PDTA123JT,215
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Nexperia USA Inc. PDTA123JT,215

Manufacturer No:
PDTA123JT,215
Manufacturer:
Nexperia USA Inc.
Package:
Tape & Reel (TR)
Description:
TRANS PREBIAS PNP 50V TO236AB
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Introduction

Overview

The PDTA123JT,215 is a pre-biased bipolar transistor manufactured by Nexperia USA Inc. This component is part of the PDTA123J series, which includes general-purpose and low VCEsat bipolar transistors. The PDTA123JT,215 is specifically a PNP transistor, designed for surface mount applications and packaged in the SOT23 (TO-236AB) format.

Nexperia, the manufacturer, is a leading semiconductor company with a rich history tracing back to Philips Semiconductors. The company specializes in producing a wide range of semiconductor components, including bipolar transistors, diodes, MOSFETs, and logic devices, which are essential in various industries such as automotive, industrial, mobile, and consumer electronics.

Key Specifications

Type number Package version Package name Size (mm) Channel type P tot (mW) R2 (typ) (kΩ) I C [max] (mA) R1 (typ) (kΩ) V CEO (V)
PDTA123JT SOT23 SOT23 (TO-236AB) 2.9 x 1.3 x 1 PNP 250 47 100 2.2 50

Key Features

  • Pre-biased Configuration: The PDTA123JT,215 comes in a pre-biased configuration, which simplifies the design and reduces the number of external components required.
  • Low VCEsat: This transistor features a low collector-emitter saturation voltage, making it efficient for various applications.
  • Surface Mount Package: Packaged in the SOT23 format, it is suitable for surface mount technology (SMT) and offers a compact footprint.
  • High Current Capability: With a maximum collector current of 100 mA, it is suitable for applications requiring moderate current handling.
  • High Voltage Rating: The transistor has a collector-emitter voltage rating of 50 V, making it robust for a variety of applications.

Applications

  • Automotive Electronics: Suitable for use in automotive systems due to its robust specifications and reliability.
  • Industrial Control Systems: Can be used in industrial control circuits where reliability and efficiency are crucial.
  • Consumer Electronics: Applicable in various consumer electronic devices such as audio equipment, power supplies, and other general-purpose electronic circuits.
  • Communication Devices: Used in communication devices and wireless systems where compact and efficient components are required.

Q & A

  1. What is the package type of the PDTA123JT,215?

    The PDTA123JT,215 is packaged in the SOT23 (TO-236AB) format.

  2. What is the maximum collector current of the PDTA123JT,215?

    The maximum collector current is 100 mA.

  3. What is the collector-emitter voltage rating of the PDTA123JT,215?

    The collector-emitter voltage rating is 50 V.

  4. What is the typical value of R2 for the PDTA123JT,215?

    The typical value of R2 is 47 kΩ.

  5. What is the typical value of R1 for the PDTA123JT,215?

    The typical value of R1 is 2.2 kΩ.

  6. Is the PDTA123JT,215 suitable for surface mount technology?

    Yes, it is suitable for surface mount technology (SMT).

  7. What is the power dissipation (P tot) of the PDTA123JT,215?

    The power dissipation is 250 mW.

  8. What type of transistor is the PDTA123JT,215?

    The PDTA123JT,215 is a PNP bipolar transistor.

  9. Who is the manufacturer of the PDTA123JT,215?

    The manufacturer is Nexperia USA Inc.

  10. What are some common applications of the PDTA123JT,215?

    Common applications include automotive electronics, industrial control systems, consumer electronics, and communication devices.

Product Attributes

Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):2.2 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:100mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:- 
Power - Max:250 mW
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Supplier Device Package:TO-236AB
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Similar Products

Part Number PDTA123JT,215 PDTA123YT,215 PDTA123ET,215
Manufacturer Nexperia USA Inc. Nexperia USA Inc. Nexperia USA Inc.
Product Status Active Active Active
Transistor Type PNP - Pre-Biased PNP - Pre-Biased PNP - Pre-Biased
Current - Collector (Ic) (Max) 100 mA 100 mA 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V 50 V 50 V
Resistor - Base (R1) 2.2 kOhms 2.2 kOhms 2.2 kOhms
Resistor - Emitter Base (R2) 47 kOhms 10 kOhms 2.2 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 5V 35 @ 5mA, 5V 30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic 100mV @ 250µA, 5mA 150mV @ 500µA, 10mA 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max) 100nA (ICBO) 1µA 100nA (ICBO)
Frequency - Transition - - -
Power - Max 250 mW 250 mW 250 mW
Mounting Type Surface Mount Surface Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3
Supplier Device Package TO-236AB TO-236AB TO-236AB

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