2211LT3G?

    The MMUN2211LT3G is a digital transistor with a monolithic bias resistor network from onsemi.

  2. What are the key benefits of using the MMUN2211LT3G?

    It simplifies circuit design, reduces board space, and decreases the component count.

  3. What package is the MMUN2211LT3G available in?

    The MMUN2211LT3G is available in the SOT-23 package.

  4. Is the MMUN2211LT3G suitable for automotive applications?

    Yes, it is AEC-Q101 qualified and PPAP capable, making it suitable for automotive and other similar applications.

  5. What is the maximum total device dissipation at 25°C?

    The maximum total device dissipation at 25°C is 246 mW.

  6. What is the thermal resistance from junction to ambient?

    The thermal resistance from junction to ambient is 508 °C/W.

  7. What is the input voltage range for the MMUN2211LT3G?

    The input voltage range is from 1.2 V (off) to 2.5 V (on).

  8. What are the typical output voltages for the MMUN2211LT3G?

    The typical output voltages are 0.2 V (on) and 4.9 V (off).

  9. Is the MMUN2211LT3G Pb-free?

    Yes, the MMUN2211LT3G is Pb-free.

  10. What is the junction and storage temperature range for the MMUN2211LT3G?

    The junction and storage temperature range is −55 to +150 °C.

Product Attributes

Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):10 kOhms
Resistor - Emitter Base (R2):10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:- 
Power - Max:246 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:SOT-23-3 (TO-236)
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Similar Products

Part Number MMUN2211LT3G MMUN2111LT3G MMUN2211LT1G MMUN2211LT3
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Active Obsolete
Transistor Type NPN - Pre-Biased PNP - Pre-Biased NPN - Pre-Biased NPN - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V 50 V
Resistor - Base (R1) 10 kOhms 10 kOhms 10 kOhms 10 kOhms
Resistor - Emitter Base (R2) 10 kOhms 10 kOhms 10 kOhms 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 5mA, 10V 35 @ 5mA, 10V 35 @ 5mA, 10V 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max) 500nA 500nA 500nA 500nA
Frequency - Transition - - - -
Power - Max 246 mW 246 mW 246 mW 246 mW
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236) SOT-23-3 (TO-236)

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