Overview
The SMMUN2211LT1G is a digital transistor from onsemi, part of the MUN2211 series. This device is designed to integrate a single transistor with a monolithic bias resistor network, consisting of a series base resistor and a base-emitter resistor. This integration simplifies circuit design, reduces board space, and decreases the overall component count. The SMMUN2211LT1G is particularly useful in applications requiring compact and efficient transistor solutions.
Key Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Collector-Base Cutoff Current | ICBO | - | - | 100 | nAdc |
| Collector-Emitter Cutoff Current | ICEO | - | - | 500 | nAdc |
| Emitter-Base Cutoff Current | IEBO | - | - | 0.5 | mAdc |
| Collector-Base Breakdown Voltage | V(BR)CBO | 50 | - | - | Vdc |
| Collector-Emitter Breakdown Voltage | V(BR)CEO | 50 | - | - | Vdc |
| DC Current Gain | hFE | 35 | 60 | - | - |
| Collector-Emitter Saturation Voltage | VCE(sat) | - | - | 0.25 | Vdc |
| Input Voltage (off) | Vi(off) | - | 1.2 | 0.8 | Vdc |
| Input Voltage (on) | Vi(on) | 2.5 | 1.8 | - | Vdc |
| Input Resistor | R1 | 7.0 | 10 | 13 | kΩ |
| Resistor Ratio | R1/R2 | 0.8 | 1.0 | 1.2 | - |
| Junction and Storage Temperature Range | TJ, Tstg | -55 | - | 150 | °C |
| Total Device Dissipation (TA = 25°C) | PD | - | - | 254 | mW |
| Thermal Resistance, Junction to Ambient | RθJA | - | - | 493 | °C/W |
Key Features
- Simplifies Circuit Design: Integrates a single transistor with a monolithic bias resistor network, reducing the need for external resistors.
- Reduces Board Space: Compact package options such as SOT-23 reduce the overall footprint of the circuit.
- Reduces Component Count: By integrating the bias resistors into the transistor, the total component count is decreased.
- AEC-Q101 Qualified and PPAP Capable: Suitable for automotive and other applications requiring unique site and control change requirements.
Applications
- Automotive Systems: AEC-Q101 qualified, making it suitable for various automotive applications.
- Industrial Control Systems: Used in control circuits where compact and efficient transistor solutions are required.
- Consumer Electronics: Ideal for applications in consumer electronics where space and component count are critical.
- General Purpose Switching: Can be used in a variety of general-purpose switching applications due to its robust electrical characteristics.
Q & A
- What is the SMMUN2211LT1G used for?
The SMMUN2211LT1G is a digital transistor used to replace a single device and its external resistor bias network, simplifying circuit design and reducing board space.
- What package type does the SMMUN2211LT1G come in?
The SMMUN2211LT1G comes in a SOT-23 package.
- What is the typical DC current gain (hFE) of the SMMUN2211LT1G?
The typical DC current gain (hFE) is 60.
- What is the maximum collector-emitter saturation voltage (VCE(sat))?
The maximum collector-emitter saturation voltage (VCE(sat)) is 0.25 Vdc.
- What is the junction and storage temperature range for the SMMUN2211LT1G?
The junction and storage temperature range is -55°C to +150°C.
- Is the SMMUN2211LT1G AEC-Q101 qualified?
Yes, the SMMUN2211LT1G is AEC-Q101 qualified, making it suitable for automotive applications.
- What is the total device dissipation at TA = 25°C?
The total device dissipation at TA = 25°C is 254 mW.
- What is the thermal resistance, junction to ambient (RθJA), for the SOT-23 package?
The thermal resistance, junction to ambient (RθJA), is 493 °C/W.
- Can the SMMUN2211LT1G be used in general-purpose switching applications?
Yes, the SMMUN2211LT1G can be used in a variety of general-purpose switching applications due to its robust electrical characteristics.
- Is the SMMUN2211LT1G Pb-free?
Yes, the SMMUN2211LT1G is Pb-free, indicated by the 'G' or microdot '�' on the package.
